Pulsed Four-Wave Mixing at Telecom Wavelengths in Si3N4 Waveguides Locally Covered by Graphene.

Recently, the nonlinear optical response of graphene has been widely investigated, as has the integration of this 2D material onto dielectric waveguides so as to enhance the various nonlinear phenomena that underpin all-optical signal processing applications at telecom wavelengths. However, a great disparity continues to exist from these experimental reports, depending on the used conditions or the hybrid devices under test. Most importantly, hybrid graphene-based waveguides were tested under relatively low powers, and/or combined with waveguide materials that already exhibited a nonnegligible nonlinear contribution, thereby limiting the practical use of graphene for nonlinear applications. Here, we experimentally investigate the nonlinear response of Si3N4 waveguides that are locally covered by submillimeter-long graphene patches by means of pulsed degenerate four-wave mixing at telecom wavelength under 7 W peak powers. Our measurements and comparison with simulations allow us to estimate a local change of the nonlinearity sign as well as a moderate increase of the nonlinear waveguide parameter (γ∼-10 m-1W-1) provided by graphene. Our analysis also clarifies the tradeoff associated with the loss penalty and nonlinear benefit afforded by graphene patches integrated onto passive photonic circuits, thereby providing some guidelines for the design of hybrid integrated nonlinear devices, coated with graphene, or, more generally, any other 2D material.

Programmable frequency-bin quantum states in a nano-engineered silicon device.

Photonic qubits should be controllable on-chip and noise-tolerant when transmitted over optical networks for practical applications. Furthermore, qubit sources should be programmable and have high brightness to be useful for quantum algorithms and grant resilience to losses. However, widespread encoding schemes only combine at most two of these properties. Here, we overcome this hurdle by demonstrating a programmable silicon nano-photonic chip generating frequency-bin entangled photons, an encoding scheme compatible with long-range transmission over optical links. The emitted quantum states can be manipulated using existing telecommunication components, including active devices that can be integrated in silicon photonics. As a demonstration, we show our chip can be programmed to generate the four computational basis states, and the four maximally-entangled Bell states, of a two-qubits system. Our device combines all the key properties of on-chip state reconfigurability and dense integration, while ensuring high brightness, fidelity, and purity.

Photo-Thermal Tuning of Graphene Oxide Coated Integrated Optical Waveguides.

We experimentally investigate power-sensitive photo-thermal tuning (PTT) of two-dimensional (2D) graphene oxide (GO) films coated on integrated optical waveguides. We measure the light power thresholds for reversible and permanent GO reduction in silicon nitride (SiN) waveguides integrated with one and two layers of GO. For the device with one layer of GO, the power threshold for reversible and permanent GO reduction are ~20 and ~22 dBm, respectively. For the device with two layers of GO, the corresponding results are ~13 and ~18 dBm, respectively. Raman spectra at different positions of a hybrid waveguide with permanently reduced GO are characterized, verifying the inhomogeneous GO reduction along the direction of light propagation through the waveguide. The differences between the PTT induced by a continuous-wave laser and a pulsed laser are also compared, confirming that the PTT mainly depend on the average input power. These results reveal interesting features for 2D GO films coated on integrated optical waveguides, which are of fundamental importance for the control and engineering of GO's properties in hybrid integrated photonic devices.

Suppression of Parasitic Nonlinear Processes in Spontaneous Four-Wave Mixing with Linearly Uncoupled Resonators.

We report on a signal-to-noise ratio characterizing the generation of identical photon pairs of more than 4 orders of magnitude in a ring resonator system. Parasitic noise, associated with single-pump spontaneous four-wave mixing, is essentially eliminated by employing a novel system design involving two resonators that are linearly uncoupled but nonlinearly coupled. This opens the way to a new class of integrated devices exploiting the unique properties of identical photon pairs in the same optical mode.

Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators.

Efficient nonlinear phenomena in integrated waveguides imply the realization in a nonlinear material of tightly confining waveguides sustaining guided modes with a small effective area with ultra-low propagation losses as well as high-power damage thresholds. However, when the waveguide cross-sectional dimensions keep shrinking, propagation losses and the probability of failure events tend to increase dramatically. In this work, we report both the fabrication and testing of high-confinement, ultralow-loss silicon nitride waveguides and resonators showing average attenuation coefficients as low as ∼3 dB/m across the S-, C-, and L bands for 1.6-µm-width × 800-nm-height dimensions, with intrinsic quality factors approaching ∼107 in the C band. The present technology results in very high cross-wafer device performance uniformities, low thermal susceptibility, and high power damage thresholds. In particular, we developed here an optimized fully subtractive process introducing a novel chemical-physical multistep annealing and encapsulation fabrication method, resulting in high quality Si3N4-based photonic integrated circuits for energy-efficient nonlinear photonics and quantum optics.