Excited-state absorption in thulium-doped materials in the near-infrared.

Excited-state absorption (ESA) is a key process for upconversion pumping schemes of thulium (Tm3+) doped laser materials. We have systematically studied two ESA transitions in the near-infrared spectral range, namely 3F4 → 3F2,3 (at ∼1 µm) and 3F4 → 3H4 (at ∼1.5 µm), in various Tm3+-doped fluoride (ZBLAN glass, cubic KY3F10 and CaF2, tetragonal LiYF4 and LiLuF4, monoclinic BaY2F8 crystals) and oxide (cubic Y3Al5O12, orthorhombic YAlO3 crystals) laser materials, using a pump-probe method with a polarized light. An approach to calculate the constants of energy-transfer upconversion (ETU) is also presented.

Dual-wavelength-pumping of mid-infrared Tm:YLF laser at 2.3†µm: demonstration of pump seeding and recycling processes.

Upconversion pumping of thulium lasers emitting around 2.3 µm (the 3H4 → 3H5 transition) has recently attracted a lot of attention as it is compatible with the mature Yb-laser technology. To explore this possibility, we built a mid-infrared Tm:LiYF4 laser pumped by an Yb:CaF2 laser at 1.05 µm delivering an output power of 110 mW at 2.31 µm for a maximum incident pump power of 2.0 W. A strong absorption issue appeared in the Tm laser: the slope efficiency vs. the incident pump power was 7.6% while that vs. the absorbed pump power reached 29%. To overcome this issue, a dual-wavelength pumping at 0.78 µm and 1.05 µm was explored (combining both the direct and upconversion pumping schemes). The reciprocal interplay between the two pumps was studied to evaluate their benefits in terms of the pump absorption and laser efficiency. We observed an interesting decrease of the laser threshold for upconversion pumping when adding a small fraction of the direct pump revealing a seeding effect for the excited-state absorption from the metastable 3F4 level. A recycling process of this manifold by excited-state absorption in the 3F4 → 3F2,3 loop was also observed. The pump absorption seeding is a viable route for the development of low-threshold upconversion pumped thulium lasers.

Thermal lensing, heat loading and power scaling of mid-infrared Er:CaF2 lasers.

Mid-infrared Er:CaF2 laser operating on the 4I11/2 → 4I13/2 transition is developed. Its power scaling capabilities and thermo-optics (fractional heat loading and thermal lensing) are compared under pumping into the 4I11/2 and 4I9/2 states. Using a 4.5 at.% Er:CaF2 crystal, a record-high continuous-wave output power of 0.83 W is achieved at 2800 nm with a slope efficiency of 31.6% and a laser threshold of 24 mW and the fractional heat loading is measured under lasing and non-lasing conditions, yielding the values of 52.0% and 71.7%, respectively (for pumping at 967.6 nm, into the 4I11/2 state). The thermal lens in Er:CaF2 is negative (divergent) owing to the negative thermo-optic coefficient and large and negative contribution of the photo-elastic effect. The sensitivity factors of the thermal lens are Mr = -4.84 and Mθ = -5.15 [m-1/(kW/cm2)] and the astigmatism degree is as low as 6%. When pumping into the higher lying 4I9/2 manifold, the thermal lens is enhanced owing to the additional heat generation from the multiphonon non-radiative path from this state, and the laser slope efficiency is deteriorated.

Er:KY3F10 laser at 2.80 µm.

We report on the mid-infrared laser operation of a cubic 15 at.% Er3+:KY3F10 crystal. In the quasi-continuous-wave regime, the peak power reaches 255 mW at 2.80 µm (the 4I11/2→4I13/2 transition) with a slope efficiency of 10.9% and a laser threshold of 58 mW. Two pumping schemes (to the 4I11/2 and 4I9/2 states) are compared. The emission properties of the Er3+ ions in KY3F10 are studied, indicating high stimulated-emission cross-section of 0.57×10-20cm2 at 2.80 µm, a large gain bandwidth of 40 nm, and a long 4I11/2 state lifetime of 4.64 ms.

Watt-level europium laser at 703 nm.

We report on a watt-level highly efficient europium laser operating at the ${^5{\rm D}_0 \to {^7}{\rm F}_4}$ transition. It is based on the stoichiometric ${\rm KEu}{({\rm WO}_4)_2}$ crystal. Under pumping by a green laser at 532.1 nm, the ${\rm KEu}{({\rm WO}_4)_2}$ laser generated a maximum peak output power of 1.11 W at ${\sim}{703}\;{\rm nm}$ with a slope efficiency of 43.2% and a linear polarization ($E\|\;{N_m}$). A laser threshold as low as 64 mW was achieved. True continuous-wave operation was demonstrated. The polarized emission properties of monoclinic ${\rm KEu}{({\rm WO}_4)_2}$ were determined.

Watt-level diode-pumped thulium lasers around 2.3 µm.

We report on efficient diode-pumped mid-infrared lasers based on Tm:LiYF4, Tm:Y3Al5O12, and Tm:YAlO3 crystals. These lasers operate in the continuous-wave (CW) regime and deliver watt-level output power at the wavelengths of 2.2-2.3 µm (the 3H4→3H5Tm3+ transition). In particular, a 1.8 at. % Tm:YAlO3 laser pumped at 789 nm generates a maximum CW output power of 1.32 W at 2272-2277 nm with a slope efficiency of 33.1% (with respect to the absorbed pump power), a linear laser polarization (E∥b), and a fundamental transverse output mode (the measured Mx2=1.26, My2=1.68). In the quasi-CW regime, the output peak power is scaled up to 2.69 W. The pump quantum efficiency and the fractional heat loading are estimated and discussed.

Widely tunable in-band-pumped Tm:CaF2 laser.

This Letter presents the efficient laser operation of a Tm:CaF2 crystal in-band pumped at 1610 nm by an Er-Yb-codoped fiber laser system. A laser slope efficiency of 55% (versus incident pump power) was achieved in a continuous-wave regime, with a maximum output power of 1.25 W at ∼1.88µm in a nearly diffraction-limited beam (M2=1.14). We also demonstrated a continuous tuning range of 180 nm, which extends to short wavelengths down to 1773 nm.

Co-sputtered Pr3+-doped Ga-Ge-Sb-Se active waveguides for mid-infrared operation.

This work reports on the properties of luminescent waveguides based on quaternary Ga-Ge-Sb-Se amorphous thin films doped with praseodymium. The waveguides were fabricated via magnetron co-sputtering, followed by inductively coupled plasma reactive ion etching. The initial thin film thickness and optical properties were assessed and the spectroscopic properties of the waveguides were measured. The measurements show promising results-it is possible to obtain mid-infrared fluorescence at 2.5 and 4.5 µm by injecting near-infrared light at 1.5 µm as the pump beam. By comparing waveguides with various praseodymium concentrations, the optimal doping content for maximum fluorescence intensity was identified to be close to 4100 ppmw. Finally, correlation between the intensity of mid-infrared emission and the width/length of the waveguide is shown.

Comparative study of Er3+-doped Ga-Ge-Sb-S thin films fabricated by sputtering and pulsed laser deposition.

Despite the renewed interest in rare earth-doped chalcogenide glasses lying mainly in mid-infrared applications, a few comprehensive studies so far have presented the photoluminescence of amorphous chalcogenide films from visible to mid-infrared. This work reports the fabrication of luminescent quaternary sulfide thin films using radio-frequency sputtering and pulsed laser deposition, and the characterization of their chemical composition, morphology, structure, refractive index and Er3+ photoluminescence. The study of Er3+ 4I13/2 level lifetimes enables developing suitable deposition parameters; the dependency of composition, structural and spectroscopic properties on deposition parameters provides a way to tailor the RE-doped thin film properties. The surface roughness is very low for both deposition methods, ensuring reasonable propagation optical losses. The effects of annealing on the sulfide films spectroscopy and lifetimes were assessed. PLD appears consistent composition-wise, and largely independent of the deposition conditions, but radiofrequency magnetron sputtering seems to be more versatile, as one may tailor the film properties through deposition parameters manipulation. The luminescence via rare earth-doped chalcogenide waveguiding micro-structures might find easy-to-use applications concerning telecommunications or on-chip optical sensors for which luminescent sources or amplifiers operating at different wavelengths are required.

Close look on cubic Tm:KY3F10 crystal for highly efficient lasing on the 3H4 → 3H5 transition.

We report on Czochralski growth, detailed ground- and excited-state absorption and emission spectroscopy and highly-efficient mid-infrared (∼2.3 µm) laser operation of a cubic potassium yttrium fluoride crystal, Tm:KY3F10. The peak stimulated-emission cross-section for the 3H4 → 3H5 transition is 0.34×10-20 cm2 at 2345 nm with an emission bandwidth exceeding 50 nm. The excited-state absorption spectra for the 3F4 → 3F2,3 and 3F4 → 3H4 transitions are measured and the cross-relaxation is quantified. A continuous-wave 5 at.% Tm:KY3F10 laser generated 0.84 W at 2331-2346 nm by pumping at 773 nm, with a record-high slope efficiency of 47.7% (versus the incident pump power) owing to the efficient action of energy-transfer upconversion leading to a pump quantum efficiency approaching 2. The first Tm:KY3F10 laser with ESA-assisted upconversion pumping (at 1048 nm) is also demonstrated. Due to its broadband emission properties, Tm:KY3F10 is promising for ultrashort pulse generation at ∼2.3-2.4 µm.

Continuous-wave Tm:YAlO3 laser at ∼2.3 µm.

The orthorhombic Tm3+:YAlO3 crystal is promising for laser operation at the H43→F43 (1.5 µm) and H43→H53 (2.3 µm) transitions. Stimulated-emission cross-sections for these transitions are determined with polarized light. Peak values of 0.59×10-20 cm2 and 0.80×10-20 cm2 are found at 1438 nm and 2275 nm, respectively, both for E∥b. The cross-relaxation defining the upper-laser level lifetime is quantified. Continuous-wave lasing at the H43→H53 transition is achieved with an a-cut 1.5 at.% Tm:YAlO3 crystal. The laser generated 254 mW at 2273 nm with a slope efficiency of 17.8% and linear polarization (E∥b).

Thulium laser at ∼2.3 µm based on upconversion pumping.

We report on novel upconversion (UC) pumping schemes for 2.3 µm thulium (Tm) lasers (the H43→H53 transition) based on a photon avalanche mechanism populating the intermediate metastable level (F43) acting as an effective ground state. The proposed pump wavelengths are ∼1 and ∼1.5 µm, each one corresponding to a resonant excited-state absorption transition F43→F2,33 and F43→H43, respectively. UC pumping at 1040, 1055, and 1451 nm of 2.3 µm Tm:LiYF4 lasers is demonstrated. In the former case, the laser generates 102 mW at 2302 nm with a slope efficiency of 14.6% (versus the incident pump power). The laser dynamics is studied. UC pumping is promising for reaching high efficiencies in 2.3 µm Tm lasers.

Laser operation of highly-doped Tm:LiYF4 epitaxies: towards thin-disk lasers.

Quasi-continuous-wave laser operation of 20 at.% Tm:LiYF4 thin films (84-240 µm) grown by Liquid Phase Epitaxy (LPE) on undoped LiYF4 substrates is achieved. The 240 µm-thick Tm:LiYF4 active layer pumped at 793 nm with a simple double-pass scheme generated 152 mW (average power) at 1.91 µm with a slope efficiency of 34.4% with respect to the absorbed pump power. A model of highly-doped Tm:LiYF4 lasers accounting for cross-relaxation, energy-transfer upconversion and energy migration is developed showing good agreement with the experiment. The pump quantum efficiency for Tm3+ ions is discussed and the energy-transfer parameters are derived. These results show that LPE-grown Tm:LiYF4 thin films are promising for ~1.9 µm thin-disk lasers.

Ytterbium calcium fluoride waveguide laser.

Calcium fluoride is a well-known material for optical components. It is also suited for doping with rare-earth ions, e.g., ytterbium ones. Yb:CaF2 is an efficient gain medium for high-power and ultrashort-pulse bulk lasers around 1 µm. We report on the first Yb:CaF2 planar waveguide laser. High-optical-quality single-crystalline waveguiding Yb:CaF2 thin films are grown on bulk CaF2 substrates by Liquid Phase Epitaxy. The spectroscopic study indicates the predominant coordination of isolated Yb3+ ions in trigonal oxygen-assisted sites, C3v(T2). The optical gain in Yb:CaF2 waveguide is demonstrated. A 1.4 at.% Yb:CaF2 planar waveguide laser generated 114 mW at 1037 nm with a slope efficiency of 12.9%. Yb:CaF2 films are promising for power-scalable waveguide mode-locked lasers and amplifiers.

Watt-level Tm:LiYF4 channel waveguide laser produced by diamond saw dicing.

Low-loss surface channel waveguides with a cross-section of 30 × 30 µm2 are produced by diamond saw dicing of 6.2 at.% Tm3+, 3.5 at.% Gd3+:LiYF4 films grown by liquid phase epitaxy (LPE) on (001)-oriented bulk undoped LiYF4 substrates. Pumped by a Ti:Sapphire laser at 783 nm, a continuous-wave Tm:LiYF4 waveguide laser generated 1.30 W at 1880 nm (for π-polarization) with a slope efficiency of 80% with respect to the absorbed pump power. The laser threshold was at 80 mW. The waveguide morphology was studied revealing low roughness (3 ± 2 µm) as expressed by the propagation losses of <0.3 dB/cm. A combination of LPE and diamond saw dicing is a promising technology for multi-watt single-mode channel waveguide lasers and amplifiers.

7 to 8 µm emission from Sm3+ doped selenide fibers.

We report on the observation of the long wave-infrared (LWIR) emission centered at 7.3 µm of Sm3+ doped chalcogenide fibers. The chemical composition of the selenide glass host matrix (Ga5Ge20Sb10Se65) enables the drawing of 500 ppm and 1000 ppm Sm3+ doped fibers. By means of conventional glass elaboration methods, these Sm3+ doped fibered materials exhibit a significant emission band from 6.5 to 8.5 µm with a maximum emission around 7.3 µm whether they are excited at 1.45 µm or at 2.05 µm. Absorption spectra, Judd-Ofelt analysis, NIR, MWIR and LWIR luminescence spectra are presented and discussed.

8 µm luminescence from a Tb3+ GaGeSbSe fiber.

In this Letter, we report for the first time, to the best of our knowledge, on an emission at 8 µm from Tb3+-doped Ga5Ge20Sb10Se65 chalcogenide fibers with doping levels at 1000 ppm and 500 ppm. These fibers were drawn following conventional melt-quenching methods and pumped at 2.05 µm using a Tm3+: YAG laser. The spectroscopic properties of the emitting F47 manifold are investigated to rule out any parasitic signal mimicking the real Tb3+ 8 µm emission. Time-resolved spectroscopic experiments are presented to build a comprehensive study of this 8 µm fluorescence recorded with a clear signal-to-noise ratio.

2.3 µm Tm3+:YLF mode-locked laser.

A passively mode-locked Tm:YLF laser emitting at 2.3 µm is reported for the first time, to the best of our knowledge. The continuous-wave stable mode-locking operation is obtained with a semiconductor saturable absorber mirror at a repetition rate of 100 MHz. The average output power is 165 mW for a pulse duration of 94 ps.

Guided Photoluminescence from Integrated Carbon-Nanotube-Based Optical Waveguides.

Thin films and ridge waveguides based on large-diameter semiconducting single-wall carbon nanotubes (s-SWCNTs) dispersed in a polyfluorene derivative are fabricated and optically characterized. Ridge waveguides are designed with appropriate dimensions for single-mode propagation at 1550 nm. Using multimode ridge waveguides, guided s-SWCNT photoluminescence is demonstrated for the first time in the near-infrared telecommunications window.

Broadband-tunable CW laser operation of Pr(3+):LiYF(4) around 900 nm.

We present here the first broadband-tunable CW laser operation of a Pr(3+)-doped LiYF(4) crystal in the 900-nm spectral range after pumping with an optically pumped semiconductor laser at 479 nm. It is confirmed that the entire emission band can be assigned to the same set of thermalized emitting levels (I(6)1,P3(0,1)). It is also demonstrated that laser performance could be improved up to laser slope efficiencies of about 33% with threshold absorbed pump powers not exceeding 100 mW.