Correction to Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN.

[This corrects the article DOI: 10.1021/acsaem.2c01672.].

Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN.

Nowadays, making thermoelectric materials more efficient in energy conversion is still a challenge. In this work, to reduce the thermal conductivity and thus improve the overall thermoelectric performances, point and extended defects were generated in epitaxial 111-ScN thin films by implantation using argon ions. The films were investigated by structural, optical, electrical, and thermoelectric characterization methods. The results demonstrated that argon implantation leads to the formation of stable defects (up to 750 K operating temperature). These were identified as interstitial-type defect clusters and argon vacancy complexes. The insertion of these specific defects induces acceptor-type deep levels in the band gap, yielding a reduction in the free-carrier mobility. With a reduced electrical conductivity, the irradiated sample exhibited a higher Seebeck coefficient while maintaining the power factor of the film. The thermal conductivity is strongly reduced from 12 to 3 W·m-1·K-1 at 300 K, showing the influence of defects in increasing phonon scattering. Subsequent high-temperature annealing at 1573 K leads to the progressive evolution of these defects: the initial clusters of interstitials evolved to the benefit of smaller clusters and the formation of bubbles. Thus, the number of free carriers, the resistivity, and the Seebeck coefficient are almost restored but the mobility of the carriers remains low and a 30% drop in thermal conductivity is still effective (k total ∼ 8.5 W·m-1·K-1). This study shows that control defect engineering with defects introduced by irradiation using noble gases in a thermoelectric coating can be an attractive method to enhance the figure of merit of thermoelectric materials.

Imaging Thermoelectric Properties at the Nanoscale.

Based on our previous experimental AFM set-up specially designed for thermal conductivity measurements at the nanoscale, we have developed and validated a prototype which offers two major advantages. On the one hand, we can simultaneously detect various voltages, providing, at the same time, both thermal and electrical properties (thermal conductivity, electrical conductivity and Seebeck coefficient). On the other hand, the AFM approach enables sufficient spatial resolution to produce images of nanostructures such as nanowires (NWs). After a software and hardware validation, we show the consistency of the signals measured on a gold layer on a silicon substrate. Finally, we demonstrate that the imaging of Ge NWs can be achieved with the possibility to extract physical properties such as electrical conductivity and Seebeck coefficient, paving the way to a quantitative estimation of the figure of merit of nanostructures.

Si and Ge allotrope heterostructured nanowires: experimental evaluation of the thermal conductivity reduction.

We have studied the thermal conductivity of Ge and Si allotrope heterostructured nanowires (NWs) synthesized by phase transformation. The NWs are composed of successive hexagonal 2H and cubic diamond 3C crystal phases along the 〈111〉 axis. Using 3ω-scanning thermal microscopy on NWs embedded in a silica matrix, we present the first experimental evidence of thermal conductivity reduction in such allotrope 2H/3C heterostructured NWs. In Ge heterostructured 2H/3C NWs, similarly to homogeneous 3C NWs, we show a thermal conductivity reduction when the NW diameter decreases. In addition, in Si and Ge NWs, we observe a reduced thermal conductivity due to the heterostructuration 2H/3C. We evidence that the temperature of phase transformation, which influences the size and the number of 2H domains, can constitute an efficient parameter to tune the thermal conductivity.

Increased rise time of electron temperature during adiabatic plasmon focusing.

Decay of plasmons to hot carriers has recently attracted considerable interest for fundamental studies and applications in quantum plasmonics. Although plasmon-assisted hot carriers in metals have already enabled remarkable physical and chemical phenomena, much remains to be understood to engineer devices. Here, we present an analysis of the spatio-temporal dynamics of hot electrons in an emblematic plasmonic device, the adiabatic nanofocusing surface-plasmon taper. With femtosecond-resolution measurements, we confirm the extraordinary capability of plasmonic tapers to generate hot carriers by slowing down plasmons at the taper apex. The measurements also evidence a substantial increase of the "lifetime" of the electron gas temperature at the apex. This interesting effect is interpreted as resulting from an intricate heat flow at the apex. The ability to harness the "lifetime" of hot-carrier gases with nanoscale circuits may provide a multitude of applications, such as hot-spot management, nonequilibrium hot-carrier generation, sensing, and photovoltaics.

High-throughput heterodyne thermoreflectance: Application to thermal conductivity measurements of a Fe-Si-Ge thin film alloy library.

A High-Throughput Time-Domain ThermoReflectance (HT-TDTR) technique was developed to perform fast thermal conductivity measurements with minimum user actions required. This new setup is based on a heterodyne picosecond thermoreflectance system. The use of two different laser oscillators has been proven to reduce the acquisition time by two orders of magnitude and avoid the experimental artefacts usually induced by moving the elements present in TDTR systems. An amplitude modulation associated to a lock-in detection scheme is included to maintain a high sensitivity to thermal properties. We demonstrate the capabilities of the HT-TDTR setup to perform high-throughput thermal analysis by mapping thermal conductivity and interface resistances of a ternary thin film silicide library FexSiyGe100-x-y (20

Structurally-driven Enhancement of Thermoelectric Properties within Poly(3,4-ethylenedioxythiophene) thin Films.

UNLABELLED: Due to the rising need for clean energy, thermoelectricity has raised as a potential alternative to reduce dependence on fossil fuels. Specifically, thermoelectric devices based on polymers could offer an efficient path for near-room temperature energy harvesters. Thus, control over thermoelectric properties of conducting polymers is crucial and, herein, the structural, electrical and thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT) thin films doped with p-toluenesulfonate (Tos) molecules were investigated with regards to thin film processing. PEDOT: Tos thin films were prepared by in-situ polymerization of (3,4-ethylenedioxythiophene) monomers in presence of iron(III) p-toluenesulfonate with different co-solvents in order to tune the film structure. While the Seebeck coefficient remained constant, a large improvement in the electrical conductivity was observed for thin films processed with high boiling point additives. The increase of electrical conductivity was found to be solely in-plane mobility-driven. Probing the thin film structure by Grazing Incidence Wide Angle X-ray Scattering has shown that this behavior is dictated by the structural properties of the PEDOT: Tos films; specifically by the thin film crystallinity combined to the preferential edge-on orientation of the PEDOT crystallites. Consequentially enhancement of the power factor from 25 to 78.5 µW/mK(2) has been readily obtained for PEDOT: Tos thin films following this methodology.

Ultrafast amplifier additive timing jitter characterization and control.

We report on the characterization and long-term compensation of additive timing jitter introduced by a femtosecond ytterbium regenerative amplifier with a 100 kHz repetition rate. A balanced optical cross-correlation technique is used to generate a jitter error signal. This approach is well suited to characterize the additive timing jitter of Yb amplifiers seeded by narrow spectrum Yb oscillators. The balanced optical cross-correlator is in a noncollinear configuration allowing a background free coindence detection. This setup enables the measurement of additive timing jitter from the amplifier, with a noise floor of 300 as integrated from 10 Hz to 10 kHz. The measured additive timing jitter level is about 5 fs, integrated from 0.1 Hz to 10 kHz. The amplifier timing drift characterization and control are performed for more than an hour.

Titanium-based silicide quantum dot superlattices for thermoelectrics applications.

Ti-based silicide quantum dot superlattices (QDSLs) are grown by reduced-pressure chemical vapor deposition. They are made of titanium-based silicide nanodots scattered in an n-doped SiGe matrix. This is the first time that such nanostructured materials have been grown in both monocrystalline and polycrystalline QDSLs. We studied their crystallographic structures and chemical properties, as well as the size and the density of the quantum dots. The thermoelectric properties of the QDSLs are measured and compared to equivalent SiGe thin films to evaluate the influence of the nanodots. Our studies revealed an increase in their thermoelectric properties-specifically, up to a trifold increase in the power factor, with a decrease in the thermal conductivity-making them very good candidates for further thermoelectric applications in cooling or energy-harvesting fields.

Correction: Decrease in thermal conductivity in polymeric P3HT nanowires by size-reduction induced by crystal orientation: new approaches towards thermal transport engineering of organic materials.

Correction for 'Decrease in thermal conductivity in polymeric P3HT nanowires by size-reduction induced by crystal orientation: new approaches towards thermal transport engineering of organic materials' by Miguel Muñoz Rojo et al., Nanoscale, 2014, 6, 7858-7865.

Decrease in thermal conductivity in polymeric P3HT nanowires by size-reduction induced by crystal orientation: new approaches towards thermal transport engineering of organic materials.

To date, there is no experimental characterization of thermal conductivity of semiconductor polymeric individual nanowires embedded in a matrix. This work reports on scanning thermal microscopy measurements in a 3ω configuration to determine how the thermal conductivity of individual nanowires made of a model conjugated polymer (P3HT) is modified when decreasing their diameters. We observe a reduction of thermal conductivity, from λNW = 2.29 ± 0.15 W K(-1) m(-1) to λNW = 0.5 ± 0.24 W K(-1) m(-1), when the diameter of nanowires is reduced from 350 nm to 120 nm, which correlates with the polymer crystal orientation measured by WAXS. Through this work, the foundations for future polymer thermal transport engineering are presented.

Nanoscale block copolymer ordering induced by visible interferometric micropatterning: a route towards large scale block copolymer 2D crystals.

We have overcome the cost and time consumption limitations of common lithography techniques used to control the self-assembly of block copolymers into highly ordered 2D arrays through the use of a guiding pattern created from a polymeric sub-layer. The guiding pattern is a sinusoidal surface-relief grating interferometrically inscribed onto an azobenzene containing copolymer sub-layer leading to a defect-free single grain of block copolymer domains.

Thermal exchange radius measurement: application to nanowire thermal imaging.

In scanning thermal microscopy (SThM) techniques, the thermal exchange radius between tip and sample is a crucial parameter. Indeed, it limits the lateral spatial resolution but, in addition, an accurate value of this parameter is necessary for a precise identification of thermal properties. But until now, the thermal exchange radius is usually estimated but not measured. This paper presents an experimental procedure, based on the 3omega-SThM method, to measure its value. We apply this procedure to evaluate the thermal exchange radius of two commercial probes: the well-known Wollaston one and a new probe constituted of a palladium film on a SiO(2) substrate. Finally, presenting silicon nanowire images, we clearly demonstrate that this new probe can reach a spatial resolution better than 100 nm whereas the Wollaston probe hardly reaches a submicronic spatial resolution.

Measurement of thermally induced vibrations of microelectronic devices by use of a heterodyne electronic speckle pattern interferometry imaging technique.

An imaging technique to measure modulated surface displacements on microelectronic devices is presented. A device is supplied by a sinusoidal current that creates a modulated variation of temperature. To measure the induced normal surface displacement, we use an electronic speckle pattern interferometry setup in which we introduce a secondary modulation using an electro-optic modulator. To extract the displacement information, we then analyze the term atthe blinking frequency, which is equal tothe difference between the frequency of the surface displacement and the frequency of the secondary modulation. As the photodetector is a visible CC D camera, weapply heterodyne detection byusing a multichannel lock-in scheme. We have experimented with this new technique on a membrane to measure the amplitude of modulated surface displacement induced by the Joule effect.

Surface displacement imaging by interferometry with a light emitting diode.

We present an imaging technique to measure static surface displacements of electronic components. A device is supplied by a transient current that creates a variation of temperature, thus a surface displacement. To measure the latter, a setup that is based on a Michelson interferometer is used. To avoid the phenomenon of speckle and the drawbacks inherent to it, we use a light emitting diode as the light source for the interferometer. The detector is a visible CCD camera that analyzes the optical signal containing the information of surface displacement of the device. Combining images, we extract the amplitude of the surface displacement. Out-of-plane surface-displacement images of a thermoelectric device are presented.