Determination of the direct bandgap value in In4Se3thin films.

The value and the nature of the bandgap of In4Se3are still not well defined, with a large spread of the experimental data between 0.42 and 1.68 eV and an uncertain nature, predicted to be indirect byab initioband structure calculations. Here we report on the optical transmission and photoluminescence (PL) performed in In4Se3thin films grown by coevaporation on (0001)-oriented sapphire wafers. The quality of the polycrystalline layers allows the first detection of the excitonic-like transition in the optical absorption of this compound at low temperature. The PL detected under weak laser excitation shows a bound exciton emission at 0.75 eV. Strong laser irradiation reveals a quadratic dependence of the PL intensity on the optical excitation, which demonstrates a stimulated emission at 0.79 eV in relation with an exciton-exciton scattering process. On the basis of a reasonable estimate of the exciton energy, equal to10-15meV, we evaluate the direct bandgap of In4Se3to0.82±0.01eV at low temperature.

InSe as a case between 3D and 2D layered crystals for excitons.

InSe is a promising material in many aspects where the role of excitons is decisive. Here we report the sequential appearance in its luminescence of the exciton, the biexciton, and the P-band of the exciton-exciton scattering while the excitation power increases. The strict energy and momentum conservation rules of the P-band are used to reexamine the exciton binding energy. The new value ≥20 meV is markedly higher than the currently accepted one (14 meV), being however well consistent with the robustness of the excitons up to room temperature. A peak controlled by the Sommerfeld factor is found near the bandgap (~1.36 eV). Our findings supported by theoretical calculations taking into account the anisotropic material parameters question the pure three-dimensional character of the exciton in InSe, assumed up to now. The refined character and parameters of the exciton are of paramount importance for the successful application of InSe in nanophotonics.

Temperature-Induced Topological Phase Transition in HgTe Quantum Wells.

We report a direct observation of temperature-induced topological phase transition between the trivial and topological insulator states in an HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures, and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electronlike and holelike subbands. Their crossing at a critical magnetic field B_{c} is a characteristic of inverted band structure in the quantum well. By measuring the temperature dependence of B_{c}, we directly extract the critical temperature T_{c} at which the bulk band gap vanishes and the topological phase transition occurs. Above this critical temperature, the opening of a trivial gap is clearly observed.

Puddle-Induced Resistance Oscillations in the Breakdown of the Graphene Quantum Hall Effect.

We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The ν=2 quantized plateau appears from fields B≃5 T and persists up to B≃80 T. At high current density, in the breakdown regime, the longitudinal resistance oscillates with a 1/B periodicity and an anomalous phase, which we relate to the presence of additional electron reservoirs. The high field experimental data suggest that these reservoirs induce a continuous increase of the carrier density up to the highest available magnetic field, thus enlarging the quantum plateaus. These in-plane inhomogeneities, in the form of high carrier density graphene pockets, modulate the quantum Hall effect breakdown and decrease the breakdown current.

Magneto-Optical Signature of Massless Kane Electrons in Cd_{3}As_{2}.

We report on optical reflectivity experiments performed on Cd_{3}As_{2} over a broad range of photon energies and magnetic fields. The observed response clearly indicates the presence of 3D massless charge carriers. The specific cyclotron resonance absorption in the quantum limit implies that we are probing massless Kane electrons rather than symmetry-protected 3D Dirac particles. The latter may appear at a smaller energy scale and are not directly observed in our infrared experiments.

Temperature-driven massless Kane fermions in HgCdTe crystals.

It has recently been shown that electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in condensed matter systems. These single valley relativistic states, massless Kane fermions, cannot be described by any other relativistic particles. Furthermore, the HgCdTe band structure can be continuously tailored by modifying cadmium content or temperature. At critical concentration or temperature, the bandgap collapses as the system undergoes a semimetal-to-semiconductor topological phase transition between the inverted and normal alignments. Here, using far-infrared magneto-spectroscopy we explore the continuous evolution of band structure of bulk HgCdTe as temperature is tuned across the topological phase transition. We demonstrate that the rest mass of Kane fermions changes sign at critical temperature, whereas their velocity remains constant. The velocity universal value of (1.07±0.05) × 10(6) m s(-1) remains valid in a broad range of temperatures and Cd concentrations, indicating a striking universality of the pseudo-relativistic description of the Kane fermions in HgCdTe.

Disorder-Induced Stabilization of the Quantum Hall Ferromagnet.

We report on an absolute measurement of the electronic spin polarization of the ν=1 integer quantum Hall state. The spin polarization is extracted in the vicinity of ν=1 (including at exactly ν=1) via resistive NMR experiments performed at different magnetic fields (electron densities) and Zeeman energy configurations. At the lowest magnetic fields, the polarization is found to be complete in a narrow region around ν=1. Increasing the magnetic field (electron density) induces a significant depolarization of the system, which we attribute to a transition between the quantum Hall ferromagnet and the Skyrmion glass phase theoretically expected as the ratio between Coulomb interactions and disorder is increased. These observations account for the fragility of the polarization previously observed in high mobility 2D electron gas and experimentally demonstrate the existence of an optimal amount of disorder to stabilize the ferromagnetic state.

W line shape in the resistively detected nuclear magnetic resonance.

The resistively detected nuclear magnetic resonance (RDNMR) performed on a two-dimensional electron gas is known to exhibit a peculiar 'dispersive' line shape at some filling factors, especially around ν = 1. Here, we study in detail the inversion of the dispersive line shape as a function of the filling factor from ν = 1 to 2/3. The RDNMR spectra show a new characteristic W line shape in the longitudinal resistance, whereas dispersive lines detected in the Hall resistance remain unchanged. This W resonance, like the dispersive line, can be fitted correctly by a model of two independent response functions, which are the signatures of polarized and unpolarized electronic sub-systems.

Resistively detected nuclear magnetic resonance in the quantum hall regime: possible evidence for a Skyrme crystal.

Resistively detected nuclear magnetic resonance measurements have been performed on a high mobility heterostructure in the quantum Hall regime. At millikelvin temperatures the nuclear resonances are observed in the vicinity of various integer and fractional filling factors without previous dynamic nuclear polarization. Near nu = 1, the observed large enhancement of the resonance amplitude accompanied by a reduction of T1 strongly suggests a greatly increased coupling between the electronic and nuclear spin systems. This is consistent with the proposed coupling of the nuclear spin system to the Goldstone mode of the Skyrme crystal.