Substitutional disorder and charge localization in manganites.

In the manganites RE(1 - x)AE(x)MnO(3) (RE and AE being rare-earth and alkaline-earth elements, respectively) the random distribution of RE(3 + ) and AE(2 + ) induces random, but correlated, shifts of site energies of charge carriers in the Mn sites. We consider a realistic model of this diagonal disorder, in addition to the double-exchange hopping disorder, and investigate the metal-insulator transition as a function of temperature, across the paramagnetic-ferromagnetic line, and as a function of doping  x. Contrary to previous results, we find that values of parameters, estimated from the electronic structure of the manganites, are not incompatible with the possibility of a disorder-induced metal to insulator transition accompanying the ferromagnetic to paramagnetic transition at intermediate doping (x ∼ 0.2-0.4). These findings indicate clearly that substitutional disorder has to be considered as an important effect when addressing the colossal magnetoresistance properties of manganites.

Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect.

We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magnetotransport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight-binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to midinfrared energies by using fields of less, approximately < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.