Protective Coating Interfaces for Perovskite Solar Cell Materials: A First-Principles Study.

The protection of halide perovskites is important for the performance and stability of emergent perovskite-based optoelectronic technologies. In this work, we investigate the potential inorganic protective coating materials ZnO, SrZrO3, and ZrO2 for the CsPbI3 perovskite. The optimal interface registries are identified with Bayesian optimization. We then use semilocal density functional theory (DFT) to determine the atomic structure at the interfaces of each coating material with the clean CsI-terminated surface and three reconstructed surface models with added PbI2 and CsI complexes. For the final structures, we explore the level alignment at the interface with hybrid DFT calculations. Our analysis of the level alignment at the coating-substrate interfaces reveals no detrimental mid-gap states but rather substrate-dependent valence and conduction band offsets. While ZnO and SrZrO3 act as insulators on CsPbI3, ZrO2 might be suitable as an electron transport layer with the right interface engineering.

Electronic Characterization of a Charge-Transfer Complex Monolayer on Graphene.

Organic charge-transfer complexes (CTCs) formed by strong electron acceptor and strong electron donor molecules are known to exhibit exotic effects such as superconductivity and charge density waves. We present a low-temperature scanning tunneling microscopy and spectroscopy (LT-STM/STS) study of a two-dimensional (2D) monolayer CTC of tetrathiafulvalene (TTF) and fluorinated tetracyanoquinodimethane (F4TCNQ), self-assembled on the surface of oxygen-intercalated epitaxial graphene on Ir(111) (G/O/Ir(111)). We confirm the formation of the charge-transfer complex by dI/dV spectroscopy and direct imaging of the singly occupied molecular orbitals. High-resolution spectroscopy reveals a gap at zero bias, suggesting the formation of a correlated ground state at low temperatures. These results point to the possibility to realize and study correlated ground states in charge-transfer complex monolayers on weakly interacting surfaces.

Improved One-Shot Total Energies from the Linearized GW Density Matrix.

The linearized GW density matrix (γGW) is an efficient method to improve the static portion of the self-energy compared to that of ordinary perturbative GW while keeping the single-shot simplicity of the calculation. Previous work has shown that γGW gives an improved Fock operator and total energy components that approach the self-consistent GW quality. Here, we test γGW for dimer dissociation for the first time by studying N2, LiH, and Be2. We also calculate a set of self-consistent GW results in identical basis sets for a direct and consistent comparison. γGW approaches self-consistent GW total energies for a starting point based on a high amount of exact exchange. We also compare the accuracy of different total energy functionals, which differ when evaluated with a non-self-consistent density or density matrix. While the errors in total energies among different functionals and starting points are small, the individual energy components show noticeable errors when compared to reference data. The energy component errors of γGW are smaller than functionals of the density and we suggest that the linearized GW density matrix is a route to improving total energy evaluations in the adiabatic connection framework.

Atomic and electronic structure of cesium lead triiodide surfaces.

The (001) surface of the emerging photovoltaic material cesium lead triiodide (CsPbI3) is studied. Using first-principles methods, we investigate the atomic and electronic structure of cubic (α) and orthorhombic (γ) CsPbI3. For both phases, we find that CsI-termination is more stable than PbI2-termination. For the CsI-terminated surface, we then compute and analyze the surface phase diagram. We observe that surfaces with added or removed units of nonpolar CsI and PbI2 are most stable. The corresponding band structures reveal that the α phase exhibits surface states that derive from the conduction band. The surface reconstructions do not introduce new states in the bandgap of CsPbI3, but for the α phase, we find additional surface states at the conduction band edge.

The GW Compendium: A Practical Guide to Theoretical Photoemission Spectroscopy.

The GW approximation in electronic structure theory has become a widespread tool for predicting electronic excitations in chemical compounds and materials. In the realm of theoretical spectroscopy, the GW method provides access to charged excitations as measured in direct or inverse photoemission spectroscopy. The number of GW calculations in the past two decades has exploded with increased computing power and modern codes. The success of GW can be attributed to many factors: favorable scaling with respect to system size, a formal interpretation for charged excitation energies, the importance of dynamical screening in real systems, and its practical combination with other theories. In this review, we provide an overview of these formal and practical considerations. We expand, in detail, on the choices presented to the scientist performing GW calculations for the first time. We also give an introduction to the many-body theory behind GW, a review of modern applications like molecules and surfaces, and a perspective on methods which go beyond conventional GW calculations. This review addresses chemists, physicists and material scientists with an interest in theoretical spectroscopy. It is intended for newcomers to GW calculations but can also serve as an alternative perspective for experts and an up-to-date source of computational techniques.

Observation of Coexistence of Yu-Shiba-Rusinov States and Spin-Flip Excitations.

We investigate the spectral evolution in different metal phthalocyanine molecules on NbSe2 surface using scanning tunnelling microscopy (STM) as a function of the coupling with the substrate. For manganese phthalocyanine (MnPc), we demonstrate a smooth spectral crossover from Yu-Shiba-Rusinov (YSR) bound states to spin-flip excitations. This has not been observed previously and it is in contrast to simple theoretical expectations. We corroborate the experimental findings using numerical renormalization group calculations. Our results provide fundamental new insight on the behavior of atomic scale magnetic/SC hybrid systems, which is important, for example, for engineered topological superconductors and spin logic devices.

Coupled Yu-Shiba-Rusinov States in Molecular Dimers on NbSe2.

Magnetic impurities have a dramatic effect on superconductivity by breaking the time-reversal symmetry and inducing so-called Yu-Shiba-Rusinov (YSR) low energy bound states within the superconducting gap. The spatial extent of YSR states is greatly enhanced in two-dimensional (2D) systems, which should facilitate the formation of coupled states. Here, we observe YSR states on single cobalt phthalocyanine (CoPC) molecules on a 2D superconductor NbSe2 using low-temperature scanning tunneling microscopy (STM) and spectroscopy. We use STM lateral manipulation to create controlled CoPc dimers and demonstrate the formation of coupled YSR states. The experimental results are corroborated by theoretical analysis of the coupled states in lattice and continuum models.

Charge-Transfer-Driven Nonplanar Adsorption of F4TCNQ Molecules on Epitaxial Graphene.

π-conjugated organic molecules tend to adsorb in a planar configuration on graphene irrespective of their charge state. In contrast, here we demonstrate charging-induced strong structural relaxation of tetrafluorotetracyanoquinodimethane (F4TCNQ) on epitaxial graphene on Ir(111) (G/Ir(111)). The work function modulation over the graphene moiré unit cell causes site-selective charging of F4TCNQ. Upon charging, the molecule anchors to the face-centered cubic sites of the G/Ir(111) moiré through one or two cyano groups. The reaction is reversible and can be triggered on a single molecule by moving it between different adsorption sites. We introduce a model taking into account the trade-off between tilt-induced charging and reduced van der Waals interactions, which provides a general framework for understanding charging-induced structural relaxation on weakly interacting substrates. In addition, we argue that the partial sp3 rehybridization of the underlying graphene and the possible bonding mechanism between the cyano groups and the graphene substrate are also relevant for the complete understanding of the experiments. These results provide insight into molecular charging on graphene, and they are directly relevant for potential device applications where the use of molecules has been suggested for doping and band structure engineering.

Dirac point movement and topological phase transition in patterned graphene.

The honeycomb lattice of graphene is characterized by linear dispersion and pseudospin chirality of fermions on the Dirac cones. If lattice anisotropy is introduced, the Dirac cones stay intact but move in reciprocal space. Dirac point movement can lead to a topological transition from semimetal to semiconductor when two inequivalent Dirac points merge, an idea that has attracted significant research interest. However, such movement normally requires unrealistically high lattice anisotropy. Here we show that anisotropic defects can break the C3 symmetry of graphene, leading to Dirac point drift in the Brillouin zone. Additionally, the long-range order in periodically patterned graphene can induce intervalley scattering between two inequivalent Dirac points, resulting in a semimetal-to-insulator topological phase transition. The magnitude and direction of Dirac point drift are predicted analytically, which are consistent with our first-principles electronic structure calculations. Thus, periodically patterned graphene can be used to study the fascinating physics associated with Dirac point movement and the corresponding phase transition.

Bandgap opening by patterning graphene.

Owing to its remarkable electronic and transport properties, graphene has great potential of replacing silicon for next-generation electronics and optoelectronics; but its zero bandgap associated with Dirac fermions prevents such applications. Among numerous attempts to create semiconducting graphene, periodic patterning using defects, passivation, doping, nanoscale perforation, etc., is particularly promising and has been realized experimentally. However, despite extensive theoretical investigations, the precise role of periodic modulations on electronic structures of graphene remains elusive. Here we employ both the tight-binding modeling and first-principles electronic structure calculations to show that the appearance of bandgap in patterned graphene has a geometric symmetry origin. Thus the analytic rule of gap-opening by patterning graphene is derived, which indicates that if a modified graphene is a semiconductor, its two corresponding carbon nanotubes, whose chiral vectors equal graphene's supercell lattice vectors, are both semimetals.

Origin of the variation of exciton binding energy in semiconductors.

Excitonic effects are crucial to optical properties, and the exciton binding energy E(b) in technologically important semiconductors varies from merely a few meV to about 100 meV. This large variation, however, is not well understood. We investigate the relationship between the electronic band structures and exciton binding energies in semiconductors, employing first-principles calculations based on the density functional theory and the many-body perturbation theory using Green's functions. Our results clearly show that E(b) increases as the localization of valence electrons increases due to the reduced electronic screening. Furthermore, E(b) increases in ionic semiconductors such as ZnO because, contrary to the simple two-level coupling model, it has both conduction and valence band edge states strongly localized on anion sites, leading to an enhanced electron-hole interaction. These trends are quantized by electronic structures obtained from the density functional theory; thus, our approach can be applied to understand the excitonic effects in complex semiconducting materials.