UV-Nanoimprint Lithography for Predefined SERS Nanopatterns Which Are Reproducible at Low Cost and High Throughput.

A controlled and reliable nanostructured metallic substrate is a prerequisite for developing effective surface-enhanced Raman scattering (SERS) spectroscopy techniques. In this study, we present a novel SERS platform fabricated using ultra-violet nanoimprint lithography (UV-NIL) to produce large-area, ordered nanostructured arrays. By using UV-NIL imprinted patterns in resist, we were able to overcome the main limitations present in most common SERS platforms, such as nonuniformity, nonreproducibility, low throughput, and high cost. We simulated and fabricated C-shaped plasmonic nanostructures that exhibit high signal enhancement at an excitation wavelength of 785 nm. The substrates were fabricated by directly coating the imprinted resist with a thin gold layer. Avoiding the need to etch patterns in silicon significantly reduces the time and cost of fabrication and facilitates reproducibility. The functionality of the substrates for SERS detection was validated by measuring the SERS spectra of Rhodamine 6G.

UV-Nanoimprint and Deep Reactive Ion Etching of High Efficiency Silicon Metalenses: High Throughput at Low Cost with Excellent Resolution and Repeatability.

As metasurfaces begin to find industrial applications there is a need to develop scalable and cost-effective fabrication techniques which offer sub-100 nm resolution while providing high throughput and large area patterning. Here we demonstrate the use of UV-Nanoimprint Lithography and Deep Reactive Ion Etching (Bosch and Cryogenic) towards this goal. Robust processes are described for the fabrication of silicon rectangular pillars of high pattern fidelity. To demonstrate the quality of the structures, metasurface lenses, which demonstrate diffraction limited focusing and close to theoretical efficiency for NIR wavelengths λ ∈ (1.3 µm, 1.6 µm), are fabricated. We demonstrate a process which removes the characteristic sidewall surface roughness of the Bosch process, allowing for smooth 90-degree vertical sidewalls. We also demonstrate that the optical performance of the metasurface lenses is not affected adversely in the case of Bosch sidewall surface roughness with 45 nm indentations (or scallops). Next steps of development are defined for achieving full wafer coverage.

MEMS-tunable dielectric metasurface lens using thin-film PZT for large displacements at low voltages.

Tunable focusing is a desired property in a wide range of optical imaging and sensing technologies but has tended to require bulky components that cannot be integrated on-chip and have slow actuation speeds. Recently, integration of metasurfaces into electrostatic micro-electromechanical system (MEMS) architectures has shown potential to overcome these challenges but has offered limited out-of-plane displacement range while requiring large voltages. We demonstrate for the first time, to the best of our knowledge, a movable metasurface lens actuated by integrated thin-film PZT MEMS, which has the advantage of offering large displacements at low voltages. An out-of-plane displacement of a metasurface in the range of 7.2 µm is demonstrated under a voltage application of 23 V. This is roughly twice the displacement at a quarter of the voltage of state of the art electrostatic out-of-plane actuation of metasurfaces. Using this tunability, we demonstrate a varifocal lens doublet with a focal shift of the order of 250 µm at the wavelength 1.55 µm. The thin-film PZT MEMS-metasurface is a promising platform for miniaturized varifocal components.

Metasurface Fabrication by Cryogenic and Bosch Deep Reactive Ion Etching.

The research field of metasurfaces has attracted considerable attention in recent years due to its high potential to achieve flat, ultrathin optical devices of high performance. Metasurfaces, consisting of artificial patterns of subwavelength dimensions, often require fabrication techniques with high aspect ratios (HARs). Bosch and Cryogenic methods are the best etching candidates of industrial relevance towards the fabrication of these nanostructures. In this paper, we present the fabrication of Silicon (Si) metalenses by the UV-Nanoimprint Lithography method and cryogenic Deep Reactive Ion Etching (DRIE) process and compare the results with the same structures manufactured by Bosch DRIE both in terms of technological achievements and lens efficiencies. The Cryo- and Bosch-etched lenses attain efficiencies of around 39% at wavelength λ = 1.50 µm and λ = 1.45 µm against a theoretical level of around 61% (for Si pillars on a Si substrate), respectively, and process modifications are suggested towards raising the efficiencies further. Our results indicate that some sidewall surface roughness of the Bosch DRIE is acceptable in metalense fabrication, as even significant sidewall surface roughness in a non-optimized Bosch process yields reasonable efficiency levels.

Towards high-throughput large-area metalens fabrication using UV-nanoimprint lithography and Bosch deep reactive ion etching.

We demonstrate the fabrication of diffraction-limited dielectric metasurface lenses for NIR by the use of standard industrial high-throughput silicon processing techniques: UV nano imprint lithography (UV-NIL) combined with continuous reactive ion etching (RIE) and pulsed Bosch deep reactive ion etching (DRIE). As the research field of metasurfaces moves towards applications, these techniques are relevant as potential replacements of commonly used cost-intensive fabrication methods utilizing electron beam ithography. We show that washboard-type sidewall surface roughness arising from the Bosch DRIE process can be compensated for in the design of the metasurface, without deteriorating lens quality. Particular attention is given to fabrication challenges that must be overcome towards high-throughput production of relevance to commercial applications. Lens efficiencies are measured to be 25.5% and 29.2% at wavelengths λ = 1.55µm and λ = 1.31µm, respectively. A number of routes towards process optimization are proposed in relation to encountered challenges.