Interplay between crystal phase purity and radial growth in InP nanowires.

The interplay between crystal phase purity and radial growth in InP nanowires is investigated. By modifying the growth rate and V/III ratio, regions of high or low stacking fault density can be controllably introduced into wurtzite nanowires. It is found that regions with high stacking fault density encourage radial growth. Through careful choice of growth conditions pure wurtzite InP nanowires are then grown which exhibit narrow 4.2 K photoluminescence linewidths of 3.7 meV at 1.490 meV, and no evidence of emission related to stacking faults or zincblende insertions.

Enhanced photonic crystal cavity-waveguide coupling using local slow-light engineering.

This Letter introduces an enhanced cavity-waveguide coupling architecture based upon slow-light engineering in a two-port photonic crystal system. After analyzing the system transmittance using coupled-mode theory, the system is probed experimentally and shown to have increased transmittance due to the enhanced cavity-waveguide coupling. Such a coupling architecture may facilitate next-generation planar lightwave circuitry such as onchip quantum information processing or high precision light-matter sensing applications.

Selective epitaxy of semiconductor nanopyramids for nanophotonics.

We present a detailed study of the parameters which affect the geometrical perfection of nanopyramids used for the site-selected nucleation of quantum dots. Through an understanding of crystal facet formation, we demonstrate that undesirable high index planes can be suppressed using carefully optimized lithography together with properly orientated source fluxes in the growth reactor. High quality InP nanopyramids are reported with individual InAs/InP quantum dots positioned with high precision. This represents an important milestone for the fabrication of complex quantum dot based nanophotonic devices.

Monolithically integrated asymmetric graded and step-index couplers for microphotonic waveguides.

A monolithically integrated asymmetric graded index (GRIN) or step-index (GRIN) mode converters for microphotonic waveguides are proposed and described. The design parameters and tolerances are calculated for amorphous silicon (a-Si) couplers integrated with silicon-on-insulator waveguides. The GRIN and step-index couplers operate over a wide wavelength range with low polarization dependence, and the lithographic resolution needed is only +/-1 microm. Finally, experimental results are presented for a single layer 3 microm thick step-index a-Si coupler integrated on a 0.8 microm thick SOI waveguide. The measured variation of coupling efficiency with coupler length is in agreement with theory, with an optimal coupling length of 15 microm for this device.

Eliminating the birefringence in silicon-on-insulator ridge waveguides by use of cladding stress.

We propose and demonstrate the use of the cladding stress-induced photoelastic effect to eliminate modal birefringence in silicon-on-insulator (SOI) ridge waveguides. Birefringence-free operation was achieved for waveguides with otherwise large birefringence by use of properly chosen thickness and stress of the upper cladding layer. With the stress levels typically found in cladding materials such as SiO2, the birefringence modification range can be as large as 10(-3). In arrayed waveguide grating demultiplexers that were fabricated in a SOI platform, we demonstrated the reduction of the birefringence from 1.2 x 10(-3) (without the upper cladding) to 4.5 x 10(-5) when a 0.8-microm oxide upper cladding with a stress of -320 MPa (compressive) was used. Because the index changes induced by the stress are orders of magnitude smaller than the waveguide core-cladding index contrast, the associated mode mismatch loss is negligible.