High-speed III-V nanowire photodetector monolithically integrated on Si.

Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal. Nanowires enable the local integration of high-quality III-V material, but advanced devices are hampered by their high-aspect ratio vertical geometry. Here, we demonstrate the in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si. Using free space coupling, photodetectors demonstrate a spectral response from 1200-1700 nm. The 60 nm thin devices, with footprints as low as ~0.06 µm2, provide an ultra-low capacitance which is key for high-speed operation. We demonstrate high-speed optical data reception with a nanostructure photodetector at 32 Gb s-1, enabled by a 3 dB bandwidth exceeding ~25 GHz. When operated as light emitting diode, the p-i-n devices emit around 1600 nm, paving the way for future fully integrated optical links.

Large Pockels effect in micro- and nanostructured barium titanate integrated on silicon.

The electro-optical Pockels effect is an essential nonlinear effect used in many applications. The ultrafast modulation of the refractive index is, for example, crucial to optical modulators in photonic circuits. Silicon has emerged as a platform for integrating such compact circuits, but a strong Pockels effect is not available on silicon platforms. Here, we demonstrate a large electro-optical response in silicon photonic devices using barium titanate. We verify the Pockels effect to be the physical origin of the response, with r42 = 923 pm V-1, by confirming key signatures of the Pockels effect in ferroelectrics: the electro-optic response exhibits a crystalline anisotropy, remains strong at high frequencies, and shows hysteresis on changing the electric field. We prove that the Pockels effect remains strong even in nanoscale devices, and show as a practical example data modulation up to 50 Gbit s-1. We foresee that our work will enable novel device concepts with an application area largely extending beyond communication technologies.

InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities.

III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), due to its high electron mobility. In the present work, we report on InGaAs FinFETs monolithically integrated on silicon substrates. The InGaAs channels are created by metal⁻organic chemical vapor deposition (MOCVD) epitaxial growth within oxide cavities, a technique referred to as template-assisted selective epitaxy (TASE), which allows for the local integration of different III-V semiconductors on silicon. FinFETs with a gate length down to 20nm are fabricated based on a CMOS-compatible replacement-metal-gate process flow. This includes self-aligned source-drain n⁺ InGaAs regrown contacts as well as 4 nm source-drain spacers for gate-contacts isolation. The InGaAs material was examined by scanning transmission electron microscopy (STEM) and the epitaxial structures showed good crystal quality. Furthermore, we demonstrate a controlled InGaAs digital etching process to create doped extensions underneath the source-drain spacer regions. We report a device with gate length of 90 nm and fin width of 40 nm showing on-current of 100 µA/µm and subthreshold slope of about 85 mV/dec.

Elucidating the Surface Reactions of an Amorphous Si Thin Film as a Model Electrode for Li-Ion Batteries.

We investigated during the first lithiation/delithiation process the electrochemical reaction mechanisms at the surface of 30 nm n-doped amorphous silicon (a-Si) thin film used as a negative model electrode for Li-ion batteries. Usage of thin film allowed us to accurately discern the different reaction mechanisms occurring at the surface by avoiding interference from carbon and binder components. The potential dependency of the evolution of the solid electrolyte interphase (SEI) and the reactions on the a-Si and on the copper current collector were elucidated by coupling galvanostatic cycling with postmortem X-ray photoemission spectroscopy and scanning electron microscopy analyses. Our approach revealed the clear reversibility of lithiation/delithiation in the a-Si and native SiO2 layers; such a reaction for SiO2 has not been previously detected and was considered to be an irreversible process. Quantitative and qualitative analyses of the potential-dependent surface evolution revealed the decomposition products of both the salt (LiPF6) and solvent (dimethyl carbonate/ethylene carbonate), giving insight into the complex SEI formation mechanism on the a-Si film but also underlining the strong influence of "inert" materials such as the role of the current collector in the irreversible charge loss. A model mechanism describing the evolutionary complexity of the a-Si surface during the first galvanostatic cycle is proposed and discussed.