ABSTRACT
Exciton-polaritons derived from the strong light-matter interaction of an optical bound state in the continuum with an excitonic resonance can inherit an ultralong radiative lifetime and significant nonlinearities, but their realization in two-dimensional semiconductors remains challenging at room temperature. Here we show strong light-matter interaction enhancement and large exciton-polariton nonlinearities at room temperature by coupling monolayer tungsten disulfide excitons to a topologically protected bound state in the continuum moulded by a one-dimensional photonic crystal, and optimizing for the electric-field strength at the monolayer position through Bloch surface wave confinement. By a structured optimization approach, the coupling with the active material is maximized here in a fully open architecture, allowing to achieve a 100 meV photonic bandgap with the bound state in the continuum in a local energy minimum and a Rabi splitting of 70 meV, which results in very high cooperativity. Our architecture paves the way to a class of polariton devices based on topologically protected and highly interacting bound states in the continuum.
ABSTRACT
The field-effect control of the electrical and optical properties of two-dimensional (2D) van der Waals semiconductors (vdW) is one important aspect of this novel class of materials. Thanks to their reduced thickness and decreased screening, electric fields can easily penetrate in a 2D semiconductor and thus modulate their charge density and their properties. In literature, the field effect is routinely used to fabricate atomically thin field-effect transistors based on 2D semiconductors. Apart from the tuning of the electrical transport, it has been demonstrated that the field effect can also be used to modulate the excitonic optical emission of 2D transition metal dichalcogenides such as MoS2 or WSe2. In this paper, we present some recent experiments on the field-effect control of the optical and excitonic properties of the monolayer WS2. Using the deterministic transfer of van der Waals materials, we fabricate planar single-layer WS2 devices contacted by a gold electrode and partially sandwiched between two insulating hexagonal boron nitride (hBN) flakes. Thanks to the planar nature of the device, we can optically access both the hBN encapsulated and the unencapsulated WS2 regions and compare the field-effect control of the exciton population in the two cases. We find that the encapsulation strongly increases the range of tunability of the optical emission of WS2, allowing us to tune the photoluminescence emission from excitons-dominated to trions-dominated. We also discuss how the full encapsulation of WS2 with hBN helps reduce spurious hysteretic effects in the field-effect control of the optical properties, similar to what has been reported for 2D vdW field-effect transistors.
ABSTRACT
Rhenium disulfide belongs to group VII transition metal dichalcogenides (TMDs) with attractive properties such as exceptionally high refractive index and remarkable oscillator strength, large in-plane birefringence, and good chemical stability. Unlike most other TMDs, the peculiar optical properties of rhenium disulfide persist from bulk to the monolayer, making this material potentially suitable for applications in optical devices. In this work, we demonstrate with unprecedented clarity the strong coupling between cavity modes and excited states, which results in a strong polariton interaction, showing the interest of these materials as a solid-state counterpart of Rydberg atomic systems. Moreover, we definitively clarify the nature of important spectral features, shedding light on some controversial aspects or incomplete interpretations and demonstrating that their origin is due to the interesting combination of the very high refractive index and the large oscillator strength expressed by these TMDs.
