Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell.

The nanoscale intrinsic electrical properties of in-plane InAs nanowires grown by selective area epitaxy are investigated using a process-free method involving a multi-probe scanning tunneling microscope. The resistance of oxide-free InAs nanowires grown on an InP(111)Bsubstrate and the resistance of InAs/GaSb core-shell nanowires grown on an InP(001) substrate are measured using a collinear four-point probe arrangement in ultrahigh vacuum. They are compared with the resistance of two-dimensional electron gas reference samples measured using the same method and with the Van der Pauw geometry for validation. A significant improvement of the conductance is achieved when the InAs nanowires are fully embedded in GaSb, exhibiting an intrinsic sheet conductance close to the one of the quantum well counterpart.

In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy.

In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and alloy composition fluctuations at the nanoscale on the tunneling properties of the diodes, whereas in the latter case we demonstrate that template assisted molecular beam epitaxy can be used to achieve a very precise control of tunnel diodes dimensions at the nanoscale with a scalable process. In both cases, negative differential resistances with large peak current densities are achieved.

Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III-V semiconductors.

The design of two-dimensional periodic structures at the nanoscale has renewed attention for band structure engineering. Here, we investigate the nanoperforation of InGaAs quantum wells epitaxially grown on InP substrates using high-resolution e-beam lithography and highly plasma based dry etching. We report on the fabrication of a honeycomb structure with an effective lattice constant down to 23 nm by realising triangular antidot lattice with an ultimate periodicity of 40 nm in a 10 nm thick InGaAs quantum well on a p-type InP. The quality of the honeycomb structures is discussed in detail, and calculations show the possibility to measure Dirac physics in these type of samples. Based on the statistical analysis of the fluctuations in pore size and periodicity, calculations of the band structure are performed to assess the robustness of the Dirac cones with respect to distortions of the honeycomb lattice.

In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate.

In-plane InSb nanostructures are grown on a semi-insulating GaAs substrate using an AlGaSb buffer layer covered with a patterned SiO2 mask and selective area molecular beam epitaxy. The shape of these nanostructures is defined by the aperture in the silicon dioxide layer used as a selective mask thanks to the use of an atomic hydrogen flux during the growth. Transmission electron microscopy reveals that the mismatch accommodation between InSb and GaAs is obtained in two steps via the formation of an array of misfit dislocations both at the AlGaSb buffer layer/GaAs and at the InSb nanostructures/AlGaSb interfaces. Several micron long in-plane nanowires (NWs) can be achieved as well as more complex nanostructures such as branched NWs. The electrical properties of the material are investigated by the characterization of an InSb NW MOSFET down to 77 K. The resulting room temperature field effect mobility values are comparable with those reported on back-gated MOSFETs based on InSb NWs obtained by vapor liquid solid growth or electrodeposition. This growth method paves the way to the fabrication of complex InSb-based nanostructures.

Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement.

The growth of in-plane GaSb nanotemplates on a GaAs (001) substrate is demonstrated combining nanoscale patterning of the substrate and selective area heteroepitaxy. The selective growth of GaSb inside nano-stripe openings in a SiO2 mask layer is achieved at low temperature thanks to the use of an atomic hydrogen flux during the molecular beam epitaxy. These growth conditions promote the spreading of GaSb inside the apertures and lattice mismatch accommodation via the formation of a regular array of misfit dislocations at the interface between GaSb and GaAs. We highlight the impact of the nano-stripe orientation as well as the role of the Sb/Ga flux ratio on the strain relaxation of GaSb along the [110] direction and on the nanowire length along the [1-10] one. Finally we demonstrate how these GaSb nanotemplates can be used as pedestals for subsequent growth of in-plane InAs nanowires.

Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.

Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy.

We report on the selective area molecular beam epitaxy of InAs/AlGaSb heterostructures on a GaSb (001) substrate. This method is used to realize Esaki tunnel diodes with a tunneling area down to 50 nm × 50 nm. The impact of the size reduction on the peak current density of the diode is investigated, and we show how the formation of the InAs facets can deeply affect the band-to-band tunneling properties of the heterostructure. This phenomenon is explained by the surface-dependent incorporation of Si dopant during growth.

Coherent tunnelling across a quantum point contact in the quantum Hall regime.

The unique properties of quantum hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has already revealed rich physics, like fractionally charged excitations, or chiral Luttinger liquid. Thanks to scanning gate microscopy, we show that a single QPC can turn into an interferometer for specific potential landscapes. Spectroscopy, magnetic field and temperature dependences of electron transport reveal a quantitatively consistent interferometric behavior of the studied QPC. To explain this unexpected behavior, we put forward a new model which relies on the presence of a quantum Hall island at the centre of the constriction as well as on different tunnelling paths surrounding the island, thereby creating a new type of interferometer. This work sets the ground for new device concepts based on coherent tunnelling.

Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy.

In this paper, the impact of growth parameters on the strain relaxation of highly lattice mismatched (11.8%) GaSb grown on GaP substrate by molecular beam epitaxy has been investigated. The surface morphology, misfit dislocation and strain relaxation of the GaSb islands are shown to be highly related to the initial surface treatment, growth rate and temperature. More specifically, Sb-rich surface treatment is shown to promote the formation of Lomer misfit dislocations. Analysis of the misfit dislocation and strain relaxation as functions of the growth temperature and rate led to an optimal growth window for a high quality GaSb epitaxial layer on (001) GaP. With this demonstrated optimized growth, a high mobility (25,500 cm(2) V (-1) s(-1) at room temperature) AlSb/InAs heterostructure on a semi-insulating (001) GaP substrate has been achieved.

Transport inefficiency in branched-out mesoscopic networks: an analog of the Braess paradox.

We present evidence for a counterintuitive behavior of semiconductor mesoscopic networks that is the analog of the Braess paradox encountered in classical networks. A numerical simulation of quantum transport in a two-branch mesoscopic network reveals that adding a third branch can paradoxically induce transport inefficiency that manifests itself in a sizable conductance drop of the network. A scanning-probe experiment using a biased tip to modulate the transmission of one branch in the network reveals the occurrence of this paradox by mapping the conductance variation as a function of the tip voltage and position.

Imaging Coulomb islands in a quantum Hall interferometer.

In the quantum Hall regime, near integer filling factors, electrons should only be transmitted through spatially separated edge states. However, in mesoscopic systems, electronic transmission turns out to be more complex, giving rise to a large spectrum of magnetoresistance oscillations. To explain these observations, recent models put forward the theory that, as edge states come close to each other, electrons can hop between counterpropagating edge channels, or tunnel through Coulomb islands. Here, we use scanning gate microscopy to demonstrate the presence of QH Coulomb islands, and reveal the spatial structure of transport inside a QH interferometer. Locations of electron islands are found by modulating the tunnelling between edge states and confined electron orbits. Tuning the magnetic field, we unveil a continuous evolution of active electron islands. This allows to decrypt the complexity of high-magnetic-field magnetoresistance oscillations, and opens the way to further local-scale manipulations of QH localized states.

[A practical example of the application of the "Belgian geriatric evaluation and management program" within a general hospital]. / Une application du "plan de soin gériatrique" selon l'arrêté royal du 29.01.2007 au sein d'un hôpital général.

A concrete realisation of the "Geriatric assessment and management program" as described in the arrêté royal within a general hospital: definition of the geriatric patient, his detection, his follow-up and the transmission of patient information. The analysis of the first results indicates the importance of the biographic and socio-economics factors. The optimisation of an early screening and the communication between caregivers are key aspects to enhance the care of this patients.

[Tricuspid endocarditis caused by Chlamydia pneumoniae. Apropos of a case]. / Endocardite tricuspide due à Chlamydia pneumoniae. A propos d'un cas.

The authors report a case of tricuspid blood culture-negative endocarditis where serologic investigations showed high titers of antibodies against. Chlamydia pneumoniae, thus suggesting its possible role as the causal agent. The treatment consisted of polymicrobial therapy using ciprofloxacine and doxycycline with favorable response thus avoiding surgical intervention. In all cases of culture-negative endocarditis not responding to classic empiric antibiotics, Chlamydia infection should be suspected. Although rare cases of endocarditis due to Chlamydia pneumoniae have been reported in the literature, to our knowledge, this is the first case of isolated tricuspid valve endocarditis due to this agent to be reported.