ABSTRACT
The purpose of this paper is to study the effect of PbO doping of multicomponent composite glass-like ceramics based on TeO2, WO3, Bi2O3, MoO3, and SiO2, which are one of the promising materials for gamma radiation shielding. According to X-ray diffraction data, it was found that the PbO dopant concentration increase from 0.10 to 0.20-0.25 mol results in the initialization of the phase transformation and structural ordering processes, which are expressed in the formation of SiO2 and PbWO4 phases, and the crystallinity degree growth. An analysis of the optical properties showed that a change in the ratio of the contributions of the amorphous and ordered fractions leads to the optical density increase and the band gap alteration, as well as a variation in the optical characteristics. During the study of the strength and mechanical properties of the synthesized ceramics, depending on the dopant concentration, it was found that when inclusions in the form of PbWO4 are formed in the structure, the strength characteristics increase by 70-80% compared to the initial data, which indicates the doping efficiency and a rise in the mechanical strength of ceramics to external influences. During evaluation of the shielding protective characteristics of the synthesized ceramics, it was revealed that the formation of PbWO4 in the structure results in a rise in the high-energy gamma ray absorption efficiency.
ABSTRACT
This article considers the effect of MoO3 and SiO additives in telluride glasses on the shielding characteristics and protection of electronic microcircuits operating under conditions of increased radiation background or cosmic radiation. MoO3 and SiO dopants were chosen because their properties, including their insulating characteristics, make it possible to avoid breakdown processes caused by radiation damage. The relevance of the study consists in the proposed method of using protective glasses to protect the most important components of electronic circuits from the negative effects of ionizing radiation, which can cause failures or lead to destabilization of the electronics. Evaluation of the shielding efficiency of gamma and electron radiation was carried out using a standard method for determining the change in the threshold voltage (∆U) value of microcircuits placed behind the shield and subjected to irradiation with various doses. It was established that an increase in the content of MoO3 and SiO in the glass structure led to an increase of up to 90% in the gamma radiation shielding efficiency, while maintaining the stability of microcircuit performance under prolonged exposure to ionizing radiation. The results obtained allow us to conclude that the use of protective glasses based on TeO2-WO3-Bi2O3-MoO3-SiO is highly promising for creating local protection for the main components of microcircuits and semiconductor devices operating under conditions of increased background radiation or cosmic radiation.
ABSTRACT
Zinc gallate (ZnGa2O4) spinel ceramics doped with Mn2+ ions was prepared by a solid-state reaction at 1200 °C in air. Manganese concentration was equal to 0.05 mol.% of MnO with respect to ZnO. Ceramics produced in this way show an efficient green emission at about 505 nm under UV or X-ray excitations, which is caused by Mn2+ ions. This green emission is observed also as a relatively long afterglow (visible to the naked eye in the dark for about one hour) after switching-off the X-ray excitation. Time profiles of the beginning of glow and afterglow have been studied together with thermally stimulated (TSL) and optically stimulated (OSL) luminescence. Experimental results demonstrate a presence of few types of shallow and deep traps responsible for the observed afterglow and TSL/OSL emission of the material. The possibility of pulsed optical stimulation and time-resolved OSL characteristics of ZnGa2O4: Mn2+ has been reported for the first time. The presented results suggest the ZnGa2O4: Mn2+ spinel as a promising material for further fundamental research and possibility of application as a green long-lasting phosphor or storage phosphor for TSL/OSL radiation dosimetry.
