Exciton-Driven and Layer-Independent Linear and Nonlinear Optical Properties in NbOCl2.

We investigate the electronic structure and linear and nonlinear [second-harmonic generation (SHG)] spectra of the NbOCl2 monolayer, bilayer, and bulk by using a real-time first-principles approach based on many-body theory. First, the interlayer couplings between NbOCl2 layers are very weak, due to the relatively large interlayer distance, saturation of the p orbital of Cl atoms, and high degree of localization of charge density around the Nb atom for both the lowest conduction band and the highest valence band. Second, the quasiparticle gaps and exciton binding energy for the three systems show layer-dependent features and decrease with an increase in layer thickness. Most importantly, the linear and SHG spectra of the NbOCl2 monolayer, bilayer, and bulk are dominated by strong excitonic resonances and exhibit layer-independent features due to the weak interlayer couplings. Our findings demonstrate that excitonic effects should be included in studying the optical properties of not only two-dimensional materials but also layered bulk materials with weak interlayer couplings.

Two-dimensional half-metals MSi2N4 (M = Al, Ga, In, Tl) with intrinsic p-type ferromagnetism and ultrawide bandgaps.

Intrinsic half-metallic nanomaterials with 100% spin polarization are highly demanded for next-generation spintronic devices. Here, by using first-principles calculations, we have designed a class of new two-dimensional (2D) p-type half-metals, MSi2N4 (M = Al, Ga, In and Tl), which show high mechanical, thermal and dynamic stabilities. MSi2N4 not only have ultrawide electronic bandgaps for spin-up channels in the range of 4.05 to 6.82 eV but also have large half-metallic gaps in the range of 0.75 to 1.47 eV, which are large enough to prevent the spin-flip transition. The calculated magnetic moment is 1 µB per cell, resulting from polarized N1-px/py orbitals. Moreover, MSi2N4 possess robust long-range ferromagnetic orderings with Curie temperatures in the range of 35-140 K, originating from the interplay of N1-M-N1 superexchange interactions. Furthermore, spin dependent electronic transport calculations reveal 100% spin polarization. Our results highlight new promising 2D ferromagnetic half-metals toward future spintronic applications.

Investigation of nonlinear optical properties in α-A2BB'O6 (A = Li, Na, K; B = Ti, Zr, Hf; B' = Se, Te) by first-principles calculations.

Nonlinear optical (NLO) crystals based on oxides typically have wide bandgaps and large laser damage thresholds (LDTs), which are important for generating high-power and continuous terahertz radiation. Recently, a new family of NLO materials α-A2BB'O6 including Li2TiTeO6 (LTTO) with a strong second harmonic generation (SHG) efficiency of 26 × KH2PO4 (KDP) and a large LDT of 550 MW cm-2 were reported. Herein, we systematically study the electronic structures and NLO properties of α-A2BB'O6 (A = Li, Na, K; B = Ti, Zr, Hf; B' = Se, Te) to explore the relationship between the structure and SHG coefficient. First, 15 members of the A2BB'O6 family are demonstrated to be highly stable and NLO materials, excluding K2TiTeO6, K2TiSeO6 and K2ZrSeO6. Then, the electronic band structure, dipole moment and distortion of BO6/B'O6 octahedrons, SHG coefficient and terahertz absorption spectrum are calculated comprehensively with the element variation of A-site, B-site and B'-site. Finally, the magnitude of the SHG coefficient is found to be directly proportional to the value of total dipole moment and distortion, and inversely proportional to the bandgap value. Most importantly, among the A2BB'O6 materials, K2HfSeO6 shows the smallest direct bandgap of 2.99 eV, the largest SHG coefficient d33 of about 5 × LTTO and low terahertz absorbance from 0.1 to 9 THz. Our results provide new NLO crystals that may have potential application in terahertz radiation sources and other nonlinear electronics.

Exploration of the origin of the excellent charge-carrier dynamics in Ruddlesden-Popper oxysulfide perovskite Y2Ti2O5S2.

Although the efficient separation of electron-hole (e-h) pairs is one of the most sought-after electronic characteristics of materials, due to thermally induced atomic motion and other factors, they do not remain separated during the carrier transport process, potentially leading to rapid carrier recombination. Here, we utilized real-time time-dependent density functional theory in combination with nonadiabatic molecular dynamics (NAMD) to explore the separated dynamic transport path within Ruddlesden-Popper oxysulfide perovskite Y2Ti2O5S2 caused by the dielectric layer and phonon frequency difference. The underlying origin of the efficient overall water splitting in Y2Ti2O5S2 is systematically explored. We report the existence of the bi-directional e-h separate-path transport, in which, the electrons transport in the Ti2O5 layer and the holes diffuse in the rock-salt layer. This is in contrast to the conventional e-h separated distribution with a crowded transport channel, as observed in SrTiO3 and hybrid perovskites. Such a unique feature finally results in a long carrier lifetime of 321 ns, larger than that in the SrTiO3 perovskite (160 ns) with only one carrier transport channel. This work provides insights into the carrier transport in lead-free perovskites and yields a novel design strategy for next-generation functionalized optoelectronic devices.

Theoretical Dissection of Cation-Deficient Layered Ruddlesden-Popper Oxysulfide Perovskites with a High-Efficiency Carrier Transport Channel.

The search for lead-free perovskite materials has triggered intensive interest. Here, we study the electronic structures and optical properties of cation-deficient Ruddlesden-Popper oxysulfide perovskites Ln2Ti2O5S2 (Ln = Sc, Y, or La), with a tunable band gap of 1.45-2.1 eV and a small exciton binding energy of ∼0.1 eV, among which Y2Ti2O5S2 has been synthesized experimentally. Sc2Ti2O5S2 possesses the largest light absorbance in the visible region. We further rationalize the light absorption via the transition dipole moment and suggest potential applications of Sc2Ti2O5S2 in solar cells and Y2Ti2O5S2 and La2Ti2O5S2 in water splitting. In addition, this family exhibits small effective masses within the x-y plane and large ones along the z direction. Most importantly, electron gas-like carrier behaviors are observed within the Ti-O bond region, offering a diffusion channel for electron transport. These findings greatly advance our understanding of lead-free perovskites and offer a novel material platform for future optoelectronic devices.

Understanding Trends in Electrochemical Methanol Oxidation Reaction Activity on a Single Transition-Metal Atom Embedded in N-Coordinated Graphene Catalysts.

The lack of efficient catalysts and research on the mechanism for the methanol oxidation reaction (MOR) impedes the development of direct methanol fuel cells. In this work, based on density functional theory calculations, we systematically investigated the activity trends of electrochemical MOR on a single transition-metal atom embedded in N-coordinated graphene (M@N4C). By calculating the free energy diagrams of MOR on M@N4C, Co@N4C was screened out to be the most effective MOR catalyst with a low limiting potential of 0.41 V due to the unique charge transfers and electronic structures. Importantly, one- and two-dimensional volcano relationships in MOR on M@N4C catalysts are established based on the d-band center and the Gibbs free energy of ΔG*CH3OH and ΔG*CO, respectively. In one word, this work provides theoretical guides toward the improved activity of MOR on M@N4C and hints for the design of active and efficient MOR electrocatalysts.

Layer-stacking of chalcogenide-terminated MXenes Ti2CT2(T = O, S, Se, Te) and their applications in metal-ion batteries.

Owning to limited supply of lithium for Li-ion batteries, the development of non-Li-ion batteries (such as Na+, K+Mg2+, Ca2+, and Al3+ion batteries) has attracted significant research interest. In this work, by means of the first-principles calculations, we systematically investigated the performance of chalcogenide-terminated MXenes Ti2CT2(T = O, S, Se, and Te) as electrodes for Li-ion and non-Li-ion batteries, as well as the layer-stacking and electronic properties of Ti2CT2. We find that the stacking type of O and Te terminated Ti2C multilayers with AA stacking differs from that of S and Se terminated Ti2C multilayers with AB stacking. More importantly, Ti2CO2monolayer can be potential anode material for Na- and K-ion batteries with high capacities and very low diffusion barriers (0.03-0.11 eV), while Ti2CS2and Ti2CSe2are promising anode materials with relatively low average open circuit voltages (OCVs) for Na-, K-, and Ca-ion batteries (0.4-0.87 V). Among these materials, Ti2CS2exhibits the largest ion capacity of 616 mAh g-1. These results of our work may inspire further studies of Ti2C-MXenes multilayers as electrodes for metal-ion batteries either experimentally or theoretically.

Tuning low-temperature CO oxidation activities via N-doping on graphene-supported three-coordinated nickle single-atom catalysts.

Nitrogen doping is identified as an intriguing way to regulate graphene-supported single-atom catalysts (SACs) for heterogeneous catalysis. However, little theoretical effort has been directed towards exploring the activity trend in terms of N-doping level. In this study, we systematically investigated the N-doping effect on CO oxidation activities for graphene-supported three-coordinated Ni SACs (Ni-NxC3-x) in virtue of density functional theory (DFT) calculations and microkinetic modeling. We found that N-doping will shift the d-band center of single-atom Ni upwards, enhance the adsorption of intermediates, and tune the activation barrier to the overall reaction activities. Ni-N1C2 exhibits excellent catalytic performance with the highest total reaction rate comparable to that of noble metal SACs. These findings are helpful for understanding the N-doping influence and rationalizing the art of designing novel SACs for CO oxidation at low temperatures.

Chimeric ferritin H in hybrid crucian carp exhibits a similar down-regulation in lipopolysaccharide-induced NF-κB inflammatory signal in comparison with Carassius cuvieri and Carassius auratus red var.

Ferritin H can participate in the regulation of teleostean immunity. ORF sequences of RCC/WCC/WR-ferritin H were 609 bp, while WR-ferritin H gene possessed chimeric fragments or offspring-specific mutations. In order to elucidate regulation of immune-related signal transduction, three fibroblast-like cell lines derived from caudal fin of red crucian carp (RCC), white crucian carp (WCC) and their hybrid offspring (WR) were characterized and designated as RCCFCs, WCCFCs and WRFCs. A sharp increase of ferritin H mRNA was observed in RCCFCs, WCCFCs and WRFCs following lipopolysaccharide (LPS) challenge. Overexpression of RCC/WCC/WR-ferritin H can decrease MyD88-IRAK4 signal and antagonize NF-κB, TNFα promoter activity in RCCFCs, WCCFCs and WRFCs, respectively. These results indicated that ferritin H in hybrid offspring harbors highly-conserved domains with a close sequence similarity to those of its parents, playing a regulatory role in inflammatory signals.

Many-body effects in an MXene Ti2CO2 monolayer modified by tensile strain: GW-BSE calculations.

MXenes, two-dimensional (2D) layered transition metal carbide/nitride materials with a lot of advantages including high carrier mobility, tunable band gap, favorable mechanical properties and excellent structural stability, have attracted research interest worldwide. It is imperative to accurately understand their electronic and optical properties. Here, the electronic and optical response properties of a Ti2CO2 monolayer, a typical member of MXenes, are investigated on the basis of first-principles calculations including many-body effects. Our results show that the pristine Ti2CO2 monolayer displays an indirect quasi-particle (QP) band gap of 1.32 eV with the conduction band minimum (CBM) located at the M point and valence band maximum (VBM) located at the Γ point. The optical band gap and binding energy of the first bright exciton are calculated to be 1.26 eV and 0.56 eV, respectively. Under biaxial tensile strains, the lowest unoccupied band at the Γ point shifts downward, while the lowest unoccupied band at the M point shifts upward. Then, a direct band gap appears at the Γ point in 6%-strained Ti2CO2. Moreover, the optical band gap and binding energy of the first bright exciton decrease continuously with the increase of the strain due to the increase of the lattice parameter and the expansion of the exciton wave function. More importantly, the absorbed photon flux of Ti2CO2 is calculated to be 1.76-1.67 mA cm-2 with the variation of the strain, suggesting good sunlight optical absorbance. Our work demonstrates that Ti2CO2, as well as other MXenes, hold untapped potential for photo-detection and photovoltaic applications.

Electronic properties and oxygen reduction reaction catalytic activity of h-BeN2 and MgN2 by first-principles calculations.

Currently, identifying suitable oxygen reduction reaction (ORR) catalysts in novel two-dimensional (2D) materials has attracted more and more research attention. Here, we have studied the catalytic activities of 2D h-BeN2 and MgN2 monolayers for ORR by using first-principles calculations. The calculated results reveal that the direct quasiparticle bandgap of BeN2 monolayer is 3.32 eV, and the indirect bandgap of MgN2 is 3.42 eV. 2D h-BeN2 and MgN2 exhibit high exciton binding energies of 1.07 and 0.83 eV respectively, and their optical properties are determined by bound exciton transitions due to the strong quantum confinement effects. Importantly, h-BeN2 and MgN2 monolayers with positive-charged (+1.6 e) metal atom (Be/Mg) on the surface exhibit excellent adsorption ability for O2 and ORR intermediates, and show better CO tolerance than Pt(111). The calculated free energy plots are always downhill for ORR catalyzed by BeN2 in both acid and alkaline environments, and by MgN2 in alkaline environments. The detailed reaction mechanism analyses show that high-efficient four-electron pathway is the optimal pathway for ORR catalyzed by BeN2 in acid environments. Surprisingly, there is a low overpotential of 0.45 eV for ORR catalyzed by BeN2 in the acid solution and no overpotential in the alkaline solution. Our studies found for the first time that 2D h-BeN2 shows huge potential as a non-precious metal ORR catalyst in acid and alkaline environments.

Enhancement of photoluminescence and hole mobility in 1- to 5-layer InSe due to the top valence-band inversion: strain effect.

Recently, two-dimensional (2D) few-layer InSe nanosheets have become one of the most interesting materials due to their excellent electron transport, wide bandgap tunability and good metal contact. However, their low photoluminescence (PL) efficiency and hole mobility seriously restrict their application in 2D InSe-based nano-devices. Here, by exerting a suitable compressive strain, a remarkable modification for the electronic structure and the optical and transport properties of 1- to 5-layer InSe has been confirmed by powerful GW-BSE calculations. Both top valence band inversion and indirect-to-direct bandgap transition are induced; the light polarization is reversed from E||c to E⊥c; and the PL intensity and hole mobility are enhanced greatly. Surprisingly, under 6% compressive strain, the light emission of monolayer InSe with E⊥c is allowed at 2.58 eV, which has never been observed previously. Meanwhile, for the 2D few-layer InSe, the PL with E⊥c polarization increases over 10 times in intensity and has a blue-shift at about 0.6-0.7 eV, and the hole mobility increases two orders of magnitude up to 103 cm2 V-1 s-1, as high as electron mobility. The strained few-layer InSe are thus a promising candidate for future 2D electronic and optoelectronic nano-devices.

Modulation of electronic and magnetic properties in InSe nanoribbons: edge effect.

Quite recently, the two-dimensional (2D) InSe nanosheet has become a hot material with great promise for advanced functional nano-devices. In this work, for the first time, we perform first-principles calculations on the structural, electronic, magnetic and transport properties of 1D InSe nanoribbons with/without hydrogen or halogen saturation. We find that armchair ribbons, with various edges and distortions, are all nonmagnetic semiconductors, with a direct bandgap of 1.3 (1.4) eV for bare (H-saturated) ribbons, and have the same high electron mobility of about 103 cm2V-1s-1 as the 2D InSe nanosheet. Zigzag InSe nanoribbons exhibit metallic behavior and diverse intrinsic ferromagnetic properties, with the magnetic moment of 0.5-0.7 µ B per unit cell, especially for their single-edge spin polarization. The edge spin orientation, mainly dominated by the unpaired electrons of the edge atoms, depends sensitively on the edge chirality. Hydrogen or halogen saturation can effectively recover the structural distortion, and modulate the electronic and magnetic properties. The binding energy calculations show that the stability of InSe nanoribbons is analogous to that of graphene and better than in 2D InSe nanosheets. These InSe nanoribbons, with novel electronic and magnetic properties, are thus very promising for use in electronic, spintronic and magnetoresistive nano-devices.

K-Λ crossover transition in the conduction band of monolayer MoS2 under hydrostatic pressure.

Monolayer MoS2 is a promising material for optoelectronics applications owing to its direct bandgap, enhanced Coulomb interaction, strong spin-orbit coupling, unique valley pseudospin degree of freedom, etc. It can also be implemented for novel spintronics and valleytronics devices at atomic scale. The band structure of monolayer MoS2 is well known to have a direct gap at K (K') point, whereas the second lowest conduction band minimum is located at Λ point, which may interact with the valence band maximum at K point, to make an indirect optical bandgap transition. We experimentally demonstrate the direct-to-indirect bandgap transition by measuring the photoluminescence spectra of monolayer MoS2 under hydrostatic pressure at room temperature. With increasing pressure, the direct transition shifts at a rate of 49.4 meV/GPa, whereas the indirect transition shifts at a rate of -15.3 meV/GPa. We experimentally extract the critical transition point at the pressure of 1.9 GPa, in agreement with first-principles calculations. Combining our experimental observation with first-principles calculations, we confirm that this transition is caused by the K-Λ crossover in the conduction band.

Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure.

To enhance the low hole mobility (∼40 cm2 V-1 s-1) of InSe monolayer, a novel two-dimensional (2D) van der Waals heterostructure made of InSe and black phosphorus (BP) monolayers with high hole mobility (∼103 cm2 V-1 s-1) has been constructed and its structural and electronic properties are investigated using first-principles calculations. We find that the InSe/BP heterostructure exhibits a direct band gap of 1.39 eV and type-II band alignment with electrons (holes) located in the InSe (BP) layer. The band offsets of InSe and BP are 0.78 eV for the conduction band minimum and 0.86 eV for the valence band maximum, respectively. Surprisingly, the hole mobility in the InSe/BP heterostructure exceeds 104 cm2 V-1 s-1, which is one order of magnitude larger than the hole mobility of BP and three orders larger than that of the InSe monolayer. The electron mobility is also increased to 3 × 103 cm2 V-1 s-1. The physical reason has been analyzed deeply, and a universal method is proposed to improve the carrier mobility of 2D materials by forming heterostructures with them and other 2D materials with complementary properties. The InSe/BP heterostructure can thus be widely used in nanoscale InSe-based field-effect transistors, photodetectors and photovoltaic devices due to its type-II band alignment and high carrier mobility.

Anomalous Light Emission and Wide Photoluminescence Spectra in Graphene Quantum Dot: Quantum Confinement from Edge Microstructure.

The physical origin of the observed anomalous photoluminescence (PL) behavior, that is, the large-size graphene quantum dots (GQDs) exhibiting higher PL energy than the small ones and the broadening PL spectra from deep ultraviolet to near-infrared, has been debated for many years. Obviously, it is in conflict with the well-accepted quantum confinement. Here we shed new light on these two notable debates by state-of-the-art first-principles calculations based on many-body perturbation theory. We find that quantum confinement is significant in GQDs with remarkable size-dependent exciton absorption/emission. The edge environment from alkaline to acidic conditions causes a blue shift of the PL peak. Furthermore, carbon vacancies are inclined to assemble at the GQD edge and form the tiny edge microstructures. The bound excitons, localized inside these edge microstructures, determine the anomalous PL behavior (blue and UV emission) of large-size GQDs. The bound excitons confined in the whole GQD lead to the low-energy transition.

Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect.

The physical origin of the strong emission line at 3.45 eV and broadening yellow luminescence (YL) band centered at 2.2 eV in GaN nanowire (NW) has been debated for many years. Here, we solve these two notable issues by using state-of-the-art first-principles calculations based on many-body perturbation theory combined with polarization-resolved experiments. We demonstrate that the ubiquitous surface "microwires" with amazing characteristics, i.e., the outgrowth nanocrystal along the NW side wall, are vital and offer a new perspective to provide insight into some puzzles in epitaxy materials. Furthermore, inversion of the top valence bands, in the decreasing order of crystal-field split-off hole (CH) and heavy/light hole, results in the optical transition polarized along the NW axis due to quantum confinement. The optical emission from bound excitons localized around the surface microwire to CH band is responsible for the 3.45 eV line with E∥c polarization. Both gallium vacancy and carbon-related defects tend to assemble at the NW surface layer, determining the broadening YL band.

Reducing Mg acceptor activation-energy in Al(0.83)Ga(0.17)N disorder alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice using Mg(Ga) δ-doping: Mg local-structure effect.

Improving p-type doping efficiency in Al-rich AlGaN alloys is a worldwide problem for the realization of AlGaN-based deep ultraviolet optoelectronic devices. In order to solve this problem, we calculate Mg acceptor activation energy and investigate its relationship with Mg local structure in nanoscale (AlN)5/(GaN)1 superlattice (SL), a substitution for Al(0.83)Ga(0.17)N disorder alloy, using first-principles calculations. A universal picture to reduce acceptor activation energy in wide-gap semiconductors is given for the first time. By reducing the volume of the acceptor local structure slightly, its activation energy can be decreased remarkably. Our results show that Mg acceptor activation energy can be reduced significantly from 0.44 eV in Al(0.83)Ga(0.17)N disorder alloy to 0.26 eV, very close to the Mg acceptor activation energy in GaN, and a high hole concentration in the order of 10(19) cm(-3) can be obtained in (AlN)5/(GaN)1 SL by Mg(Ga) δ-doping owing to GaN-monolayer modulation. We thus open up a new way to reduce Mg acceptor activation energy and increase hole concentration in Al-rich AlGaN.