ABSTRACT
High-electron-mobility transistors (HEMTs) are a promising device in the field of radio frequency and wireless communication. However, to unlock the full potential of HEMTs, the fabrication of large-size flexible HEMTs is required. Herein, a large-sized (> 2 cm2) of AlGaN/AlN/GaN heterostructure-based HEMTs were successfully stripped from sapphire substrate to a flexible polyethylene terephthalate substrate by an electrochemical lift-off technique. The piezotronic effect was then induced to optimize the electron transport performance by modulating/tuning the physical properties of two-dimensional electron gas (2DEG) and phonons. The saturation current of the flexible HEMT is enhanced by 3.15% under the 0.547% tensile condition, and the thermal degradation of the HEMT was also obviously suppressed under compressive straining. The corresponding electrical performance changes and energy diagrams systematically illustrate the intrinsic mechanism. This work not only provides in-depth understanding of the piezotronic effect in tuning 2DEG and phonon properties in GaN HEMTs, but also demonstrates a low-cost method to optimize its electronic and thermal properties.
ABSTRACT
1D semiconductor nanowires (NWs) have been extensively studied in recent years due to the predominant mechanical flexibility caused by a large surface-to-volume ratio and unique electrical and optical properties induced by the 1D quantum confinement effect. Herein, we use a top-down two-step preparation method to synthesize AlGaN/AlN/GaN heterojunction NWs with controllable size. A single NW is transferred to a flexible poly(ethylene terephthalate) substrate and fixed by indium tin oxide electrodes to form an ohmic contact for the strain sensor. An external mechanical stress is introduced to study the performance of the fabricated piezotronic strain sensor. The gauge factor is as high as 30 under compressive or tensile stress, which indicates a high sensitivity of the strain sensor. Periodic strain tests show the high stability and repeatability of the sensor. The working mechanism of the strain sensor is investigated and systematically analyzed under compressive and tensile strain. Here, we describe a strain sensor that shows a great application potential in wearable integrated circuits, in health-monitoring devices, and in artificial intelligence.
ABSTRACT
In this work, a new type of self-powered, high-performance ultra-thin p-Si/n-ZnO nanowire (NW) flexible photodetector (PD) and its application as full-spectrum optical sensor and pyroelectric nanogenerator (PENG) are demonstrated. The working mechanism of PDs for PENGs is carefully investigated and systematically analyzed. The self-powered PDs exhibit high responsivity (1200 mA/W), high detectivity (1013 Jones) and fast response (τr = 18 µs, τf = 25 µs) under UV illumination. High and stable short-circuit output currents at each wavelength from ultraviolet (UV) to near-infrared (NIR) demonstrates that the device can realize full-spectrum optical communication. An experiment in which the PENG powers other devices is designed to further demonstrate the proposed working mechanism. This work provides an effective approach to realize self-powered, high-performance PDs for full-spectrum communication. Also, the fabrication of the PENG utilizing a simple and low-cost method shows its potential applications in self-powered flexible electronic devices.
ABSTRACT
As ideal building blocks for optoelectronic devices, one-dimensional (1D) single-crystal perovskite microwires (MWs) have received widespread attention due to their unique physical and chemical properties. Herein, a one-step solution in-plane self-assembly method is proposed to directly grow millimeter-long CsPbBr3 MWs with superior crystal quality at atmospheric environment. This method effectively avoids the use of toxic antisolvents. Furthermore, a MW-based photodetector is successfully fabricated, showing high photoresponsivity (20 A/W) and fast response (less than 0.3 ms). The stability of the photodetector is also confirmed by aging MW in air for 60 days, which shows a negligible change of photocurrent from 1.29 to 1.25 nA (-3 V) under the same experimental conditions. This work provides a low-cost and fast synthesis method for the preparation of single-crystal perovskite MWs and demonstrates their potential application for high-performance and stable photoelectronic device.
