Temperature-dependent resonance energy transfer from semiconductor quantum wells to graphene.

Resonance energy transfer (RET) has been employed for interpreting the energy interaction of graphene combined with semiconductor materials such as nanoparticles and quantum-well (QW) heterostructures. Especially, for the application of graphene as a transparent electrode for semiconductor light emitting diodes, the mechanism of exciton recombination processes such as RET in graphene-semiconductor QW heterojunctions should be understood clearly. Here, we characterized the temperature-dependent RET behaviors in graphene/semiconductor QW heterostructures. We then observed the tuning of the RET efficiency from 5% to 30% in graphene/QW heterostructures with ∼60 nm dipole-dipole coupled distance at temperatures of 300 to 10 K. This survey allows us to identify the roles of localized and free excitons in the RET process from the QWs to graphene as a function of temperature.

Widely tunable mid-infrared quantum cascade lasers using sampled grating reflectors.

We demonstrate a three-section, electrically pulsed quantum cascade laser which consists of a Fabry-Pérot section placed between two sampled grating distributed Bragg reflectors. The device is current-tuned between ten single modes spanning a range of 0.46 µm (63 cm(-1)), from 8.32 to 8.78 µm. The peak optical output power exceeds 280 mW for nine of the modes.

Photonic crystal disk lasers.

A novel type of nanolasers, which combines the advantages of photonic crystal lasers and microdisk lasers, has been demonstrated based on InAlGaAs/InGaAs quantum wells using pulsed optical pumping at room temperature. It incorporates the properties of small footprint, small mode volume, and submilliwatt threshold, and favors vertical emission. We believe that this type of laser acts as a promising candidate for highly-integrated on-chip nanolasers in applications for signal processing and index sensing.

Density-controlled growth of aligned ZnO nanowires sharing a common contact: a simple, low-cost, and mask-free technique for large-scale applications.

An effective, low cost, simple, and mask-free pathway is demonstrated for achieving density control of the aligned ZnO nanowires grown for large-scale applications. By a slight variation of the thickness of the thermally evaporated gold catalyst film, a significant change in the density of aligned ZnO nanowires has been controlled. The growth processes of the nanowires on an Al(0.5)Ga(0.5)N substrate has been studied based on the wetting behavior of gold catalyst with or without source vapor, and the results classify the growth processes into three categories: separated dots initiated growth, continuous layer initiated growth, and scattered particle initiated growth. This study presents an approach for growing aligned nanowire arrays on a ceramic substrate with the simultaneous formation of a continuous conducting electrode at the roots, which is important for device applications, such as field emission.

Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates.

Vertically aligned single-crystal ZnO nanorods have been successfully fabricated on semiconducting GaN, Al0.5Ga0.5N, and AlN substrates through a vapor-liquid-solid process. Near-perfect alignment was observed for all substrates without lateral growth. Room-temperature photoluminescence measurements revealed a strong luminescence peak at approximately 378 nm. This work demonstrates the possibility of growing heterojunction arrays of ZnO nanorods on AlxGa1-xN, which has a tunable band gap from 3.44 to 6.20 eV by changing the Al composition from 0 to 1, and opens a new channel for building vertically aligned heterojunction device arrays with tunable optical properties and the realization of a new class of nanoheterojunction devices.