ABSTRACT
We report here experimental results of perturbative nonlinear optical wave-mixing processes in the extreme ultraviolet region by using two-color and three-color laser fields. Besides the usual odd-harmonic spectrum of high harmonic generation, new spectral components are observed when multiple incommensurate lasers (one driving plus one or two control field) interact with neutral krypton gas. To demonstrate the wave-mixing process underlying such an observation, we first couple the driving field with either the signal or the idler field of an optical parametric amplifier in the gaseous ensemble to generate certain mixing frequencies. The two control fields are then simultaneously combined with the driving field to produce broad and distinguishable mixing peaks that clearly reveal the contribution of each control laser. Finally, the variation of the intensity of the mixing waves with the intensity of each control field, the gas density, and the relative focus position is examined for signatures of phase-matched generation of the mixing fields in this spectral region.
ABSTRACT
We report the generation of highly coherent extreme ultraviolet sources with wavelengths around 30 and 10 nm by phase-matched high-order harmonic generation (HHG) in a gas cell filled with argon and helium, respectively. We then perform coherent diffractive imaging (CDI) by using a focused narrow-bandwidth HHG source with wavelength around 30 nm as an illumination beam for two kinds of samples. The first is a transmission sample and the second is a absorption sample. In addition, we report the successful reconstruction of a complex absorption sample using a tabletop high-harmonic source. This will open the path to the realization of a compact soft x-ray microscope to investigate biological samples such as membrane proteins.
ABSTRACT
Transient grating spectroscopy detects directly the relaxation of the excited carriers rather than time-resolved photoluminescence and thus it is particularly desired for the indirect semiconductors such as silicon quantum dots. We investigate ultrafast carrier dynamics in silicon quantum dots embedded in silicon oxide matrix using femtosecond transient grating spectroscopy. Two ultrafast decay components are observed with decay time of 800 fs and 4 ps at various detection wavelengths, which are attributed to the transverse optical and transverse acoustic phonon assisted relaxation. Photoexcited electrons and holes are effectively trapped into the localized states on the surface of the silicon quantum dots where electrons and holes have a slow recombination in the time scale of microseconds.