Unveiling the Intrinsic Photophysics in Quasi-Two-Dimensional Perovskites.

The two-dimensional (2D) perovskites have drawn intensive attention due to their unique stability and outstanding optoelectronic properties. However, the debate surrounding the spatial phase distribution and band alignment among different 2D phases in the quasi-2D perovskite has created complexities in understanding the carrier dynamics, hindering material and device development. In this study, we employed highly sensitive transient absorption spectroscopy to investigate the carrier dynamics of (BA)2(MA)n-1PbnI3n+1 quasi-2D Ruddlesden-Popper perovskite thin films, nominally prepared as n = 4. We observed the carrier-density-dependent electron and hole transfer dynamics between the 2D and three-dimensional (3D) phases. Under a low carrier density within the linear response range, we successfully resolved three ultrafast processes of both electron and hole transfers, spanning from hundreds of femtoseconds to several picoseconds, tens to hundreds of picoseconds, and hundreds of picoseconds to several nanoseconds, which can be attributed to lateral-epitaxial, partial-epitaxial, and disordered-interface heterostructures between 2D and 3D phases. By considering the interplay among the phase structure, band alignment, and carrier dynamics, we have proposed material synthesis strategies aimed at enhancing the carrier transport. Our results not only provide deep insights into an accurate intrinsic photophysics of quasi-2D perovskites but also inspire advancements in the practical application of these materials.

X-Site Substituted 2D Cs2 Pb(SCN)2 Br2 Perovskites for X-Ray Detection.

2D Ruddlesden-Popper (RP) perovskites have been intensively investigated due to their superior stability and outstanding optoelectrical properties. However, investigations on 2D RP perovskites are mainly focused on A-site substituted perovskites and few reports are on X-site substituted perovskites especially in X-ray detection field. Here, X-site substituted 2D RP perovskite Cs2 Pb(SCN)2 Br2 polycrystalline wafers are prepared and systematically studied for X-ray detection. The obtained wafers show a large resistivity of 2.0 × 1010 Ω cm, a high ion activation energy of 0.75 eV, a small current drift of 2.39 × 10-6 nA cm-1 s-1 V-1 , and charge carrier mobility-lifetime product under X-ray as high as 1.29 × 10-4 cm2 V-1 . These merits enable Cs2 Pb(SCN)2 Br2 wafer detectors with a sensitivity of 216.3 µC Gyair -1 cm-2 , a limit of detection of 42.4 nGyair s-1 , and good imaging ability with high spatial resolution of 1.08 lp mm-1 . In addition, Cs2 Pb(SCN)2 Br2 wafer detectors demonstrate excellent operational stability under high working field up to 2100 V cm-1 after continuous X-ray irradiation with a total dose of 45.2 Gyair . The promising features such as short octahedral spacing and weak ion migration will open up a new perspective and opportunity for SCN-based 2D perovskites in X-ray detection.

Regulating 3D Phase in Quasi-2D Perovskite Films for High-Performance and Stable Photodetectors.

The charge transport in quasi-2D perovskites limits their applications despite the superior stability and optoelectronic properties. Herein, a novel strategy is proposed to enhance the charge transport by regulating 3D perovskite phase in quasi-2D perovskite films. The carbohydrazide (CBH) as an additive is introduced into (PEA)2 MA3 Pb4 I13 precursors, which slows down the crystallization process and improves the phase ratio and crystal quality of the 3D phase. This structure change results in a significant improvement in charge transport and extraction, leading to the device demonstrating an almost 100% internal quantum efficiency, a peak responsivity of 0.41 A W-1 , and a detectivity of 1.31 × 1012 Jones at 570 nm under 0 V bias. Furthermore, the air and moisture stability of (PEA)2 MA3 Pb4 I13 films is not deteriorated but gets significantly improved due to the better crystal quality and the passivation of defects by the residual CBH molecule. This work demonstrates a strategy for improving the charge transport properties of quasi-2D perovskites and also sheds light on solving the stability issue of 3D perovskite films via the proper passivation or additives, which will inspire the fast development of the perovskite community.

Effects of Chemical Valences of Sulfur on the Performance of CsFAMA Perovskite Solar Cells.

The low electrical conductivity and the high surface defect density of the TiO2 electron transport layer (ETL) limit the quality of the following perovskite (PVK) layers and the power conversion efficiency (PCE) of corresponding perovskite solar cells (PSCs). Sulfur was reported as an effective element to passivate the TiO2 layer and improve the PCE of PSCs. In this work, we further investigate the effect of chemical valences of sulfur on the performance of TiO2/PVK interfaces, CsFAMA PVK layers, and solar cells using TiO2 ETL layers treated with Na2S, Na2S2O3, and Na2SO4, respectively. Experimental results show that the Na2S and Na2S2O3 interfacial layers can enlarge the grain size of PVK layers, reduce the defect density at the TiO2/PVK interface, and improve the device efficiency and stability. Meanwhile, the Na2SO4 interfacial layer leads to a smaller perovskite grain size and a slightly degraded TiO2/PVK interface and device performance. These results indicate that S2- can obviously improve the quality of TiO2 and PVK layers and TiO2/PVK interfaces, while SO42- has little effects, even negative effects, on PSCs. This work can deepen the understanding of the interaction between sulfur and the PVK layer and may inspire further progress in the surface passivation field.

Probing the Genuine Carrier Dynamics of Semiconducting Perovskites under Sunlight.

Understanding the nature of photogenerated carriers and their subsequent dynamics in semiconducting perovskites is important for the development of solar cell materials and devices. However, most ultrafast dynamic measurements on perovskite materials were conducted under high carrier densities, which likely obscures the genuine dynamics under low carrier densities in solar illumination conditions. In this study, we presented a detailed experimental study of the carrier density-dependent dynamics in hybrid lead iodide perovskites from femtosecond to microsecond using a highly sensitive transient absorption (TA) spectrometer. From the dynamic curves with low carrier density in the linear response range, we observed two fast trapping processes that occurred in less than 1 ps and tens of picoseconds, attributed to the shallow traps, and two slow decays with lifetimes of hundreds of nanoseconds and longer than 1 µs, related to the trap-assisted recombination and trapping at deep traps. Further TA measurements clearly show that PbCl2 passivation can effectively reduce both shallow and deep trap densities. These results provide insights into the intrinsic photophysics of semiconducting perovskites with direct implications for photovoltaic and optoelectronic applications under sunlight.

Highly efficient copper halide scintillators for high-performance and dynamic X-ray imaging.

Progress towards high performance X-ray detection and dynamic imaging applications, including nondestructive inspection, homeland security, and medical diagnostics, requires scintillators with a high light yield, a reasonable decay time, low cost, and eco-friendliness. Recently, copper halide scintillators have drawn tremendous attention due to their outstanding radioluminescence performance. Here, we first employed ß-Cs3Cu2Cl5 as a high-performance scintillator, with a photoluminescence quantum yield (PLQY) of 94.6%, a radioluminescence light yield of 34 000 ± 4000 photons per MeV, a low detection limit of 81.7 nGyair s-1, and good operational stability under a total X-ray dose of 174.6 Gyair in air. In addition, this scintillator presents a high spatial resolution of 9.6 lp mm-1 at the modulation transfer function of 0.2 and a superb performance at 60 frames per second in our X-ray imaging system. Overall, this highly efficient scintillator demonstrates outstanding comprehensive performance and shows great potential for broad applications in X-ray detection and dynamic imaging.

High-Performance Perovskite Betavoltaics Employing High-Crystallinity MAPbBr3 Films.

Long-life and self-powered betavoltaic batteries are extremely attractive for many fields that require a long-term power supply, such as space exploration, polar exploration, and implantable medical technology. Organic lead halide perovskites are great potential candidate materials for betavoltaic batteries due to the large attenuation coefficient and the long carrier diffusion length, which guarantee the scale match between the penetration depth of ß particles and the carrier diffusion length. However, the performance of perovskite betavoltaics is limited by the fabrication process of the thick and high-crystallinity perovskite film. In this work, we demonstrated high-performance perovskite betavoltaic cells using thick, high-quality, and wide-band-gap MAPbBr3 polycrystalline films. The solvent annealing method was adopted to improve the crystallinity and eliminate the pinholes in the MAPbBr3 film. The optimal MAPbBr3 betavoltaic cell achieved a power conversion efficiency (PCE) of 5.35% and a maximum output power of 1.203 µW under radiation of electrons of 15 keV with an equivalent activity of 253 mCi. These results are a nearly 50% improvement from previous reports. Effects of the MAPbBr3 perovskite layer thickness on the device performance were also discussed. The mechanisms of film-growth processes and device physics could provide insights for the research community of perovskites and betavoltaics.

Effects of ITO Substrate Hydrophobicity on Crystallization and Properties of MAPbBr3 Single-Crystal Thin Films.

Fabricating perovskite single-crystal thin films (SCTFs) in controllable manner is the major challenge for the promising potential applications in optoelectronic devices. Although modifying the substrate surface is frequently used to realize the controlled growth of perovskite SCTFs, it is still unclear how the substrate condition affects the crystallization process. In this work, we systemically investigated the effects of the surface hydrophobicity of indium tin oxide substrates on the crystallization process of MAPbBr3 SCTFs prepared by the space-confined method. Comprehensive characterizations show that the surface morphology and crystallinity of SCTFs are improved, and the defect density is reduced when increasing the substrate hydrophobicity. The best MAPbBr3 thin film obtained has a full width at half-height of the rocking curve of the (001) crystal plane of 0.044°. The mechanism of the substrate hydrophobicity on the crystal growth is also discussed. These results will provide guidance to the controllable growth of high-quality SCTFs for perovskite SCTF devices.