ABSTRACT
Topological insulators are a class of band insulators with nontrivial topology, a result of band inversion due to the strong spin-orbit coupling. The transition between topological and normal insulator can be realized by tuning the spin-orbit coupling strength and has been observed experimentally. However, the impact of chemical disorders on the topological phase transition was not addressed in previous studies. Herein, we report a systematic scanning tunneling microscopy/spectroscopy and first-principles study of the topological phase transition in single crystals of In-doped Bi2Se3. Surprisingly, no band gap closure was observed across the transition. Furthermore, our spectroscopic-imaging results reveal that In defects are extremely effective "suppressors" of the band inversion, which leads to microscopic phase separation of topological-insulator-like and normal-insulator-like nano regions across the "transition". The observed topological electronic inhomogeneity demonstrates the significant impact of chemical disorders in topological materials, shedding new light on the fundamental understanding of topological phase transition.
ABSTRACT
Combining high resolution scanning tunneling microscopy and first principles calculations, we identified the major native defects, in particular the Se vacancies and Se interstitial defects, that are responsible for the bulk conduction and nanoscale potential fluctuations in single crystals of archetypal topological insulator Bi_{2}Se_{3}. Here it is established that the defect concentrations in Bi_{2}Se_{3} are far above the thermodynamic limit, and that the growth kinetics dominate the observed defect concentrations. Furthermore, through careful control of the synthesis, our tunneling spectroscopy suggests that our best samples are approaching the intrinsic limit with the Fermi level inside the band gap without introducing extrinsic dopants.
ABSTRACT
Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)2Se3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi2Se3.
ABSTRACT
We demonstrate a general, computer automated procedure that inverts the reciprocal space scattering data (q-space) that are measured by spectroscopic imaging scanning tunnelling microscopy (SI-STM) in order to determine the momentum space (k-space) scattering structure. This allows a detailed examination of the k-space origins of the quasiparticle interference (QPI) pattern in Bi2Sr2CaCu2O8+x within the theoretical constraints of the joint density of states (JDOS). Our new method allows measurement of the differences between the positive and negative energy dispersions, the gap structure and an energy dependent scattering length scale. Furthermore, it resolves the transition between the dispersive QPI and the checkerboard ([Formula: see text] excitation). We have measured the k-space scattering structure over a wide range of doping (p â¼ 0.22-0.08), including regions where the octet model is not applicable. Our technique allows the complete mapping of the k-space scattering origins of the spatial excitations in Bi2Sr2CaCu2O8+x, which allows for better comparisons between SI-STM and other experimental probes of the band structure. By applying our new technique to such a heavily studied compound, we can validate our new general approach for determining the k-space scattering origins from SI-STM data.
