Exploring an anomaly: the synthesis of 7,7'-diazaindirubin through a 7-azaindoxyl intermediate.

Two independent methods generating 7-azaindoxyl as an intermediate verify that 7,7'-diazaindirubin is formed exclusively over 7,7'-diazaindigo. This contrasts with long-standing knowledge related to the reactivity of indoxyl, which proceeds via a radical-initiated homodimerization process, leading to indigo. A series of experiments confirms 7-azaindoxyl as an intermediate with results suggesting a condensation pathway followed by oxidation.

Mechanism of extreme ultraviolet photoresist development with a supercritical CO2 compatible salt.

The mechanism of developing an extreme ultraviolet (EUV) commercial photoresist with supercritical carbon dioxide (scCO2) and a CO2 compatible salt (CCS) solution was studied. The cloud point of CCS in CO2 and the pressure at which the photoresist dissolves in CCS/scCO2 were determined for temperatures between 35 and 50 degrees C. For this temperature range, it was found that the CCS cloud point ranges between 11.2 and 16.1 MPa, while the photoresist dissolution point ranges from 15.5 to 21.3 MPa. The kinetics of the CCS/scCO2 development was modeled using a simplified rate equation, where the rate-limiting steps were photoresist dissolution and mass transfer. The effects of temperature, mass transfer, pressure, and CCS concentration on photoresist removal rate were further explored experimentally using a high-pressure quartz crystal microbalance (QCM). Increasing temperature (35-50 degrees C) at a constant fluid density of 0.896 g/mL was found to increase the removal rate following an Arrhenius behavior with a photoresist dissolution energy of activation, Ea, equal to 79.0 kJ/mol. The removal was zero order in CCS concentration, signifying photoresist phase transfer, photoresist mass transfer, or both were rate limiting. Mass transfer studies showed that circulation enhanced the photoresist removal rate, but that the mass transfer coefficient was independent of temperature from 35 degrees C to 50 degrees C. In pressure studies, increasing pressure (27.6-34.5 MPa) at a constant temperature of 40 degrees C increased the removal rate by enhancing the fluid density, but at 50 degrees C increasing pressure had little effect on the removal rate. When the total CCS concentration was in large global excess over the number of Bronsted acid groups in the polymer (2400:1 at 5 mM CCS concentration), the mass of photoresist removed varied linearly with time. At lower CCS concentrations but still in global excess of the number of Bronsted acid groups, the photoresist removal slowed (0.5 mm CCS, approximately 240:1) or was prevented (0.03 Mm CCS, approximately 15:1) due to partitioning of the CCS between the CO(2)-rich phase and the film. The CCS partitioning into the resist was found to decrease with increasing temperature, revealing an enthalpy-driven CCS absorption.

Etchant solutions for the removal of Cu(0) in a supercritical CO2-based "dry" chemical mechanical planarization process for device fabrication.

The microelectronics industry is focused on increasing chip complexity, improving the density of electron carriers, and decreasing the dimensions of the interconnects into the sub-0.25 mum regime while maintaining high aspect ratios. Water-based chemical mechanical planarization or polishing (CMP) faces several technical and environmental challenges. Condensed CO2 has significant potential for replacing current CMP solvents as a "dry" etching medium because of its unique properties. In working toward a condensed CO2-based CMP process, we have successfully investigated the oxidation and chelation of solid copper metal in liquid and supercritical CO2 using ethyl peroxydicarbonate and a beta-diketone chelating agent.