ABSTRACT
Interfaces separating ferromagnetic (FM) layers from non-ferromagnetic layers offer unique properties due to spin-orbit coupling and symmetry breaking, yielding effects such as exchange bias, perpendicular magnetic anisotropy, spin-pumping, spin-transfer torques, and conversion between charge and spin currents and vice versa. These interfacial phenomena play crucial roles in magnetic data storage and transfer applications, which require the formation of FM nanostructures embedded in non-ferromagnetic matrices. Here, we investigate the possibility of creating such nanostructures by ion irradiation. We study the effect of lateral confinement on the ion-irradiation-induced reduction of nonmagnetic metal oxides (e.g., antiferro- or paramagnetic) to form ferromagnetic metals. Our findings are later exploited to form three-dimensional magnetic interfaces between Co, CoO, and Pt by spatial-selective irradiation of CoO/Pt multilayers. We demonstrate that the mechanical displacement of O atoms plays a crucial role in the reduction from insulating, non-ferromagnetic cobalt oxides to metallic cobalt. Metallic cobalt yields both perpendicular magnetic anisotropy in the generated Co/Pt nanostructures and, at low temperatures, exchange bias at vertical interfaces between Co and CoO. If pushed to the limit of ion-irradiation technology, this approach could, in principle, enable the creation of densely packed, atomic-scale ferromagnetic point-contact spin-torque oscillator (STO) networks or conductive channels for current-confined-path-based current perpendicular-to-plane giant magnetoresistance read heads.
ABSTRACT
Spin-transfer torques (STTs) can be exploited in order to manipulate the magnetic moments of nanomagnets, thus allowing for new consumer-oriented devices to be designed. Of particular interest here are tuneable radio-frequency (RF) oscillators for wireless communication. Currently, the structure that maximizes the output power is an Fe/MgO/Fe-type magnetic tunnel junction (MTJ) with a fixed layer magnetized in the plane of the layers and a free layer magnetized perpendicular to the plane. This structure allows for most of the tunnel magnetoresistance (TMR) to be converted into output power. Here, we experimentally and theoretically demonstrate that the main mechanism sustaining steady-state precession in such structures is the angular dependence of the magnetoresistance. The TMR of such devices is known to exhibit a broken-linear dependence versus the applied bias. Our results show that the TMR bias dependence effectively quenches spin-transfer-driven precession and introduces a non-monotonic frequency dependence at high applied currents. This has an impact on devices seeking to work in the 'THz gap' due to their non-trivial TMR bias dependences.
