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1.
Phys Rev Lett ; 132(12): 126502, 2024 Mar 22.
Article in English | MEDLINE | ID: mdl-38579201

ABSTRACT

LiCu_{3}O_{3} is an antiferromagnetic mixed valence cuprate where trilayers of edge-sharing Cu(II)O (3d^{9}) are sandwiched in between planes of Cu(I) (3d^{10}) ions, with Li stochastically substituting Cu(II). Angle-resolved photoemission spectroscopy (ARPES) and density functional theory reveal two insulating electronic subsystems that are segregated in spite of sharing common oxygen atoms: a Cu d_{z^{2}}/O p_{z} derived valence band (VB) dispersing on the Cu(I) plane, and a Cu 3d_{x^{2}-y^{2}}/O 2p_{x,y} derived Zhang-Rice singlet (ZRS) band dispersing on the Cu(II)O planes. First-principle analysis shows the Li substitution to stabilize the insulating ground state, but only if antiferromagnetic correlations are present. Li further induces substitutional disorder and a 2D electron glass behavior in charge transport, reflected in a large 530 meV Coulomb gap and a linear suppression of VB spectral weight at E_{F} that is observed by ARPES. Surprisingly, the disorder leaves the Cu(II)-derived ZRS largely unaffected. This indicates a local segregation of Li and Cu atoms onto the two separate corner-sharing Cu(II)O_{2} sub-lattices of the edge-sharing Cu(II)O planes, and highlights the ubiquitous resilience of the entangled two hole ZRS entity against impurity scattering.

2.
Nat Commun ; 10(1): 648, 2019 02 06.
Article in English | MEDLINE | ID: mdl-30728356

ABSTRACT

This Article contains an error in the spelling of the author A. Yazdani, which is incorrectly given as A. Yadzani. The error has not been fixed in the original PDF and HTML versions of the Article.

3.
Phys Rev Lett ; 119(25): 256404, 2017 Dec 22.
Article in English | MEDLINE | ID: mdl-29303315

ABSTRACT

Upon reduction of the film thickness we observe a metal-insulator transition in epitaxially stabilized, spin-orbit-coupled SrIrO_{3} ultrathin films. By comparison of the experimental electronic dispersions with density functional theory at various levels of complexity we identify the leading microscopic mechanisms, i.e., a dimensionality-induced readjustment of octahedral rotations, magnetism, and electronic correlations. The astonishing resemblance of the band structure in the two-dimensional limit to that of bulk Sr_{2}IrO_{4} opens new avenues to unconventional superconductivity by "clean" electron doping through electric field gating.

5.
Nat Commun ; 7: 10847, 2016 Feb 29.
Article in English | MEDLINE | ID: mdl-26924386

ABSTRACT

The behaviour of electrons and holes in a crystal lattice is a fundamental quantum phenomenon, accounting for a rich variety of material properties. Boosted by the remarkable electronic and physical properties of two-dimensional materials such as graphene and topological insulators, transition metal dichalcogenides have recently received renewed attention. In this context, the anomalous bulk properties of semimetallic WTe2 have attracted considerable interest. Here we report angle- and spin-resolved photoemission spectroscopy of WTe2 single crystals, through which we disentangle the role of W and Te atoms in the formation of the band structure and identify the interplay of charge, spin and orbital degrees of freedom. Supported by first-principles calculations and high-resolution surface topography, we reveal the existence of a layer-dependent behaviour. The balance of electron and hole states is found only when considering at least three Te-W-Te layers, showing that the behaviour of WTe2 is not strictly two dimensional.

6.
Phys Rev Lett ; 115(9): 096405, 2015 Aug 28.
Article in English | MEDLINE | ID: mdl-26371669

ABSTRACT

We report the formation and observation of an electron liquid in Sr(2-x)La(x)TiO4, the quasi-two-dimensional counterpart of SrTiO3, through reactive molecular-beam epitaxy and in situ angle-resolved photoemission spectroscopy. The lowest lying states are found to be comprised of Ti 3d_{xy} orbitals, analogous to the LaAlO3/SrTiO3 interface and exhibit unusually broad features characterized by quantized energy levels and a reduced Luttinger volume. Using model calculations, we explain these characteristics through an interplay of disorder and electron-phonon coupling acting cooperatively at similar energy scales, which provides a possible mechanism for explaining the low free carrier concentrations observed at various oxide heterostructures such as the LaAlO3/SrTiO3 interface.

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