Charge self-consistent electronic structure calculations with dynamical mean-field theory usingQuantum ESPRESSO, Wannier 90andTRIQS.

We present a fully charge self-consistent implementation of dynamical mean field theory (DMFT) combined with density functional theory (DFT) for electronic structure calculations of materials with strong electronic correlations. The implementation uses theQuantum ESPRESSOpackage for the DFT calculations, theWannier90code for the up-/down-folding and theTRIQSsoftware package for setting up and solving the DMFT equations. All components are available under open source licenses, are MPI-parallelized, fully integrated in the respective packages, and use an hdf5 archive interface to eliminate file parsing. We show benchmarks for three different systems that demonstrate excellent agreement with existing DFT + DMFT implementations in otherab initioelectronic structure codes.

Prediction of a Giant Magnetoelectric Cross-Caloric Effect around a Tetracritical Point in Multiferroic SrMnO_{3}.

We study the magnetoelectric and electrocaloric response of strain-engineered, multiferroic SrMnO_{3}, using a phenomenological Landau theory with all parameters obtained from first-principles-based calculations. This allows us to make realistic semiquantitative and materials-specific predictions about the magnitude of the corresponding effects. We find that in the vicinity of a tetracritical point, where magnetic and ferroelectric phase boundaries intersect, an electric field has a huge effect on the antiferromagnetic order, corresponding to a magnetoelectric response several orders of magnitude larger than in conventional linear magnetoelectrics. Furthermore, the strong magnetoelectric coupling leads to a magnetic, cross-caloric contribution to the electrocaloric effect, which increases the overall caloric response by about 60%. This opens up new potential applications of antiferromagnetic multiferroics in the context of environmentally friendly solid state cooling technologies.

Origins of the Inverse Electrocaloric Effect.

The occurrence of the inverse (or negative) electrocaloric effect, where the isothermal application of an electric field leads to an increase in entropy and the removal of the field decreases the entropy of the system under consideration, is discussed and analyzed. Inverse electrocaloric effects have been reported to occur in several cases, for example, at transitions between ferroelectric phases with different polarization directions, in materials with certain polar defect configurations, and in antiferroelectrics. This counterintuitive relationship between entropy and applied field is intriguing and thus of general scientific interest. The combined application of normal and inverse effects has also been suggested as a means to achieve larger temperature differences between hot and cold reservoirs in future cooling devices. A good general understanding and the possibility to engineer inverse caloric effects in terms of temperature spans, required fields, and operating temperatures are thus of fundamental as well as technological importance. Here, the known cases of inverse electrocaloric effects are reviewed, their physical origins are discussed, and the different cases are compared to identify common aspects as well as potential differences. In all cases the inverse electrocaloric effect is related to the presence of competing phases or states that are close in energy and can easily be transformed with the applied field.

First principles studies of multiferroic materials.

Multiferroics, materials where spontaneous long-range magnetic and dipolar orders coexist, represent an attractive class of compounds, which combine rich and fascinating fundamental physics with a technologically appealing potential for applications in the general area of spintronics. Ab initio calculations have significantly contributed to recent progress in this area, by elucidating different mechanisms for multiferroicity and providing essential information on various compounds where these effects are manifestly at play. In particular, here we present examples of density-functional theory investigations for two main classes of materials: (a) multiferroics where ferroelectricity is driven by hybridization or purely structural effects, with BiFeO(3) as the prototype material, and (b) multiferroics where ferroelectricity is driven by correlation effects and is strongly linked to electronic degrees of freedom such as spin-, charge-, or orbital-ordering, with rare-earth manganites as prototypes. As for the first class of multiferroics, first principles calculations are shown to provide an accurate qualitative and quantitative description of the physics in BiFeO(3), ranging from the prediction of large ferroelectric polarization and weak ferromagnetism, over the effect of epitaxial strain, to the identification of possible scenarios for coupling between ferroelectric and magnetic order. For the second class of multiferroics, ab initio calculations have shown that, in those cases where spin-ordering breaks inversion symmetry (e.g. in antiferromagnetic E-type HoMnO(3)), the magnetically induced ferroelectric polarization can be as large as a few µC cm(-2). The examples presented point the way to several possible avenues for future research: on the technological side, first principles simulations can contribute to a rational materials design, aimed at identifying spintronic materials that exhibit ferromagnetism and ferroelectricity at or above room temperature. On the fundamental side, ab initio approaches can be used to explore new mechanisms for ferroelectricity by exploiting electronic correlations that are at play in transition metal oxides, and by suggesting ways to maximize the strength of these effects as well as the corresponding ordering temperatures.

Effect of epitaxial strain on the spontaneous polarization of thin film ferroelectrics.

Epitaxial strain can substantially enhance the spontaneous polarizations and Curie temperatures of ferroelectric thin films compared to the corresponding bulk materials. In this Letter we use first principles calculations to calculate the effect of epitaxial strain on the spontaneous polarization of the ferroelectrics , , and , and the multiferroic material . We show that the epitaxial strain dependence of the polarization varies considerably for the different systems, and in some cases is, in fact, very small. We discuss possible reasons for this different behavior and show that the effect of epitaxial strain can easily be understood in terms of the piezoelectric and elastic constants of the unstrained materials. Our results provide a computational tool for the quantitative prediction of strain behavior in ferroelectric thin films.