Analysis of etching mechanism and etched slope control of silicon for nanoimprinting lithography.

In the nanoimprint lithography (NIL) process, profile control of imprint masters is a very important task. Therefore, we attempted to control the etched slope of imprint masters as a function of adding O2 to CF4 plasma. Etched profile mechanisms and relationships between the etch kinetics and plasma chemistry were explored using zero-dimensional-based modeling. O2 flow rate increased to 24 sccm, the Si etch rate increased in the range of 186-393 nm/min, while the etch rate rapidly decreased as the O2 flow rate increases beyond 24 sccm. Meanwhile, change in the etch rate of SiO2 followed a similar tendency as the etch rate of Si as a function of O2 flow rate in the CF4/O2 mixing gases. The Si and SiO2 etch rate were expected to be closely dependent on the F radical intensity in CF4/O2 mixing gases. Moreover, the results of simulated normalized lateral etch critical dimension (NLECD) are in agreement with the measured NLECD as a function of O2 flow rate in the CF4/O2 mixing gases.

Study of energy transfer from excited TPD to Alq in organic electroluminescent devices by time-resolved fluorescence spectroscopy using a scanning near-field optical atomic force microscope.

We demonstrate the direct measurement of molecular diffusion at organic/organic interfaces of organic electroluminescence devices by use of a scanning near-field optical atomic force microscope. Our preliminary study shows that the degradation of an electroluminescence device is partly caused by crystallization of the organic layers. Because the initial stage of degradation cannot be observed by microscopic methods, nanoscale optical properties of the interface in multilayer systems are currently receiving a great deal of attention. Defects of organic electroluminescence devices were investigated using a scanning near-field optical atomic force microscope. This instrument is capable of measuring both a topographic and a fluorescence image at the same time. The defect area and other areas are clearly observed and time-resolved near-field fluorescence spectra demonstrate emission of the different species. These results suggest that defects occur at the organic solid interface, and that energy transfer occurs from excited TPD, as donor, to Alq, as acceptor.