Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films.

We report formation of aligned nanostructures on epitaxially grown polar and nonpolar GaN films via wet chemical (hot H3PO4 and KOH) etching. The morphological evolution exhibited stress relaxed faceted nanopyramids, flat/trigonal nanorods and porous structures with high hydrophilicity and reduced wettability. The nanostructured films divulged significant suppression of defects and displayed an enhanced intensity ratio of the near band edge emission to the defect band. Extensive photoemission analysis revealed variation in oxidation state along with elimination of OH- and adsorbed H2O molecules from the chemically modified surfaces. Fermi level pinning, and alteration in the surface polarity with substantial changes in the electron affinities were also perceived. The temperature dependent current-voltage analysis of the nanostructured surfaces displayed enhancement in current conduction. The in-depth analysis demonstrates that the chemically etched samples could potentially be utilized as templates in the design/growth of III-nitride based high performance devices.

Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE.

The relationship of the growth temperature with stress, defect states, and electronic structure of molecular beam epitaxy grown GaN films on c-plane (0001) sapphire substrates is demonstrated. A minimum compressively stressed GaN film is grown by tuning the growth temperature. The correlation of dislocations/defects with the stress relaxation is scrutinized by high-resolution X-ray diffraction and photoluminescence measurements which show a high crystalline quality with significant reduction in the threading dislocation density and defect related bands. A substantial reduction in yellow band related defect states is correlated with the stress relaxation in the grown film. Temperature dependent Raman analysis shows the thermal stability of the stress relaxed GaN film which further reveals a downshift in the E2 (high) phonon frequency owing to the thermal expansion of the lattice at elevated temperatures. Electronic structure analysis reveals that the Fermi level of the films is pinned at the respective defect states; however, for the stress relaxed film it is located at the charge neutrality level possessing the lowest electron affinity. The analysis demonstrates that the generated stress not only affects the defect states, but also the crystal quality, surface morphology and electronic structure/properties.

Faster response of NO2 sensing in graphene-WO3 nanocomposites.

Graphene-based nanocomposites have proven to be very promising materials for gas sensing applications. In this paper, we present a general approach for the preparation of graphene-WO(3) nanocomposites. Graphene-WO(3) nanocomposite thin-layer sensors were prepared by drop coating the dispersed solution onto the alumina substrate. These nanocomposites were used for the detection of NO(2) for the first time. TEM micrographs revealed that WO(3) nanoparticles were well distributed on graphene nanosheets. Three different compositions (0.2, 0.5 and 0.1 wt%) of graphene with WO(3) were used for the gas sensing measurements. It was observed that the sensor response to NO(2) increased nearly three times in the case of graphene-WO(3) nanocomposite layer as compared to a pure WO(3) layer at room temperature. The best response of the graphene-WO(3) nanocomposite was obtained at 250 °C.

Anomalous high pressure behaviour in nanosized rare earth sesquioxides.

We report Raman spectroscopic studies of the nanosized rare earth sesquioxides, namely yttrium sesquioxide (Y(2)O(3)), gadolinium sesquioxide (Gd(2)O(3)) and samarium sesquioxide (Sm(2)O(3)), under high pressure. The samples were characterized using x-ray diffraction, Raman spectroscopy and atomic force microscopy at atmospheric pressures. Y(2)O(3) and Gd(2)O(3) were found to be cubic at ambient, while Sm(2)O(3) was found to be predominantly cubic with a small fraction of monoclinic phase. The strongest Raman peaks are observed at 379, 344 and 363 cm(-1), respectively, for Y(2)O(3), Sm(2)O(3) and Gd(2)O(3). All the samples were found to be nanosized with 50-90 nm particle sizes. The high pressures were generated using a Mao-Bell type diamond anvil cell and a conventional laser Raman spectrometer is used to monitor the pressure-induced changes. Y(2)O(3) seems to undergo a crystalline to partial amorphous transition when pressurized up to about 19 GPa, with traces of hexagonal phase. However, on release of pressure, the hexagonal phase develops into the dominant phase. Gd(2)O(3) is also seen to develop into a mixture of amorphous and hexagonal phases on pressurizing. However, on release of pressure Gd(2)O(3) does not show any change and the transformation is found to be irreversible. On the other hand, Sm(2)O(3) shows a weakening of cubic phase peaks while monoclinic phase peaks gain intensity up to about a pressure of 6.79 GPa. However, thereafter the monoclinic phase peaks also reduce in intensity and mostly disordering sets in which does not show significant reversal as the pressure is released. The results obtained are discussed in detail.

Structural transition in nanostructured Eu2O3 under high pressures.

We report here studies on the effect of high pressure on the structural properties of nano-sized Europium sesquioxide (Eu2O3) up to a pressure of about 16.4 GPa. At ambient conditions, the starting sample was found to be predominantly cubic type Eu2O3 or in Eu3+ state with a trace of Eu2+. The presence of Eu2+ state is assumed to be arising due to the non-stoichiometric Eu(1-x)O phase which is obtained from XPS studies by the deconvolution of the Eu 3d-core levels. The Raman studies at ambient show a strong peak at about 333 cm(-1), which is known to occur due to the Fg mode of cubic Eu2O3 and in a similar way, the XRD data shows major peaks corresponding to the cubic phase of Eu2O3. A Mao-Bell type diamond anvil cell (DAC) was used to generate high pressures for XRD and Raman spectroscopy studies. It was observed that the material undergoes a structural change from cubic to monoclinic structure with an on set transition pressure at around 2 GPa and completes at around 8 GPa. This has been inferred from the fact that above about 2.0 GPa pressure, Raman studies show the emergence of a new peak corresponding to the monoclinic phase which increases in intensity and shifts further with increase in pressure, while the XRD studies show that above about 2.0 GPa, the peaks corresponding to monoclinic phase emerge, which show a slight increase in preferred orientation as the pressure is increased. A detailed discussion has been provided to explain this fact.