Correlation between positron annihilation lifetime and photoluminescence measurements for calcined Hydroxyapatite.

Hydroxyapatite (HAp) Ca10(PO4)6(OH)2 is a compound that has stable chemical properties, composition, and an affinity for human bone. As a result, it can be used in odontology, cancer treatment, and orthopedic grafts to repair damaged bone. To produce calcined HAp at 600 °C with different pH values, a wet chemical precipitation method was employed. All synthesized HAp samples were characterized by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier-transform infrared spectroscopy (FTIR), photoluminescence (PL), Zeta potential, and positron annihilation lifetime spectroscopy (PALS). The XRD results revealed that all calcined HAp samples were formed in a hexagonal structure with a preferred (002) orientation at different pH values. The crystal size of the samples was determined using the Scherrer equation, which ranged from 16 to 25 nm. The SEM and TEM results showed that the morphology of the samples varied from nanorods to nanospheres and rice-like structures depending on the pH value of the sample. The PL measurements indicated that the blue and green emission peaks of HAp were due to defects (bulk, surface, and interface) in the samples, which created additional energy levels within the band gap. According to Zeta potential measurements, the charge carrier changed from a positive to negative value, ranging from 3.94 mV to - 2.95 mV. PALS was used to understand the relationship between the defects and the photoluminescence (PL) properties of HAp. Our results suggest that HAp nanoparticles have excellent potential for developing non-toxic biomedical and optical devices for phototherapy.

Investigating the physical and electrical properties of La2O3 via annealing of La(OH)3.

A simple technique was utilized to fabricate pure hexagonal La2O3 nanorods by utilizing lanthanum(III) nitrate hexahydrate (La(NO3)3·6H2O) and ammonia (NH4OH). The La2O3 nanoparticles were analyzed using XRD, TGA, Raman, SEM, FTIR, TEM, PL spectroscopy, and Mott-Schottky techniques. The XRD analysis confirmed the production of La(OH)3 nanorods under appropriate conditions, which were then successfully converted into La2O2CO3 and finally into La2O3 nanorods through annealing. The TGA analysis showed that the total weight loss was due to water evaporation and the dissolution of minimal moisture present in the environment. The FTIR analysis confirmed the presence of functional groups. The SEM analysis revealed changes in morphology. The TEM analysis to determine the particle size. The PL findings showed three emission peaks at 390, 520, and 698 nm due to interband transitions and defects in the samples. The Mott-Schottky analysis demonstrated that the flatband potential and acceptor density varied with annealing temperature, ranging from 1 to 1.2 V and 2 × 1018 to 1.4 × 1019 cm-3, respectively. Annealing at 1000 °C resulted in the lowest resistance to charge transfer (Rct).

Numerical simulation based performance enhancement approach for an inorganic BaZrS3/CuO heterojunction solar cell.

One of the main components of the worldwide transition to sustainable energy is solar cells, usually referred to as photovoltaics. By converting sunlight into power, they lessen their reliance on fossil fuels and the release of greenhouse gases. Because solar cells are decentralized, distributed energy systems may be developed, which increases the efficiency of the cells. Chalcogenide perovskites have drawn interest due to their potential in solar energy conversion since they provide distinctive optoelectronic characteristics and stability. But high temperatures and lengthy reaction periods make it difficult to synthesise and process them. Therefore, we present the inaugural numerical simulation using SCAPS-1D for emerging inorganic BaZrS3/CuO heterojunction solar cells. This study delves into the behaviour of diverse parameters in photovoltaic devices, encompassing efficiency (η) values, short-circuit current density (Jsc), fill factor (FF), and open-circuit voltage (Voc). Additionally, we thoroughly examine the impact of window and absorber layer thickness, carrier concentration, and bandgap on the fundamental characteristics of solar cells. Our findings showcase the attainment of the highest efficiency (η) values, reaching 27.3% for our modelled devices, accompanied by Jsc values of 40.5 mA/cm2, Voc value of 0.79 V, and FF value of 85.2. The efficiency (η) values are chiefly influenced by the combined effects of Voc, Jsc, and FF values. This optimal efficiency was achieved with CuO thickness, band gap, and carrier concentration set at 5 µm, 1.05 eV, and above 1019 cm-3, respectively. In comparison, the optimal parameters for BaZrS3 include a thickness of 1 µm, a carrier concentration below 1020 cm-3, and a band gap less than 1.6 eV. Therefore, in the near future, the present simulation will simultaneously provide up an entirely novel field for the less defective perovskite solar cell.

Assignment of the antibacterial potential of Ag2O/ZnO nanocomposite against MDR bacteria Proteus mirabilis and Salmonella typhi isolated from bone marrow transplant patients.

The rate of infectious diseases started to be one of the major mortality agents in the healthcare sector. Exposed to increased bacterial infection by antibiotic-resistant bacteria became one of the complications that occurred for bone marrow transplant patients. Nanotechnology may provide clinicians and patients with the key to overcoming multidrug-resistant bacteria. Therefore, this study was conducted to clarify the prevalence of MDR bacteria in bone marrow transplant recipients and the use of Ag2O/ZnO nanocomposites to treat participants of diarrhea brought on by MDR bacteria following bone marrow transplantation (BMT). Present results show that pathogenic bacteria were present in 100 of 195 stool samples from individuals who had diarrhea. Phenotypic, biochemical, and molecular analysis clarify that Proteus mirabilis and Salmonella typhi were detected in 21 and 25 samples, respectively. Successful synthesis of Ag2O/ZnO nanocomposites with a particle enables to inhibition of both pathogens. The maximum inhibitory impact was seen on Salmonella typhi. At low doses (10-5 g/l), it prevented the growth by 53.4%, while at higher concentrations (10-1 g/l), Salmonella typhi was inhibited by 95.5%. Regarding Proteus mirabilis, at (10-5 g/l) Ag2O/ZnO, it was inhabited by 78.7%, but at higher concentrations (10-1 g/l), it was inhibited the growth by 94.6%. Ag2O/ZnO nanocomposite was therefore found to be the most effective therapy for MDR-isolated bacteria and offered promise for the treatment of MDR bacterial infections that cause diarrhea.

Advancement of Physical and Photoelectrochemical Properties of Nanostructured CdS Thin Films toward Optoelectronic Applications.

CdS thin films were grown on an FTO substrate at different temperatures, employing the low-cost hydrothermal method. All the fabricated CdS thin films were studied using XRD, Raman spectroscopy, SEM, PL spectroscopy, a UV-Vis spectrophotometer, photocurrent, Electrochemical Impedance Spectroscopy (EIS), and Mott-Schottky measurements. According to the XRD results, all the CdS thin films were formed in a cubic (zinc blende) structure with a favorable (111) orientation at various temperatures. The Scherrer equation was used to determine the crystal size of the CdS thin films, which varied from 25 to 40 nm. The SEM results indicated that the morphology of thin films seems to be dense, uniform, and tightly attached to the substrates. PL measurements showed the typical green and red emission peaks of CdS films at 520 nm and 705 nm, and these are attributable to free-carrier recombination and sulfur vacancies or cadmium vacancies, respectively. The optical absorption edge of the thin films was positioned between 500 and 517 nm which related to the CdS band gap. For the fabricated thin films, the estimated Eg was found to be between 2.50 and 2.39 eV. According to the photocurrent measurements, the CdS thin films grown were n-type semiconductors. As indicated by EIS, resistivity to charge transfer (RCT) decreased with temperature, reaching its lowest level at 250 °C. Flat band potential and donor density were found to fluctuate with temperature, from 0.39 to 0.76 V and 4.41 × 1018 to 15.86 × 1018 cm-3, respectively, according to Mott-Schottky measurements. Our results indicate that CdS thin films are promising candidates for optoelectronic applications.

Correction: Controlling barrier height and spectral responsivity of p-i-n based GeSn photodetectors via arsenic incorporation.

[This corrects the article DOI: 10.1039/D3RA00805C.].

Enhancement of Structural, Optical and Photoelectrochemical Properties of n-Cu2O Thin Films with K Ions Doping toward Biosensor and Solar Cell Applications.

n-type Cu2O thin films were grown on conductive FTO substrates using a low-cost electrodeposition method. The doping of the n-Cu2O thin films with K ions was well identified using XRD, Raman, SEM, EDX, UV-vis, PL, photocurrent, Mott-Schottky, and EIS measurements. The results of the XRD show the creation of cubic Cu2O polycrystalline and monoclinic CuO, with the crystallite sizes ranging from 55 to 25.2 nm. The Raman analysis confirmed the presence of functional groups corresponding to the Cu2O and CuO in the fabricated samples. Moreover, the samples' crystallinity and morphology change with the doping concentrations which was confirmed by SEM. The PL results show two characteristic emission peaks at 520 and 690 nm which are due to the interband transitions in the Cu2O as well as the oxygen vacancies in the CuO, respectively. Moreover, the PL strength was quenched at higher doping concentrations which reveals that the dopant K limits e-/h+ pairs recombination by trapped electrons and holes. The optical results show that the absorption edge is positioned between 425 and 460 nm. The computed Eg for the undoped and K-doped n-Cu2O was observed to be between 2.39 and 2.21 eV. The photocurrent measurements displayed that the grown thin films have the characteristic behavior of n-type semiconductors. Furthermore, the photocurrent is enhanced by raising the doped concentration, where the maximum value was achieved with 0.1 M of K ions. The Mott-Schottky measurements revealed that the flat band potential and donor density vary with a doping concentration from -0.87 to -0.71 V and 1.3 × 1017 to 3.2 × 1017 cm-3, respectively. EIS shows that the lowest resistivity to charge transfer (Rct) was attained at a 0.1 M concentration of K ions. The outcomes indicate that doping n-Cu2O thin films are an excellent candidate for biosensor and photovoltaic applications.

SCAPS simulation of novel inorganic ZrS2/CuO heterojunction solar cells.

ZrS2 is transition metal dichalcogenides (TMDCs) which is believed one of the most talented applicants to fabricate photovoltaics. Therefore, we present here for the first-time numerical simulation of novel inorganic ZrS2/CuO heterojunction solar cells employing SCAPS-1D. The influence of the thickness, carrier concentration, and bandgap for both the window and absorber layers on the solar cell fundamental parameters was explored intensely. Our results reveal that the solar cell devices performance is mainly affected by many parameters such as the depletion width (Wd), built-in voltage (Vbi), collection length of charge carrier, the minority carrier lifetime, photogenerated current, and recombination rate. The η of 23.8% was achieved as the highest value for our simulated devices with the Voc value of 0.96 V, the Jsc value of 34.2 mA/cm2, and the FF value of 72.2%. Such efficiency was obtained when the CuO band gap, thickness, and carrier concentration were 1.35 eV, 5.5 µm, and above 1018 cm-3, respectively, and for the ZrS2 were 1.4 eV, 1 µm, and less than 1020 cm-3, respectively. Our simulated results indicate that the inorganic ZrS2/CuO heterojunction solar cells are promising to fabricate low-cost, large-scale, and high-efficiency photovoltaic devices.

Controlling barrier height and spectral responsivity of p-i-n based GeSn photodetectors via arsenic incorporation.

GeSn compounds have made many interesting contributions in photodetectors (PDs) over the last ten years, as they have a detection limit in the NIR and mid-IR region. Sn incorporation in Ge alters the cut off wavelength. In the present article, p-i-n structures based on GeSn junctions were fabricated to serve as PDs. Arsine (As) is incorporated to develop n-GeSn compounds via a metal induced crystallization (MIC) process followed by i-GeSn on p-Si wafers. The impact of As and Sn doping on the strain characteristics of GeSn has been studied with high resolution transmission electron microscopy (HRTEM), X-ray diffraction and Raman spectroscopy analyses. The direct transitions and tuning of their band energies have been investigated using diffuse reflectance UV-vis spectroscopy and photoluminescence (PL). The barrier height and spectral responsivity have been controlled with incorporation of As. Variation of As incorporation into GeSn Compounds shifted the Raman peak and hence affected the strain in the Ge network. UV-vis spectroscopy showed that the direct transition energies are lowered as the Ge-As bonding increases as illustrated in Raman spectroscopy investigations. PL and UV-vis spectroscopy of annealed heterostructures at 500 °C showed that there are many transition peaks from the UV to the NIR region as result of oxygen vacancies in the Ge network. The calculated diode parameters showed that As incorporation leads to an increase of the height barrier and thus dark current. Spectral response measurements show that the prepared heterojunctions have spectral responses in near UV and NIR regions that gives them opportunities in UV and NIR photodetection-applications.

Unveiling Crystal Orientation in Quasi-2D Perovskite Films by In Situ GIWAXS for High-Performance Photovoltaics.

Quasi-2D perovskites are enchanting alternative materials for solar cells due to their intrinsic stability. The manipulation of crystal orientation of quasi-2D perovskites is indispensable to target efficient devices, however, the origin of orientation during the film fabrication process still lacks in-depth understanding and convincing evidence yet, which hinders further boosting the performance of photovoltaic devices. Herein, the crystallizing processes during spin-coating and annealing are probed by in situ grazing-incidence wide-angle X-ray scattering (GIWAXS), and the incident-angle-dependent GIWAXS is conducted to unveil the phase distribution in the films. It is found that undesirable lead iodide sol-gel formed intermediate phase would disturb oriented crystalline growth, resulting in random crystal orientation in poor quasi-2D films. A general strategy is developed via simple additive agent incorporation to suppress the formation of the intermediate phase. Accordingly, highly oriented perovskite films with reduced trap density and higher carrier mobility are obtained, which enables the demonstration of optimized quasi-2D perovskite solar cells with a power conversion efficiency of 15.2% as well as improved stability. This work paves a promising way to manipulate the quasi-2D perovskites nucleation and crystallization processes via tuning nucleation stage.

Zinc oxide nanostructures as a control strategy of bacterial speck of tomato caused by Pseudomonas syringae in Egypt.

This study was conducted to evaluate the ability of zinc oxide nanoparticles (ZONPs) with unique properties to protect tomato against the bacterial speck pathogen, caused by Pseudomonas syringae pv. tomato DC3000 (Pst). Protection of tomato against bacterial speck using ZONPS was evaluated by its direct antibacterial activity and its ability for inducing resistance in tomato plants. The results revealed that ZONPs showed significant direct antibacterial activity against Pseudomonas syringae pv. tomato under laboratory conditions. Moreover, tomato plants treated with ZONPs showed a significant reduction in disease severity and bacterial proliferation relative to non-treated plants. Furthermore, tomato plants treated with ZONPs showed higher self-defense enzyme activity relative to untreated plants. The regulatory and defense genes, LePR-1a and Lipoxygenase (LOX), involved in the salicylic acid (SA) and (JA) signaling pathways, respectively, were highly expressed in tomato plants treated with ZONPs compared to untreated plants. Growth characters of tomato plants treated with ZONPs were significantly enhanced relative to untreated plants. The control of bacterial speck pathogen of tomato using ZONPs through its direct antibacterial and by developing of systemic resistance in treated tomatoes against the pathogen is considered the first report.