Heterogeneously integrated III-V/silicon distributed feedback lasers.

Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a silicon waveguide, 50 dB side-mode suppression ratio and continuous wave operation up to 60°C around 1550 nm is obtained.

III-V-on-silicon multi-frequency lasers.

Compact multi-frequency lasers are realized by combining III-V based optical amplifiers with silicon waveguide optical demultiplexers using a heterogeneous integration process based on adhesive wafer bonding. Both devices using arrayed waveguide grating routers as well as devices using ring resonators as the demultiplexer showed lasing with threshold currents between 30 and 40 mA and output powers in the order of a few mW. Laser operation up to 60°C is demonstrated. The small bending radius allowable for the silicon waveguides results in a short cavity length, ensuring stable lasing in a single longitudinal mode, even with relaxed values for the intra-cavity filter bandwidths.

Near-field analysis of metallic DFB lasers at telecom wavelengths.

We image in near-field the transverse modes of semiconductor distributed feedback (DFB) lasers operating at λ ≈ 1.3 µm and employing metallic gratings. The active region is based on tensile-strained InGaAlAs quantum wells emitting transverse magnetic polarized light and is coupled via an extremely thin cladding to a nano-patterned gold grating integrated on the device surface. Single mode emission is achieved, which tunes with the grating periodicity. The near-field measurements confirm laser operation on the fundamental transverse mode. Furthermore--together with a laser threshold reduction observed in the DFB lasers--it suggests that the patterning of the top metal contact can be a strategy to reduce the high plasmonic losses in this kind of systems.

Directly modulated and fully tunable hybrid silicon lasers for future generation of coherent colorless ONU.

We propose and demonstrate asymmetric 10 Gbit/s upstream--100 Gbit/s downstream per wavelength colorless WDM/TDM PON using a novel hybrid-silicon chip integrating two tunable lasers. The first laser is directly modulated in burst mode for upstream transmission over up to 25 km of standard single mode fiber and error free transmission over 4 channels across the C-band is demonstrated. The second tunable laser is successfully used as local oscillator in a coherent receiver across the C-band simultaneously operating with the presence of 80 downstream co-channels.

In situ generation of surface plasmon polaritons using a near-infrared laser diode.

We demonstrate a semiconductor laser-based approach which enables plasmonic active devices in the telecom wavelength range. We show that optimized laser structures based on tensile-strained InGaAlAs quantum wells-coupled to integrated metallic patternings-enable surface plasmon generation in an electrically driven compact device. Experimental evidence of surface plasmon generation is obtained with the slit-doublet experiment in the near-field, using near-field scanning optical microscopy measurements.

Linear semiconductor optical amplifiers for amplification of advanced modulation formats.

The capability of semiconductor optical amplifiers (SOA) to amplify advanced optical modulation format signals is investigated. The input power dynamic range is studied and especially the impact of the SOA alpha factor is addressed. Our results show that the advantage of a lower alpha-factor SOA decreases for higher-order modulation formats. Experiments at 20 GBd BPSK, QPSK and 16QAM with two SOAs with different alpha factors are performed. Simulations for various modulation formats support the experimental findings.

Quantum dot SOA input power dynamic range improvement for differential-phase encoded signals.

Experimentally we find a 10 dB input power dynamic range advantage for amplification of phase encoded signals with quantum dot SOA as compared to low-confinement bulk SOA. An analysis of amplitude and phase effects shows that this improvement can be attributed to the lower alpha-factor found in QD SOA.

Experimental investigation of the timing jitter in self-pulsating quantum-dash lasers operating at 1.55 microm.

We report for the first time on the systematic measurement of timing jitter of 40-GHz self-pulsating Fabry-Perot laser based on InAs/InP quantum dashes emitting at 1.55 microm. Two different methods, one based on optical cross-correlation and one on electrical spectrum sideband integration are used and show a good agreement, yielding a jitter of 0.86 ps in the 1 MHz---20 MHz frequency range with a potential of 280 fs for optimized driving conditions. Amplitude noise and high-frequency timing jitter contributions are also discussed.

Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser.

We report on subpicosecond pulse generation using passively mode locked lasers (MLL) based on a low optical confinement single InGaAsP/InP quantum well active layer grown in one epitaxial step. Systematic investigation of the performances of two-section MLLs emitting at 1.54 microm evidenced pulse width of 860 fs at 21.31 GHz repetition rate, peak power of approximately 500 mW and a time-bandwith product of 0.57. A 30 kHz linewidth of the photodetected radio-frequency electrical spectrum is further demonstrated at 21 GHz which is, to our knowledge, the lowest value ever reported for a quantum well device.

Axial superresolution of two-photon microfabrication.

An axial superresolution diffraction theory is developed in a two-photon microfabrication system. This method can improve the axial superresolution of the two-photon microfabrication system. A theoretical analysis of the photosensitive resin is discussed based on the exciting power and the concentration of free radical theory. Simulated results of the two-photon microfabrication verify the method and show that it can provide insight into the microfabrication system.

Single-mode in-gap emission of medium-width photonic crystal waveguides on InP substrate.

In this paper, we present a numerical and experimental study of W3-4 photonic crystal (PhC) waveguide lasers fabricated on InP substrate. In such a PhC waveguide, the dispersion curve of the fundamental mode folds in the two-dimensional gap of the triangular lattice. Folding occurs at the Brillouin zone edge as in the case of genuine distributed feedback (DFB) lasers. Single-mode emission is presently observed in both electrical and optical pumping configurations. This behavior is attributed to the different levels of out-of-plane losses experienced by the two DFB mode components. Three-dimensional finite-difference-time-domain calculations are used to finely quantify the quality factors of the waveguide modes. The modal discrimination is shown to be reinforced when lasing occurs far from the conduction band edge. This trend is also predicted for other canonical waveguides in triangular PhCs as for instance W2-3 waveguides.