Performance-Enhanced Non-Enzymatic Glucose Sensor Based on Graphene-Heterostructure.

Non-enzymatic glucose sensing is a crucial field of study because of the current market demand. This study proposes a novel design of glucose sensor with enhanced selectivity and sensitivity by using graphene Schottky diodes, which is composed of graphene (G)/platinum oxide (PtO)/n-silicon (Si) heterostructure. The sensor was tested with different glucose concentrations and interfering solutions to investigate its sensitivity and selectivity. Different structures of the device were studied by adjusting the platinum oxide film thickness to investigate its catalytic activity. It was found that the film thickness plays a significant role in the efficiency of glucose oxidation and hence in overall device sensitivity. 0.8-2 µA output current was obtained in the case of 4-10 mM with a sensitivity of 0.2 A/mM.cm2. Besides, results have shown that 0.8 A and 15 A were obtained by testing 4 mM glucose on two different PtO thicknesses, 30 nm and 50 nm, respectively. The sensitivity of the device was enhanced by 150% (i.e., up to 30 A/mM.cm2) by increasing the PtO layer thickness. This was attributed to both the increase of the number of active sites for glucose oxidation as well as the increase in the graphene layer thickness, which leads to enhanced charge carriers concentration and mobility. Moreover, theoretical investigations were conducted using the density function theory (DFT) to understand the detection method and the origins of selectivity better. The working principle of the sensors puts it in a competitive position with other non-enzymatic glucose sensors. DFT calculations provided a qualitative explanation of the charge distribution across the graphene sheet within a system of a platinum substrate with D-glucose molecules above. The proposed G/PtO/n-Si heterostructure has proven to satisfy these factors, which opens the door for further developments of more reliable non-enzymatic glucometers for continuous glucose monitoring systems.

Influence of Humidity on Contact Resistance in Graphene Devices.

The electrical contact resistance at metal-graphene interfaces can significantly degrade the properties of graphene devices and is currently hindering the full exploitation of graphene's potential. Therefore, the influence of environmental factors, such as humidity, on the metal-graphene contact resistance is of interest for all graphene devices that operate without hermetic packaging. We experimentally studied the influence of humidity on bottom-contacted chemical-vapor-deposited (CVD) graphene-gold contacts, by extracting the contact resistance from transmission line model (TLM) test structures. Our results indicate that the contact resistance is not significantly affected by changes in relative humidity (RH). This behavior is in contrast to the measured humidity sensitivity [Formula: see text] of graphene's sheet resistance. In addition, we employ density functional theory (DFT) simulations to support our experimental observations. Our DFT simulation results demonstrate that the electronic structure of the graphene sheet on top of silica is much more sensitive to adsorbed water molecules than the charge density at the interface between gold and graphene. Thus, we predict no degradation of device performance by alterations in contact resistance when such contacts are exposed to humidity. This knowledge underlines that bottom-contacting of graphene is a viable approach for a variety of graphene devices and the back end of the line integration on top of conventional integrated circuits.

Resistive graphene humidity sensors with rapid and direct electrical readout.

We demonstrate humidity sensing using a change of the electrical resistance of single-layer chemical vapor deposited (CVD) graphene that is placed on top of a SiO2 layer on a Si wafer. To investigate the selectivity of the sensor towards the most common constituents in air, its signal response was characterized individually for water vapor (H2O), nitrogen (N2), oxygen (O2), and argon (Ar). In order to assess the humidity sensing effect for a range from 1% relative humidity (RH) to 96% RH, the devices were characterized both in a vacuum chamber and in a humidity chamber at atmospheric pressure. The measured response and recovery times of the graphene humidity sensors are on the order of several hundred milliseconds. Density functional theory simulations are employed to further investigate the sensitivity of the graphene devices towards water vapor. The interaction between the electrostatic dipole moment of the water and the impurity bands in the SiO2 substrate leads to electrostatic doping of the graphene layer. The proposed graphene sensor provides rapid response direct electrical readout and is compatible with back end of the line (BEOL) integration on top of CMOS-based integrated circuits.