ABSTRACT
We report on the resistive switching in TiN/Ti/HfO2/TiN memristive devices. A resistive switching model for the device is proposed, taking into account important experimental and theoretical findings. The proposed switching model is validated using 2D and 3D kinetic Monte Carlo simulation models. The models are consistently coupled to the electric field and different current transport mechanisms such as direct tunneling, trap-assisted tunneling, ohmic transport, and transport through a quantum point contact have been considered. We find that the numerical results are in excellent agreement with experimentally obtained data. Important device parameters, which are difficult or impossible to measure in experiments, are calculated. This includes the shape of the conductive filament, width of filament constriction, current density, and temperature distribution. To obtain insights in the operation of the device, consecutive cycles have been simulated. Furthermore, the switching kinetics for the forming and set process for different applied voltages is investigated. Finally, the influence of an annealing process on the filament growth, especially on the filament growth direction, is discussed.
ABSTRACT
In this work we report on the role of ion transport for the dynamic behavior of a double barrier quantum mechanical Al/Al2O3/NbxOy/Au memristive device based on numerical simulations in conjunction with experimental measurements. The device consists of an ultra-thin NbxOy solid state electrolyte between an Al2O3 tunnel barrier and a semiconductor metal interface at an Au electrode. It is shown that the device provides a number of interesting features such as an intrinsic current compliance, a relatively long retention time, and no need for an initialization step. Therefore, it is particularly attractive for applications in highly dense random access memories or neuromorphic mixed signal circuits. However, the underlying physical mechanisms of the resistive switching are still not completely understood yet. To investigate the interplay between the current transport mechanisms and the inner atomistic device structure a lumped element circuit model is consistently coupled with 3D kinetic Monte Carlo model for the ion transport. The simulation results indicate that the drift of charged point defects within the NbxOy is the key factor for the resistive switching behavior. It is shown in detail that the diffusion of oxygen modifies the local electronic interface states resulting in a change of the interface properties.
