Neurocognitive and Neurophysiological Functions Related to ACL Injury: A Framework for Neurocognitive Approaches in Rehabilitation and Return-to-Sports Tests.

CONTEXT: Only 55% of the athletes return to competitive sports after an anterior cruciate ligament (ACL) injury. Athletes younger than 25 years who return to sports have a second injury rate of 23%. There may be a mismatch between rehabilitation contents and the demands an athlete faces after returning to sports. Current return-to-sports (RTS) tests utilize closed and predictable motor skills; however, demands on the field are different. Neurocognitive functions are essential to manage dynamic sport situations and may fluctuate after peripheral injuries. Most RTS and rehabilitation paradigms appear to lack this aspect, which might be linked to increased risk of second injury. OBJECTIVE: This systematic and scoping review aims to map existing evidence about neurocognitive and neurophysiological functions in athletes, which could be linked to ACL injury in an integrated fashion and bring an extensive perspective to assessment and rehabilitation approaches. DATA SOURCES: PubMed and Cochrane databases were searched to identify relevant studies published between 2005 and 2020 using the keywords ACL, brain, cortical, neuroplasticity, cognitive, cognition, neurocognition, and athletes. STUDY SELECTION: Studies investigating either neurocognitive or neurophysiological functions in athletes and linking these to ACL injury regardless of their design and technique were included. STUDY DESIGN: Systematic review. LEVEL OF EVIDENCE: Level 3. DATA EXTRACTION: The demographic, temporal, neurological, and behavioral data revealing possible injury-related aspects were extracted and summarized. RESULTS: A total of 16 studies were included in this review. Deficits in different neurocognitive domains and changes in neurophysiological functions could be a predisposing risk factor for, or a consequence caused by, ACL injuries. CONCLUSION: Clinicians should view ACL injuries not only as a musculoskeletal but also as a neural lesion with neurocognitive and neurophysiological aspects. Rehabilitation and RTS paradigms should consider these changes for assessment and interventions after injury.

In-Memory-Computing Realization with a Photodiode/Memristor Based Vision Sensor.

State-of-the-art IoT technologies request novel design solutions in edge computing, resulting in even more portable and energy-efficient hardware for in-the-field processing tasks. Vision sensors, processors, and hardware accelerators are among the most demanding IoT applications. Resistance switching (RS) two-terminal devices are suitable for resistive RAMs (RRAM), a promising technology to realize storage class memories. Furthermore, due to their memristive nature, RRAMs are appropriate candidates for in-memory computing architectures. Recently, we demonstrated a CMOS compatible silicon nitride (SiNx) MIS RS device with memristive properties. In this paper, a report on a new photodiode-based vision sensor architecture with in-memory computing capability, relying on memristive device, is disclosed. In this context, the resistance switching dynamics of our memristive device were measured and a data-fitted behavioral model was extracted. SPICE simulations were made highlighting the in-memory computing capabilities of the proposed photodiode-one memristor pixel vision sensor. Finally, an integration and manufacturing perspective was discussed.

Impact of Line Edge Roughness on ReRAM Uniformity and Scaling.

We investigate the effects of Line Edge Roughness (LER) of electrode lines on the uniformity of Resistive Random Access Memory (ReRAM) device areas in cross-point architectures. To this end, a modeling approach is implemented based on the generation of 2D cross-point patterns with predefined and controlled LER and pattern parameters. The aim is to evaluate the significance of LER in the variability of device areas and their performances and to pinpoint the most critical parameters and conditions. It is found that conventional LER parameters may induce >10% area variability depending on pattern dimensions and cross edge/line correlations. Increased edge correlations in lines such as those that appeared in Double Patterning and Directed Self-assembly Lithography techniques lead to reduced area variability. Finally, a theoretical formula is derived to explain the numerical dependencies of the modeling method.

Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices.

By modification of the electrode-solid-electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta2 O5 /Pt is demonstrated, thus, bridging both mechanisms. The ECM operation is discussed in the light of Ta-cation mobility in TaOx . The crucial role of electrochemical processes and moisture in the resistive switching process is also highlighted.

Inert ambient annealing effect on MANOS capacitor memory characteristics.

In this work we report on the influence of nitrogen ambient thermal effects on the performance of Pt/Al2O3/Si3N4/SiO2/Si memory capacitors. Two post deposition annealing (PDA) furnace steps were employed, at 850 and 1050 °C both for 15 min. The alumina films were deposited by atomic layer deposition using TMA/H2O at 250 °C. The structural characteristics of the stacks were evaluated by transmission electron microscopy and x-ray reflectivity measurements. The memory performance of the stacks was evaluated by write/erase and erase/write measurements, endurance and retention testing. It was found that in as-deposited state the Al2O3 layer is defective resulting in strong leakage currents, controlled by deep defects states. Thus, this behavior inhibits the memory functionality of the stacks. PDA crystallizes and condenses the Al2O3 transforming the layer from amorphous to polycrystalline. During this transformation the Al2O3 electrical quality improves greatly indicating that a significant number of these deep defects have been removed during annealing. Physical reasoning implies that the most plausible origin of these deep defects is hydrogen. However, the polycrystalline Al2O3 films showed inferior retention characteristics which are attributed to grain boundary related shallow defects. The findings of this work could pave the way for more efficient annealing schemes, in which an important factor is the time interval for hydrogen out-diffusion from the Al2O3 layer.