Ge Bidirectional Diffusion to Simultaneously Engineer Back Interface and Bulk Defects in the Absorber for Efficient CZTSSe Solar Cells.

Aiming at a large open-circuit voltage (VOC ) deficit in Cu2 ZnSn(S,Se)4 (CZTSSe) solar cells, a new and effective strategy to simultaneously regulate the back interface and restrain bulk defects of CZTSSe absorbers is developed by directly introducing a thin GeO2 layer on Mo substrates. Power conversion efficiency (power-to-efficiency) as high as 13.14% with a VOC of 547 mV is achieved for the champion device, which presents a certified efficiency of 12.8% (aperture area: 0.25667 cm2 ). Further investigation reveals that Ge bidirectional diffusion simultaneously occurs toward the CZTSSe absorber and MoSe2 layer at the back interface while being selenized. That is, some Ge element from the GeO2 diffuses into the CZTSSe absorber layer to afford Ge-doped absorbers, which can significantly reduce the defect density and band tailing, and facilitate quasi-Fermi level split by relatively higher hole concentration. Meanwhile, a small amount of Ge element also participates in the formation of MoSe2 at the back interface, thus enhancing the work function of MoSe2 and effectively separating photoinduced carriers. This work highlights the synergistic effect of Ge element toward the bulk absorber and the back interface and also provides an easy-handling way to achieve high-performance CZTSSe solar cells.

Two-Step Annealing CZTSSe/CdS Heterojunction to Improve Interface Properties of Kesterite Solar Cells.

The post-heating treatment of the CZTSSe/CdS heterojunction can enhance the interfacial properties of kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. In this regard, a two-step annealing method was developed to enhance the heterojunction quality for the first time. That is, a low-temperature (90 °C) process was introduced before the high-temperature treatment, and 12.3% efficiency of CZTSSe solar cells was achieved. Further investigation revealed that the CZTSSe/CdS heterojunction band alignment with a smaller spike barrier can be realized by the two-step annealing treatment, which assisted in carrier transportation and reduced the charge recombination loss, thus enhancing the open-circuit voltage (VOC) and fill factor (FF) of the devices. In addition, the two-step annealing could effectively avoid the disadvantages of direct high-temperature treatment (such as more pinholes on CdS films and excess element diffusion), improve the CdS crystallization, and decrease the defect densities within the device, especially interfacial defects. This work provides an effective method to improve the CZTSSe/CdS heterojunction properties for efficient kesterite solar cells.

Coordination engineering of Cu-Zn-Sn-S aqueous precursor for efficient kesterite solar cells.

Aqueous precursors provide an alluring approach for low-cost and environmentally friendly production of earth-abundant Cu2ZnSn(S, Se)4 (CZTSSe) solar cells. The key is to find an appropriate molecular agent to prepare a stable solution and optimize the coordination structure to facilitate the subsequent crystallization process. Herein, we introduce thioglycolic acid (TGA), which possesses strong coordination (SH) and hydrophilic (COOH) groups, as the agent and use deprotonation to regulate the coordination competition within the aqueous solution. Ultimately, metal cations are adequately coordinated with thiolate anions, and carboxylate anions are released to become hydrated to form an ultrastable aqueous solution. These factors have contributed to achieving CZTSSe solar cells with an efficiency as high as 12.3% (a certified efficiency of 12.0%) and providing an extremely wide time window for precursor storage and usage. This work represents significant progress in the non-toxic solution fabrication of CZTSSe solar cells and holds great potential for the development of CZTSSe and other metal sulfide solar cells.