Three-dimensional high-resolution anorectal manometry: cut-off values for diagnosis of dyssynergic defecation in children.

OBJECTIVE: Dyssynergic defecation (DD) may be one of the most important causes of constipation, but its diagnostic criteria have not been formally validated in children. This study aims to evaluate constipated children with 3DHRAM (three-dimensional high-resolution anorectal manometry) and determine a new pediatric cut-off for DD variables. PATIENTS AND METHODS: 205 patients diagnosed with functional constipation (FC) based on Rome III criteria were prospectively enrolled. Data were compared to a historical control group (C). Initially, the diagnosis of DD was based on adult criteria and divided into 4 types. A new cut-off value for percent anal relaxation was determined based on ROC curve analysis. RESULTS: The FC group presented significantly lower values of percent anal relaxation during straining compared to the C group (9.5% vs. 20%, respectively, p=0.03). Based on adult criteria, DD was found in 53% of the FC group and 46% of the C group (p=0.3), with type II occurring most frequently (35.8%). New cut-off value of 31% for percent anal relaxation in children was derived based on the ROC curve analysis. Based on this new cut-off value, DD was diagnosed in 69.3% of constipated children, with type IV occurring most frequently (28.9%). The analysis of segmental pressure showed significant influence of segments at the locations of the puborectalis muscle and external anal sphincter. CONCLUSIONS: We found that during bear down maneuver the percent anal relaxation variable significantly differed between patients and controls. The higher cut-off value should be used when 3DHRAM and the standard four-type classification are used to diagnose DD in children.

Quantitative determination of spin-orbit-induced magnetic field in GaMnAs by field-scan planar Hall measurements.

Spin-orbit-induced (SOI) effective magnetic field in GaMnAs film with in-plane magnetic anisotropy has been investigated by planar Hall effect measurements. The presence of SOI field was identified by a shift between planar Hall resistance (PHR) hystereses observed with positive and negative currents. The difference of switching fields occurring between the two current polarities, which is determined by the strength of the SOI field, is shown to depend on the external field direction. In this paper we have developed a method for obtaining the magnitude of the SOI fields based on magnetic free energy that includes the effects of magnetic anisotropy and the SOI field. Using this approach, the SOI field for a given current density was accurately obtained by fitting to the observed dependence of the switching fields on the applied field directions. Values of the SOI field obtained with field scan PHR measurements give results that are consistent with those obtained by analyzing the angular dependence of PHR, indicating the reliability of the field scan PHR method for quantifying the SOI-field in GaMnAs films. The magnitude of the SOI field systematically increases with increasing current density, demonstrating the usefulness of SOI fields for manipulation of magnetization by current in GaMnAs films.

Exchange bias in ferromagnetic bilayers with orthogonal anisotropies: the case of GaMnAsP/GaMnAs combination.

We report the observation of exchange bias in a ferromagnetic Ga0.94Mn0.06As0.77P0.23/ Ga0.94Mn0.06As bilayer, in which the easy axis in one layer is oriented out-of-plane, and in the other in-plane. Magnetization reversal in this system is explored using planar Hall effect (PHE) measurements under various initial conditions and with various field-cooling orientations. Our results show that the two magnetic layers are ferromagnetically exchange-coupled, and that such coupling results in pronounced exchange-bias-like shifts of magnetic hysteresis loops during reversal of in-plane magnetization. The presence of exchange bias in this system can be understood on the basis of magnetic closure domains formed in the layer with the out-of-plane easy axis.

Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy.

We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.

Ultrafast manipulation of topologically enhanced surface transport driven by mid-infrared and terahertz pulses in Bi2Se3.

Topology-protected surface transport of ultimate thinness in three-dimensional topological insulators (TIs) is breaking new ground in quantum science and technology. Yet a challenge remains on how to disentangle and selectively control surface helical spin transport from the bulk contribution. Here we use the mid-infrared and terahertz (THz) photoexcitation of exclusive intraband transitions to enable ultrafast manipulation of surface THz conductivity in Bi2Se3. The unique, transient electronic state is characterized by frequency-dependent carrier relaxations that directly distinguish the faster surface channel than the bulk with no complication from interband excitations or need for reduced bulk doping. We determine the topological enhancement ratio between bulk and surface scattering rates, i.e., γBS/γSS ~3.80 in equilibrium. The ultra-broadband, wavelength-selective pumping may be applied to emerging topological semimetals for separation and control of the protected transport connected with the Weyl nodes from other bulk bands.

Magnetization reversal and interlayer exchange coupling in ferromagnetic metal/semiconductor Fe/GaMnAs hybrid bilayers.

We report a detailed study of magnetization reversal in Fe/GaMnAs bilayers carried out by magnetotransport measurements. Specifically, we have used planar Hall resistance (PHR), which is highly sensitive to the direction of magnetization, and is therefore ideally suited for tracking magnetization as it reorients between successive easy axes in the two magnetic layers during reversal. These reorientations take place separately in the two magnetic layers, resulting in a series of different magnetization alignments (parallel or orthogonal) during reversal, providing a series of stable PHR states. Our results indicate that the magnetic anisotropy of the structure is dominated by cubic symmetry of both layers, showing two in-plane easy axes, but with significantly different energy barriers between the easy orientations. Importantly, a careful analysis of the PHR results has also revealed the presence of strong ferromagnetic interlayer exchange coupling (IEC) between the two magnetic layers, indicating that although magnetization reorients separately in each layer, this process is not independent, since the behavior of one layer is influenced by its adjacent magnetic neighbor. The ability to design and realize multiple PHR states, as observed in this investigation, shows promise for engineering Fe/GaMnAs bilayer structures for multinary magnetic memory devices and related multinary logic elements.

Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance.

Magnetization reversal in a GaMnAs trilayer system consisting of two GaMnAs layers separated by a Be-doped GaAs spacer was investigated by magnetotransport measurements. The rotation of magnetization in the two GaMnAs layers is observed as two abrupt independent transitions in planar Hall resistance (PHR). Interestingly, one GaMnAs layer manifests a positive change in PHR, while the other layer shows a negative change for the same rotation of magnetization. Such opposite behavior of the two layers indicates that anisotropic magnetoresistance (AMR) has opposite signs in the two GaMnAs layers. Owing to this opposite behavior of AMR, we are able to identify the sequence of magnetic alignments in the two GaMnAs layers during magnetization reversal. The PHR signal can then be decomposed into two independent contributions, which reveal that the magnetic anisotropy of the GaMnAs layer with negative AMR is predominantly cubic, while it is predominantly uniaxial in the layer with positive AMR. This investigation suggests the ability of engineering the sign of AMR in GaMnAs multilayers, thus making it possible to obtain structures with multi-valued PHR, that can be used as multinary magnetic memory devices.

Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes.

We discuss the use of planar Hall effect (PHE) in a ferromagnetic GaMnAs film with two in-plane easy axes as a means for achieving novel logic functionalities. We show that the switching of magnetization between the easy axes in a GaMnAs film depends strongly on the magnitude of the current flowing through the film due to thermal effects that modify its magnetic anisotropy. Planar Hall resistance in a GaMnAs film with two in-plane easy axes shows well-defined maxima and minima that can serve as two binary logic states. By choosing appropriate magnitudes of the input current for the GaMnAs Hall device, magnetic logic functions can then be achieved. Specifically, non-volatile logic functionalities such as AND, OR, NAND, and NOR gates can be obtained in such a device by selecting appropriate initial conditions. These results, involving a simple PHE device, hold promise for realizing programmable logic elements in magnetic electronics.

Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band.

The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bearing on its Curie temperature T(C). It is vigorously debated, however, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band. Here we combine results of channelling experiments, which measure the concentrations both of Mn ions and of holes relevant to the ferromagnetic order, with magnetization, transport, and magneto-optical data to address this issue. Taken together, these measurements provide strong evidence that it is the location of the Fermi level within the impurity band that determines T(C) through determining the degree of hole localization. This finding differs drastically from the often accepted view that T(C) is controlled by valence band holes, thus opening new avenues for achieving higher values of T(C).

Origin of magnetic circular dichroism in GaMnAs: giant zeeman splitting versus spin dependent density of states.

We present a unified interpretation of experimentally observed magnetic circular dichroism (MCD) in the ferromagnetic semiconductor (Ga,Mn)As, based on theoretical arguments, which demonstrates that MCD in this material arises primarily from a difference in the density of spin-up and spin-down states in the valence band brought about by the presence of the Mn impurity band, rather than being primarily due to the Zeeman splitting of electronic states.

Magnetic scattering of spin polarized carriers in (In, Mn)Sb dilute magnetic semiconductor.

Magnetoresistance measurements on the magnetic semiconductor (In, Mn)Sb suggest that magnetic scattering in this material is dominated by isolated Mn2+ ions located outside the ferromagnetically ordered regions when the system is below T(c). A model is proposed, based on the p-d exchange between spin-polarized charge carriers and localized Mn2+ ions, which accounts for the observed behavior both below and above the ferromagnetic phase transition. The suggested picture is further verified by high-pressure experiments, in which the degree of magnetic interaction can be varied in a controlled way.

Monitoring statistical magnetic fluctuations on the nanometer scale.

Statistical fluctuations of the magnetization are measured on the nanometer scale. As the experimental monitor we use the characteristic photoluminescence signal of a single electron-hole pair confined in one magnetic semiconductor quantum dot, which sensitively depends on the alignment of the magnetic ion spins. Quantitative access to statistical magnetic fluctuations is obtained by analyzing the linewidth broadening of the single dot emission. Our all-optical technique allows us to address a magnetic moment of only approximately equal 100 micro(B) and to resolve statistical changes on the order of a few micro(B).

Dynamical spin response in semimagnetic quantum dots.

The dynamical response of a paramagnetic spin system to the exchange field of quasi-zero-dimensional electron-hole pairs in semiconductor quantum dots is investigated by time-resolved spectroscopy. The spin response time is extracted from the transient spectral shift of the photoluminescence signal caused by the dynamical spin alignment of magnetic ions incorporated in the crystal matrix. The formation of this ferromagnetically aligned spin complex is demonstrated to be surprisingly stable as compared to bulk systems, even at elevated temperatures and high external magnetic fields.

Evidence for 2D precursors and interdiffusion in the evolution of self-assembled CdSe quantum dots on ZnSe

The evolution of self-assembled CdSe quantum dots deposited on (and subsequently capped by) ZnSe was investigated on a series of samples grown by molecular beam epitaxy, with CdSe coverages from 0.5 to 2.6 monolayers. The samples were investigated by cross-sectional scanning transmission electron microscopy, as well as macro- and microphotoluminescence. The results clearly indicated a coexistence of 2D ZnCdSe platelets and 3D islands, showing clearly that the platelets act as precursors for the formation of the 3D islands.