ABSTRACT
Redox-based resistive switching memories (ReRAMs) are the strongest candidates for next generation nonvolatile memories. These devices are commonly composed of metal/solid electrolyte/metal junctions, where the solid electrolyte is usually an oxide layer. A key aspect in the ReRAMs development is the solid electrolyte engineering, since it is crucial to tailor the material properties for obtaining excellent switching properties (e.g. retention, endurance, etc.). Here we present an anodizing process as a non vacuum and low temperature electrochemical technique for growing oxides with tailored structural and electronic properties. The effect of the anodizing conditions on the solid state properties of the anodic oxides is studied in relation to the final ReRAM device performances demonstrating the great potentiality of this technique to produce high quality oxide thin films for resistive switching memories.
ABSTRACT
Anodic films were grown to 20 V on sputtering-deposited Al-Ta alloys in ammonium biborate and borate buffer solutions. According to glow discharge optical emission spectroscopy, anodizing in ammonium containing solution leads to the formation of N containing anodic layers. Impedance measurements did not evidence significant differences between the dielectric properties of the anodic films as a function of the anodizing electrolyte. Photoelectrochemical investigation allowed evidencing that N incorporation induces a red-shift in the light absorption threshold of the films due to the formation of allowed localized states inside their mobility gap. The estimated Fowler threshold for the internal photoemission processes of electrons resulted to be independent of the anodizing electrolyte confirming that N incorporation does not appreciably affect the density of states distribution close to the conduction band mobility edge. The transport of photogenerated carriers has been rationalized according to the Pai-Enck model of geminate recombination.
ABSTRACT
New experimental evidence concerning the formation of La(OH)3 nanowires on anodic alumina membranes by cathodic polarization in 0.05 M lanthanum nitrate solution is provided to further support the conclusions previously reached in our work (Bocchetta et al 2007 Electrochem. Commun. 9 683-8) and recently criticized by González-Rovira et al (Nanotechnology 2008 19 495305). Some unconvincing aspects of the paper of González-Rovira et al, according to which the same electrochemical process should lead to the formation of hydroxycarbonate nanotubes, are also discussed.
