Gas-lens effect in kW-class thin-disk lasers.

We unveil a gas-lens effect in kW-class thin-disk lasers, which accounts in our experiments for 33% of the overall disk thermal lensing. By operating the laser in vacuum, the gas lens vanishes. This leads to a lower overall thermal lensing and hence to a significantly extended power range of optimal beam quality. In our high-power continuous-wave (cw) thin-disk laser, we obtain single-transverse-mode operation, i.e. M2 < 1.1, in a helium or vacuum environment over an output-power range from 300 W to 800 W, which is 70% broader than in an air environment. In order to predict the magnitude of the gas-lens effect in different thin-disk laser systems and gain a deeper understanding of the effect of the heated gas in front of the disk, we develop a new numerical model. It takes into account the heat transfer between the thin disk and the surrounding gas and calculates the lensing effect of the heated gas. Using this model, we accurately reproduce our experimental results and additionally predict, for the first time by means of a theoretical tool, the existence of the known gas-wedge effect due to gas convection. The gas-lens and gas-wedge effects are relevant to all high-power thin-disk systems, both oscillators and amplifiers, operating in cw as well as pulsed mode. Specifically, canceling the gas-lens effect becomes crucial for kW power scaling of thin-disk oscillators because of the larger mode area on the disk and the resulting higher sensitivity to the disk thermal lens.

Extreme ultraviolet light source at a megahertz repetition rate based on high-harmonic generation inside a mode-locked thin-disk laser oscillator.

We demonstrate a compact extreme ultraviolet (XUV) source based on high-harmonic generation (HHG) driven directly inside the cavity of a mode-locked thin-disk laser oscillator. The laser is directly diode-pumped at a power of only 51 W and operates at a wavelength of 1034 nm and a 17.35 MHz repetition rate. We drive HHG in a high-pressure xenon gas jet with an intracavity peak intensity of 2.8×1013 W/cm2 and 320 W of intracavity average power. Despite the high-pressure gas jet, the laser operates at high stability. We detect harmonics up to the 17th order (60.8 nm, 20.4 eV) and estimate a flux of 2.6×108 photons/s for the 11th harmonic (94 nm, 13.2 eV). Due to the power scalability of the thin-disk concept, this class of compact XUV sources has the potential to become a versatile tool for areas such as attosecond science, XUV spectroscopy, and high-resolution imaging.

Peak-power scaling of femtosecond Yb:Lu2O3 thin-disk lasers.

We present a high-peak-power SESAM-modelocked thin-disk laser (TDL) based on the gain material Yb-doped lutetia (Yb:Lu2O3), which exceeds a peak-power of 10 MW for the first time. We generate pulses as short as 534 fs with an average power of 90 W and a peak power of 10.1 MW, and in addition a peak power as high as 12.3 MW with 616-fs pulses and 82-W average power. The center lasing wavelength is 1033 nm and the pulse repetition rates are around 10 MHz. We discuss and explain the current limitations with numerical models, which show that the current peak power is limited in soliton modelocking by the interplay of the gain bandwidth and the induced absorption in the SESAM with subsequent thermal lensing effects. We use our numerical model which is validated by the current experimental results to discuss a possible road map to scale the peak power into the 100-MW regime and at the same time reduce the pulse duration further to sub-200 fs. We consider Yb:Lu2O3 as currently the most promising gain material for the combination of high peak power and short pulse duration in the thin-disk-laser geometry.

Modelocking of a thin-disk laser with the frequency-doubling nonlinear-mirror technique.

We demonstrate a frequency-doubling nonlinear-mirror (NLM) modelocked thin-disk laser. This modelocking technique, composed of an intracavity second harmonic crystal in combination with a dichroic output coupler, offers robust operation decoupled from cavity stability (as in semiconductor saturable absorber mirror (SESAM) modelocking) combined with an ultrafast saturable loss and high modulation depth (as in Kerr-lens modelocking (KLM)). With our NLM diode-pumped Yb:YAG thin-disk laser we achieve 21 W of average power at 323-fs pulse duration, which is an order of magnitude shorter than the previously obtained duration with the same technique in bulk lasers. Using these first results, we present a theoretical model for the NLM technique, which accurately predicts its loss modulation properties and the shortest achievable pulse duration without relying on any fitting parameters. Based on this simulation, we expect that the NLM technique will enable thin-disk lasers with average power of more than 100 W, with potentially sub-200 fs pulses. This could potentially solve the pulse duration limitations with SESAM modelocked Yb:YAG thin-disk lasers without imposing strong cavity stability constraints such as in KLM.

High-power Yb:GGG thin-disk laser oscillator: first demonstration and power-scaling prospects.

We present the first demonstration of a thin-disk laser based on the gain material Yb:GGG. This material has many desirable properties for the thin-disk geometry: a high thermal conductivity, which is nearly independent of the doping concentration, a low quantum defect, low-temperature growth, and a broadband absorption spectrum, making it a promising contender to the well-established Yb:YAG for high-power applications. In continuous wave laser operation, we demonstrate output powers above 50 W, which is an order of magnitude higher than previously achieved with this material in the bulk geometry. We compare this performance with an Yb:YAG disk under identical pumping conditions and find comparable output characteristics (with typical optical-to-optical slope efficiencies >66%). Additionally, with the help of finite-element-method simulations, we show the advantageous heat-removal capabilities of Yb:GGG compared to Yb:YAG, resulting in >50% lower thermal lensing for thin Yb:GGG disks compared to Yb:YAG disks. The equivalent optical performance of the two crystals in combination with the easy growth and the significant thermal benefits of Yb:GGG show the large potential of future high-power thin-disk amplifiers and lasers based on this material, both for industrial and scientific applications.

Improved SESAMs for femtosecond pulse generation approaching the kW average power regime.

We present semiconductor saturable absorber mirrors (SESAMs) that can potentially support femtosecond pulses from ultrafast thin disk lasers (TDLs) with high average power approaching the kW-power level and high pulse energy in the range of 100 µJ to 1 mJ at megahertz pulse repetition rates. For high-power operation, the SESAM parameters will ultimately limit the shortest pulse duration from a soliton mode-locked laser before mode locking instabilities such as multiple pulsing instabilities and continuous wave (cw) breakthrough start to occur. Currently shorter pulses are prevented due to the inverse saturable absorption that becomes stronger with shorter pulses and results in a shift of the "rollover" of the nonlinear SESAM reflectivity towards lower fluences. Here we discuss a novel SESAM design that addresses these issues and can be grown by metal-organic vapor phase epitaxy (MOVPE), an attractive epitaxial growth technology for manufacturing.

Optimized SESAMs for kilowatt-level ultrafast lasers.

We present a thorough investigation of surface deformation and thermal properties of high-damage threshold large-area semiconductor saturable absorber mirrors (SESAMs) designed for kilowatt average power laser oscillators. We compare temperature rise, thermal lensing, and surface deformation of standard SESAM samples and substrate-removed SESAMs contacted using different techniques. We demonstrate that for all cases the thermal effects scale linearly with the absorbed power, but the contacting technique critically affects the strength of the temperature rise and the thermal lens of the SESAMs (i.e. the slope of the linear change). Our best SESAMs are fabricated using a novel substrate-transfer direct bonding technique and show excellent surface flatness (with non-measureable radii of curvature (ROC), compared to astigmatic ROCs of up to 10 m for standard SESAMs), order-of-magnitude improved heat removal, and negligible deformation with absorbed power. This is achieved without altering the saturation behavior or the recovery parameters of the samples. These SESAMs will be a key enabling component for the next generation of kilowatt-level ultrafast oscillators.

Crucial effect of melt homogenization on the fragility of non-stoichiometric chalcogenides.

The kinetics of homogenization of binary AsxSe100 - x melts in the As concentration range 0% < x < 50% are followed in Fourier Transform (FT)-Raman profiling experiments, and show that 2 g sized melts in the middle concentration range 20% < x < 30% take nearly two weeks to homogenize when starting materials are reacted at 700 °C. In glasses of proven homogeneity, we find molar volumes to vary non-monotonically with composition, and the fragility index M displays a broad global minimum in the 20% < x < 30% range of x wherein M < 20. We show that properly homogenized samples have a lower measured fragility when compared to larger under-reacted melts. The enthalpy of relaxation at Tg, ΔHnr(x) shows a minimum in the 27% < x < 37% range. The super-strong nature of melt compositions in the 20% < x < 30% range suppresses melt diffusion at high temperatures leading to the slow kinetics of melt homogenization.

Thin dielectric film thickness determination by advanced transmission electron microscopy.

High-resolution transmission electron microscopy (HR-TEM) has been used as the ultimate method of thickness measurement for thin films. The appearance of phase contrast interference patterns in HR-TEM images has long been confused as the appearance of a crystal lattice by nonspecialists. Relatively easy to interpret crystal lattice images are now directly observed with the introduction of annular dark-field detectors for scanning TEM (STEM). With the recent development of reliable lattice image processing software that creates crystal structure images from phase contrast data, HR-TEM can also provide crystal lattice images. The resolution of both methods has been steadily improved reaching now into the sub-Angstrom region. Improvements in electron lens and image analysis software are increasing the spatial resolution of both methods. Optimum resolution for STEM requires that the probe beam be highly localized. In STEM, beam localization is enhanced by selection of the correct aperture. When STEM measurement is done using a highly localized probe beam, HR-TEM and STEM measurement of the thickness of silicon oxynitride films agree within experimental error. In this article, the optimum conditions for HR-TEM and STEM measurement are discussed along with a method for repeatable film thickness determination. The impact of sample thickness is also discussed. The key result in this article is the proposal of a reproducible method for film thickness determination.

Crystal structures and solution behavior of paramagnetic divalent transition metal complexes (Fe, Co) of the sterically encumbered tridentate macrocycles 1,4,7-R3-1,4,7-triazacyclononane: coordination numbers 5 (R = i-Pr) and 6 (R = i-Bu).

The coordination chemistry of the sterically hindered macrocyclic triamines, 1,4,7-R3-1,4,7-triazacyclononane (R = i-Pr, i-Pr3tacn, and R = i-Bu, i-Bu3tacn) with divalent transition metals has been investigated. These ligands form a series of stable novel complexes with the triflate salts MII(CF3SO3)2 (M = Fe, Co, or Zn) under anaerobic conditions. The complexes Fe(i-Pr3tacn)(CF3SO3)2 (2), [Co(i-Pr3tacn)(SO3CF3)(H2O)](CF3SO3) (3), [Co(i-Pr3tacn)(CH3CN)2](BPh4)2 (4), Zn(i-Pr3tacn)(CF3SO3)2 (5), [Fe(i-Bu3tacn)(CH3CN)2(CF3SO3)](CF3SO3) (6), Fe(i-Bu3tacn)-(H2O)(CF3SO3)2 (7), and Co(i-Bu3tacn)(CF3SO3)2 (8) have been isolated. The behavior of these paramagnetic complexes in solution is explored by their 1H NMR spectra. The solid-state structures of four complexes have been determined by X-ray single-crystal crystallography. Crystallographic parameters are as follows. 2: C17H33F6FeN3O6S2, monoclinic, P2(1)/n, a = 10.895(1) A, b = 14.669(1) A, c = 16.617(1) A, beta = 101.37(1) degrees, Z = 4. 3: C17H35CoF6N3O7S2, monoclinic, P2(1)/c, a = 8.669(2) A, b = 25.538(3) A, c = 12.4349(12) A, beta = 103.132(13) degrees, Z = 4. 6: C24H45F6FeN5O6S2, monoclinic, P2(1)/c, a = 12.953(6) A, b = 16.780(6) A, c = 15.790(5) A, beta = 96.32(2) degrees, Z = 4. 7: C20H41F6FeN3O7S2, monoclinic, C2/c, a = 22.990(2) A, b = 15.768(2) A, c = 17.564(2) A, beta = 107.65(1) degrees, Z = 8. The ligand i-Pr3tacn leads to complexes in which the metal ions are five-coordinate, while it's isobutyl homologue affords six-coordinate complexes. This difference in the stereochemistries around the metal center is attributed to steric interactions involving the bulky alkyl appendages of the macrocycles.