Influence of aluminium doping on high purity quartz glass properties.

High purity natural quartz is used as raw material for the manufacture of quartz glass crucibles for solar-grade silicon ingots production. One key challenge for cost-effective ingot pulling is to maximise the ability of the crucible to withstand the process conditions (i.e., silicon load and temperature about 1500 °C) without deformation. In order to improve this glass property, aluminium was coated into the raw quartz materials. Our results showed that an addition of up to 1000 wt ppm Al substantially reduces deformation of glass and improves viscosity at high temperatures. This is likely due to the reduction of stability of OH groups in the quartz glass as well as a trapping effect of aluminium on oxygen vacancies. This hypothesis is also supported by atomistic models. In the presence of Al, formation energies of silanol groups (Si-O-H) were much higher than without. Furthermore, the presence of Al in the structure significantly reduces mobility of the oxygen vacancies. It was also found that formation of oxygen vacancies hinders cristobalite crystallisation, on the other hand, Al atoms themselves induce local weakening of the Si-O bond which accelerates the kinetics of the reconstructive phase transition from glassy state to crystalline phase. This was also confirmed experimentally in our study.

Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications-Effects of Precursor and Operating Conditions.

Two widely used atomic layer deposition precursors, Tetrakis (dimethylamido) titanium (TDMA-Ti) and titanium tetrachloride (TiCl4), were investigated for use in the deposition of TiOx-based thin films as a passivating contact material for solar cells. This study revealed that both precursors are suited to similar deposition temperatures (150 °C). Post-deposition annealing plays a major role in optimising the titanium oxide (TiOx) film passivation properties, improving minority carrier lifetime (τeff) by more than 200 µs. Aluminium oxide deposited together with titanium oxide (AlOy/TiOx) reduced the sheet resistance by 40% compared with pure TiOx. It was also revealed that the passivation quality of the (AlOy/TiOx) stack depends on the precursor and ratio of AlOy to TiOx deposition cycles.

Application of 7N In as secondary cathode for the direct current-glow discharge mass spectrometry analysis of solid, fused high-purity quartz.

Direct current glow discharge mass spectrometry with an indium-based secondary cathode technique is used to analyze solid, nonconducting, fused high-purity quartz regarding metallic impurities of relevance to the solar industry. Details of the analytical routines are presented. In this work, the secondary cathode design and glow discharge conditions are optimized beyond the commonly applied practices. In addition, relative sensitivity factors (RSFs) for these optimized conditions are established and compared to previously published results. The results indicate that the technique enables stable measurements with detection limits down to the part per billion (ppb) range.

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide.

In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 °C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of ~ 1.15 Å/cycle showed a density of ~ 2.1 g/cm3, a refractive index of ~ 1.46 at a wavelength of 632 nm, and a low tensile residual stress of ~ 30 MPa. Furthermore, the films showed low impurity levels with bulk concentrations of ~ 2.4 and ~ 0.17 at. % for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.

Guidelines for establishing an etching procedure for dislocation density measurements on multicrystalline silicon samples.

With multicrystalline silicon becoming the main material used for photovoltaic applications and dislocations being one of the main material limitations to better solar cell efficiency, etch pit density measurements are gaining more importance. Traditionally, etch pit density measurements are based on selective etching of silicon samples. The majority of the etchants have been developed for monocrystalline samples with known orientation, while those developed for multicrystalline samples have been less investigated and might need some optimization. In this study, we use and compare the PVScan tool, which provides a quick way to assess dislocation density on selectively etched samples, and microscope image analysis. We show how the etching methods used for dislocation density measurements can affect the results, and we suggest how to optimize the Sopori etching procedure for multicrystalline silicon samples with high dislocation densities. We also show how the Sopori etchant can be used to substitute Secco while maintaining a high precision of dislocation density measurements, but without the toxic hexavalent chromium compounds.

On copper diffusion in silicon measured by glow discharge mass spectrometry.

Copper contamination occurs frequently in silicon for photovoltaic applications due to its very fast diffusion coupled with a low solid solubility, especially at room temperature. The combination of these properties exerts a challenge on the direct analysis of Cu bulk concentration in Si by sputtering techniques like glow discharge mass spectrometry (GDMS). This work aims at addressing the challenges in quantitative analysis of fast diffusing elements in Si matrix by GDMS. N-type, monocrystalline (Czochralski) silicon samples were intentionally contaminated with Cu after solidification and consequently annealed at 900 °C to ensure a homogeneous distribution of Cu in the bulk. The samples were quenched after annealing to control the extent of the diffusion to the surface prior to the GDMS analyses, which were carried out at different time intervals from within few minutes after cooling onward. The Cu profiles were measured by high-resolution GDMS operating in a continuous direct current mode, where the integration step length was set to ∼0.5 µm over a total sputtered depth of 8-30 µm. The temperature of the samples during the GDMS analyses was also measured in order to evaluate the diffusion. The Cu contamination of n-type Si samples was observed to be highly material dependent. The practical impact of Cu out-diffusion on the calculation of the relative sensitivity factor (RSF) of Cu in Si is discussed.