All-electrical switching of a topological non-collinear antiferromagnet at room temperature.

Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics, as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions, have attracted extensive interest. However, the all-electrical control of such systems at room temperature, a crucial step toward practical application, has not been reported. Here, using a small writing current density of around 5 × 106 A·cm-2, we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet Mn3Sn, with a strong readout signal at room temperature in the Si/SiO2/Mn3Sn/AlOx structure, and without external magnetic field or injected spin current. Our simulations reveal that the switching originates from the current-induced intrinsic non-collinear spin-orbit torques in Mn3Sn itself. Our findings pave the way for the development of topological antiferromagnetic spintronics.

Observation of the nonlinear Hall effect under time-reversal-symmetric conditions.

The electrical Hall effect is the production, upon the application of an electric field, of a transverse voltage under an out-of-plane magnetic field. Studies of the Hall effect have led to important breakthroughs, including the discoveries of Berry curvature and topological Chern invariants1,2. The internal magnetization of magnets means that the electrical Hall effect can occur in the absence of an external magnetic field2; this 'anomalous' Hall effect is important for the study of quantum magnets2-7. The electrical Hall effect has rarely been studied in non-magnetic materials without external magnetic fields, owing to the constraint of time-reversal symmetry. However, only in the linear response regime-when the Hall voltage is linearly proportional to the external electric field-does the Hall effect identically vanish as a result of time-reversal symmetry; the Hall effect in the nonlinear response regime is not subject to such symmetry constraints8-10. Here we report observations of the nonlinear Hall effect10 in electrical transport in bilayers of the non-magnetic quantum material WTe2 under time-reversal-symmetric conditions. We show that an electric current in bilayer WTe2 leads to a nonlinear Hall voltage in the absence of a magnetic field. The properties of this nonlinear Hall effect are distinct from those of the anomalous Hall effect in metals: the nonlinear Hall effect results in a quadratic, rather than linear, current-voltage characteristic and, in contrast to the anomalous Hall effect, the nonlinear Hall effect results in a much larger transverse than longitudinal voltage response, leading to a nonlinear Hall angle (the angle between the total voltage response and the applied electric field) of nearly 90 degrees. We further show that the nonlinear Hall effect provides a direct measure of the dipole moment10 of the Berry curvature, which arises from layer-polarized Dirac fermions in bilayer WTe2. Our results demonstrate a new type of Hall effect and provide a way of detecting Berry curvature in non-magnetic quantum materials.

Magnetoresistance Anomaly in Topological Kondo Insulator SmB6 Nanowires with Strong Surface Magnetism.

Topological Kondo insulators (TKIs) are a new class of topological materials in which topological surface states dominate the transport properties at low temperatures. They are also an ideal platform for studying the interplay between strong electron correlations and topological order. Here, hysteretic magnetoresistance (MR) is observed in TKI SmB6 thin nanowires at temperatures up to 8 K, revealing the strong magnetism at the surface of SmB6. It is also found that such MR anomaly exhibits an intriguing finite size effect and only appears in nanowires with diameter smaller than 58 nm. These nontrivial phenomena are discussed in terms of the latest Kondo breakdown model, which incorporates the RKKY magnetic interaction mediated by surface states with the strong electron correlation in SmB6. It would provide new insight into the nature of TKI surface states. Additionally, a non-monotonically temperature dependent positive magnetoresistance is observed at intermediate temperatures, suggesting the possible impurity-band conduction in SmB6, other than the surface state transport at low temperatures and the bulk-band transport at high temperatures.