Piezo-Potential Generation in Capacitive Flexible Sensors Based on GaN Horizontal Wires.

We report an example of the realization of a flexible capacitive piezoelectric sensor based on the assembly of horizontal c¯-polar long Gallium nitride (GaN) wires grown by metal organic vapour phase epitaxy (MOVPE) with the Boostream® technique spreading wires on a moving liquid before their transfer on large areas. The measured signal (<0.6 V) obtained by a punctual compression/release of the device shows a large variability attributed to the dimensions of the wires and their in-plane orientations. The cause of this variability and the general operating mechanisms of this flexible capacitive device are explained by finite element modelling simulations. This method allows considering the full device composed of a metal/dielectric/wires/dielectric/metal stacking. We first clarify the mechanisms involved in the piezo-potential generation by mapping the charge and piezo-potential in a single wire and studying the time-dependent evolution of this phenomenon. GaN wires have equivalent dipoles that generate a tension between metallic electrodes only when they have a non-zero in-plane projection. This is obtained in practice by the conical shape occurring spontaneously during the MOVPE growth. The optimal aspect ratio in terms of length and conicity (for the usual MOVPE wire diameter) is determined for a bending mechanical loading. It is suggested to use 60⁻120 µm long wires (i.e., growth time less than 1 h). To study further the role of these dipoles, we consider model systems with in-plane 1D and 2D regular arrays of horizontal wires. It is shown that a strong electrostatic coupling and screening occur between neighbouring horizontal wires depending on polarity and shape. This effect, highlighted here only from calculations, should be taken into account to improve device performance.

Flexible Capacitive Piezoelectric Sensor with Vertically Aligned Ultralong GaN Wires.

We report a simple and scalable fabrication process of flexible capacitive piezoelectric sensors using vertically aligned gallium nitride (GaN) wires as well as their physical principles of operation. The as-grown N-polar GaN wires obtained by self-catalyst metal-organic vapor phase epitaxy are embedded into a polydimethylsiloxane (PDMS) matrix and directly peeled off from the sapphire substrate before metallic electrode contacting. This geometry provides an efficient control of the wire orientation and an additive contribution of the individual piezoelectric signals. The device output voltage and efficiency are studied by finite element calculations for compression mechanical loading as a function of the wire geometrical growth parameters (length and density). We demonstrate that the voltage output level and sensitivity increases as a function of the wire length and that a conical shape is not mandatory for potential generation as it was the case for horizontally assembled devices. The optimal design to improve the overall device response is also optimized in terms of wire positioning inside PDMS, wire density, and total device thickness. Following the results of these calculations, we have fabricated experimental devices exhibiting outputs of several volts with a very good reliability under cyclic mechanical excitation.