Near Infrared Light-Emitting Diodes Based on Colloidal InAs/ZnSe Core/Thick-Shell Quantum Dots.

Heavy-metal-free III-V colloidal quantum dots (QDs) exhibit promising attributes for application in optoelectronics. Among them, InAs QDs are demonstrating excellent optical performance with respect to absorption and emission in the near-infrared spectral domain. Recently, InAs QDs attained a substantial improvement in photoluminescence quantum yield, achieving 70% at a wavelength of 900 nm through the strategic overgrowth of a thick ZnSe shell atop the InAs core. In the present study, light-emitting diodes (LEDs) based on this type of InAs/ZnSe QDs are fabricated, reaching an external quantum efficiency (EQE) of 13.3%, a turn-on voltage of 1.5V, and a maximum radiance of 12 Wsr-1m-2. Importantly, the LEDs exhibit an extensive emission dynamic range, characterized by a nearly linear correlation between emission intensity and current density, which can be attributed to the efficient passivation provided by the thick ZnSe shell. The obtained results are comparable to state-of-the-art PbS QD LEDs. Furthermore, it should be stressed not only that the fabricated LEDs are fully RoHS-compliant but also that the emitting InAs QDs are prepared via a synthetic route based on a non-pyrophoric, cheap, and commercially available as precursor, namely tris(dimethylamino)-arsine.

Partial Ligand Stripping from CsPbBr3 Nanocrystals Improves Their Performance in Light-Emitting Diodes.

Halide perovskite nanocrystals (NCs), specifically CsPbBr3, have attracted considerable interest due to their remarkable optical properties for optoelectronic devices. To achieve high-efficiency light-emitting diodes (LEDs) based on CsPbBr3 nanocrystals (NCs), it is crucial to optimize both their photoluminescence quantum yield (PLQY) and carrier transport properties when they are deposited to form films on substrates. While the exchange of native ligands with didodecyl dimethylammonium bromide (DDAB) ligand pairs has been successful in boosting their PLQY, dense DDAB coverage on the surface of NCs should impede carrier transport and limit device efficiency. Following our previous work, here, we use oleyl phosphonic acid (OLPA) as a selective stripping agent to remove a fraction of DDAB from the NC surface and demonstrate that such stripping enhances carrier transport while maintaining a high PLQY. Through systematic optimization of OLPA dosage, we significantly improve the performance of CsPbBr3 LEDs, achieving a maximum external quantum efficiency (EQE) of 15.1% at 516 nm and a maximum brightness of 5931 cd m-2. These findings underscore the potential of controlled ligand stripping to enhance the performance of CsPbBr3 NC-based optoelectronic devices.

High Quality Factor in Solution-Processed Inorganic Microcavities Embedding CsPbBr3 Perovskite Nanocrystals.

Optical microcavities grant manipulation over light-matter interactions and light propagation, enabling the fabrication of foundational optical and optoelectronic components. However, the materials used for high-performing systems, mostly bulk inorganics, are typically costly, and their processing is hardly scalable. In this work, we present an alternative way to fabricate planar optical resonators via solely solution processing while approaching the performances of conventional systems. Here, we couple fully solution-processed high dielectric contrast inorganic Bragg mirrors obtained by sol-gel deposition with the remarkable photoluminescence properties of CsPbBr3 perovskite nanocrystals. The approach yields microcavities with a quality factor of ∼220, which is a record value for solution-processed inorganic structures, and a strong emission redistribution resulting in a 3-fold directional intensity enhancement.

Near-Infrared Light-Emitting Diodes Based on RoHS-Compliant InAs/ZnSe Colloidal Quantum Dots.

We demonstrate efficient, stable, and fully RoHS-compliant near-infrared (NIR) light-emitting diodes (LEDs) based on InAs/ZnSe quantum dots (QDs) synthesized by employing a commercially available amino-As precursor. They have a record external quantum efficiency of 5.5% at 947 nm and an operational lifetime of ∼32 h before reaching 50% of their initial luminance. Our findings offer a new solution for developing RoHS-compliant light-emitting technologies based on Pb-free colloidal QDs.

Layer-by-layer assembly of CsPbX3 nanocrystals into large-scale homostructures.

Advances in surface chemistry of CsPbX3 (where X = Cl, Br or I) nanocrystals (NCs) enabled the replacement of native chain ligands in solution. However, there are few reports on ligand exchange carried out on CsPbX3 NC thin films. Solid-state ligand exchange can improve the photoluminescence quantum yield (PLQY) of the film and promote a change in solubility of the solid surface, thus enabling multiple depositions of subsequent nanocrystal layers. Fine control of nanocrystal film thickness is of importance for light-emitting diodes (LEDs), solar cells and lasers alike. The thickness of the emissive material film is crucial to assure the copious recombination of charges injected into a LED, resulting in bright electroluminescence. Similarly, solar cell performance is determined by the amount of absorbed light, and hence the light absorber content in the device. In this study, we demonstrate a layer-by-layer (LbL) assembly method that results in high quality films, whose thicknesses can be finely controlled. In the solid state, we replaced oleic acid and oleylamine ligands with didodecyldimethylammonium bromide or ammonium thiocyanate that enhance the PLQY of the film. The exchange is carried out through a spin-coating technique, using solvents with strategic polarity to avoid NC dissolution or damage. Exploiting this technique, the deposition of various layers results in considerable thickening of films as proven by atomic force microscope measurements. The ease of handling of our combined process (i.e. ligand exchange and layer-by-layer deposition) enables thickness control over CsPbX3 NC films with applicability to other perovskite nanomaterials paving the way for a large variety of layer permutations.

Alloy CsCd x Pb1-x Br3 Perovskite Nanocrystals: The Role of Surface Passivation in Preserving Composition and Blue Emission.

Various strategies have been proposed to engineer the band gap of metal halide perovskite nanocrystals (NCs) while preserving their structure and composition and thus ensuring spectral stability of the emission color. An aspect that has only been marginally investigated is how the type of surface passivation influences the structural/color stability of AMX3 perovskite NCs composed of two different M2+ cations. Here, we report the synthesis of blue-emitting Cs-oleate capped CsCd x Pb1-x Br3 NCs, which exhibit a cubic perovskite phase containing Cd-rich domains of Ruddlesden-Popper phases (RP phases). The RP domains spontaneously transform into pure orthorhombic perovskite ones upon NC aging, and the emission color of the NCs shifts from blue to green over days. On the other hand, postsynthesis ligand exchange with various Cs-carboxylate or ammonium bromide salts, right after NC synthesis, provides monocrystalline NCs with cubic phase, highlighting the metastability of RP domains. When NCs are treated with Cs-carboxylates (including Cs-oleate), most of the Cd2+ ions are expelled from NCs upon aging, and the NCs phase evolves from cubic to orthorhombic and their emission color changes from blue to green. Instead, when NCs are coated with ammonium bromides, the loss of Cd2+ ions is suppressed and the NCs tend to retain their blue emission (both in colloidal dispersions and in electroluminescent devices), as well as their cubic phase, over time. The improved compositional and structural stability in the latter cases is ascribed to the saturation of surface vacancies, which may act as channels for the expulsion of Cd2+ ions from NCs.