Memristive circuit-based model of central pattern generator to reproduce spinal neuronal activity in walking pattern.

Existing methods of neurorehabilitation include invasive or non-invasive stimulators that are usually simple digital generators with manually set parameters like pulse width, period, burst duration, and frequency of stimulation series. An obvious lack of adaptation capability of stimulators, as well as poor biocompatibility and high power consumption of prosthetic devices, highlights the need for medical usage of neuromorphic systems including memristive devices. The latter are electrical devices providing a wide range of complex synaptic functionality within a single element. In this study, we propose the memristive schematic capable of self-learning according to bio-plausible spike-timing-dependant plasticity to organize the electrical activity of the walking pattern generated by the central pattern generator.

Convolutional Neural Network Based on Crossbar Arrays of (Co-Fe-B)x(LiNbO3)100-x Nanocomposite Memristors.

Convolutional neural networks (CNNs) have been widely used in image recognition and processing tasks. Memristor-based CNNs accumulate the advantages of emerging memristive devices, such as nanometer critical dimensions, low power consumption, and functional similarity to biological synapses. Most studies on memristor-based CNNs use either software models of memristors for simulation analysis or full hardware CNN realization. Here, we propose a hybrid CNN, consisting of a hardware fixed pre-trained and explainable feature extractor and a trainable software classifier. The hardware part was realized on passive crossbar arrays of memristors based on nanocomposite (Co-Fe-B)x(LiNbO3)100-x structures. The constructed 2-kernel CNN was able to classify the binarized Fashion-MNIST dataset with ~ 84% accuracy. The performance of the hybrid CNN is comparable to the other reported memristor-based systems, while the number of trainable parameters for the hybrid CNN is substantially lower. Moreover, the hybrid CNN is robust to the variations in the memristive characteristics: dispersion of 20% leads to only a 3% accuracy decrease. The obtained results pave the way for the efficient and reliable realization of neural networks based on partially unreliable analog elements.

Parylene-based memristive crossbar structures with multilevel resistive switching for neuromorphic computing.

Currently, there is growing interest in wearable and biocompatible smart computing and information processing systems that are safe for the human body. Memristive devices are promising for solving such problems due to a number of their attractive properties, such as low power consumption, scalability, and the multilevel nature of resistive switching (plasticity). The multilevel plasticity allows memristors to emulate synapses in hardware neuromorphic computing systems (NCSs). The aim of this work was to study Cu/poly-p-xylylene(PPX)/Au memristive elements fabricated in the crossbar geometry. In developing the technology for manufacturing such samples, we took into account their characteristics, in particular stable and multilevel resistive switching (at least 10 different states) and low operating voltage (<2 V), suitable for NCSs. Experiments on cycle to cycle (C2C) switching of a single memristor and device to device (D2D) switching of several memristors have shown high reproducibility of resistive switching (RS) voltages. Based on the obtained memristors, a formal hardware neuromorphic network was created that can be trained to classify simple patterns.

Parylene Based Memristive Devices with Multilevel Resistive Switching for Neuromorphic Applications.

In this paper, the resistive switching and neuromorphic behaviour of memristive devices based on parylene, a polymer both low-cost and safe for the human body, is comprehensively studied. The Metal/Parylene/ITO sandwich structures were prepared by means of the standard gas phase surface polymerization method with different top active metal electrodes (Ag, Al, Cu or Ti of ~500 nm thickness). These organic memristive devices exhibit excellent performance: low switching voltage (down to 1 V), large OFF/ON resistance ratio (up to 104), retention (≥104 s) and high multilevel resistance switching (at least 16 stable resistive states in the case of Cu electrodes). We have experimentally shown that parylene-based memristive elements can be trained by a biologically inspired spike-timing-dependent plasticity (STDP) mechanism. The obtained results have been used to implement a simple neuromorphic network model of classical conditioning. The described advantages allow considering parylene-based organic memristors as prospective devices for hardware realization of spiking artificial neuron networks capable of supervised and unsupervised learning and suitable for biomedical applications.

Planar and 3D fibrous polyaniline-based materials for memristive elements.

The memristive elements constructed using polymers - polyaniline (PANI) and polyethyleneoxide (PEO) - could be assembled on planar thin films or on 3D fibrous materials. Planar conductive PANI-based materials were made using the Langmuir-Schaefer (LS) method, and the 3D materials - using the electrospinning method which is a scalable technique. We have analyzed the influence of PANI molar mass, natures of solvent and subphase on the crystalline structure, thickness and conductivity of planar LS films, and the influence of PANI molar mass and the PANI-PEO ratio on the morphological and structural characteristics of 3D fibrous materials.