Engineering Graphene Phototransistors for High Dynamic Range Applications.

Phototransistors are light-sensitive devices featuring a high dynamic range, low-light detection, and mechanisms to adapt to different ambient light conditions. These features are of interest for bioinspired applications such as artificial and restored vision. In this work, we report on a graphene-based phototransistor exploiting the photogating effect that features picowatt- to microwatt-level photodetection, a dynamic range covering six orders of magnitude from 7 to 107 lux, and a responsivity of up to 4.7 × 103 A/W. The proposed device offers the highest dynamic range and lowest optical power detected compared to the state of the art in interfacial photogating and further operates air stably. These results have been achieved by a combination of multiple developments. For example, by optimizing the geometry of our devices with respect to the graphene channel aspect ratio and by introducing a semitransparent top-gate electrode, we report a factor 20-30 improvement in responsivity over unoptimized reference devices. Furthermore, we use a built-in dynamic range compression based on a partial logarithmic optical power dependence in combination with control of responsivity. These features enable adaptation to changing lighting conditions and support high dynamic range operation, similar to what is known in human visual perception. The enhanced performance of our devices therefore holds potential for bioinspired applications, such as retinal implants.

Broadband Tunable Infrared Light Emission from Metal-Oxide-Semiconductor Tunnel Junctions in Silicon Photonics.

Broadband near-infrared light emitting tunnel junctions are demonstrated with efficient coupling to a silicon photonic waveguide. The metal oxide semiconductor devices show long hybrid photonic-plasmonic mode propagation lengths of approximately 10 µm and thus can be integrated into an overcoupled resonant cavity with quality factor Q ≈ 49, allowing for tens of picowatt near-infrared light emission coupled directly into a waveguide. The electron inelastic tunneling transition rate and the cavity mode density are modeled, and the transverse magnetic (TM) hybrid mode excitation rate is derived. The results coincide well with polarization resolved experiments. Additionally, current-stressed devices are shown to emit unpolarized light due to radiative recombination inside the silicon electrode.

Metamaterial graphene photodetector with bandwidth exceeding 500 gigahertz.

Although graphene has met many of its initially predicted optoelectronic, thermal, and mechanical properties, photodetectors with large spectral bandwidths and extremely high frequency responses remain outstanding. In this work, we demonstrate a >500 gigahertz, flat-frequency response, graphene-based photodetector that operates under ambient conditions across a 200-nanometer-wide spectral band with center wavelengths adaptable from <1400 to >4200 nanometers. Our detector combines graphene with metamaterial perfect absorbers with direct illumination from a single-mode fiber, which breaks with the conventional miniaturization of photodetectors on an integrated photonic platform. This design allows for much higher optical powers while still allowing record-high bandwidths and data rates. Our results demonstrate that graphene photodetectors can outperform conventional technologies in terms of speed, bandwidth, and operation across a large spectral range.

Erratum: GHz Rotation of an Optically Trapped Nanoparticle in Vacuum [Phys. Rev. Lett. 121, 033602 (2018)].

This corrects the article DOI: 10.1103/PhysRevLett.121.033602.

Nano-opto-electro-mechanical switches operated at CMOS-level voltages.

Combining reprogrammable optical networks with complementary metal-oxide semiconductor (CMOS) electronics is expected to provide a platform for technological developments in on-chip integrated optoelectronics. We demonstrate how opto-electro-mechanical effects in micrometer-scale hybrid photonic-plasmonic structures enable light switching under CMOS voltages and low optical losses (0.1 decibel). Rapid (for example, tens of nanoseconds) switching is achieved by an electrostatic, nanometer-scale perturbation of a thin, and thus low-mass, gold membrane that forms an air-gap hybrid photonic-plasmonic waveguide. Confinement of the plasmonic portion of the light to the variable-height air gap yields a strong opto-electro-mechanical effect, while photonic confinement of the rest of the light minimizes optical losses. The demonstrated hybrid architecture provides a route to develop applications for CMOS-integrated, reprogrammable optical systems such as optical neural networks for deep learning.

Low-loss hybrid plasmonic coupler.

We demonstrate a low-loss coupling scheme between a silicon photonic waveguide and a hybrid-plasmonic waveguide. Measured coupling efficiencies reach up to 94% or -0.27 dB. The metal-insulator-semiconductor structure is fabrication-tolerant and adaptable to a wide range of materials including those used in CMOS processes. The coupler is a promising building block for low-loss active plasmonic devices.

GHz Rotation of an Optically Trapped Nanoparticle in Vacuum.

We report on rotating an optically trapped silica nanoparticle in vacuum by transferring spin angular momentum of light to the particle's mechanical angular momentum. At sufficiently low damping, realized at pressures below 10^{-5} mbar, we observe rotation frequencies of single 100 nm particles exceeding 1 GHz. We find that the steady-state rotation frequency scales linearly with the optical trapping power and inversely with pressure, consistent with theoretical considerations based on conservation of angular momentum. Rapidly changing the polarization of the trapping light allows us to extract the pressure-dependent response time of the particle's rotational degree of freedom.