ABSTRACT
We demonstrate the integration of a wet-chemically etched surface relief on a vertical-cavity surface-emitting laser (VCSEL) emitting in the red spectral range for higher-order mode suppression. With this relief, fundamental-mode emission is achieved over the entire power range from threshold beyond thermal rollover. For collimation of the emitted beam, we implement polymer microlenses fabricated on-chip by a thermal reflow technique. We reduce the angle of divergence for all injected currents to a maximum of 2∘. By measuring high-resolution spectra, we show that Gaussian beam profiles correspond to pure fundamental-mode emission which is preserved after implementation of the polymer microlens onto the etched relief, proving the compatibility of the two processes.
ABSTRACT
Triggered, indistinguishable single photons are crucial in various quantum photonic implementations. Here, we realize a novel n+-i-n++ diode structure embedding semiconductor quantum dots: the gated device enables spectral tuning of the transitions and deterministic control of the charged states. Blinking-free single-photon emission and high two-photon indistinguishability are observed. The line width's temporal evolution is investigated across over 6 orders of magnitude time scales, combining photon-correlation Fourier spectroscopy, high-resolution photoluminescence spectroscopy, and two-photon interference (visibility of VTPI,2ns = (85.8 ± 2.2)% and VTPI,9ns = (78.3 ± 3.0)%). Most of the dots show no spectral broadening beyond â¼9 ns time scales, and the photons' line width ((420 ± 30) MHz) deviates from the Fourier-transform limit by a factor of 1.68. The combined techniques verify that most dephasing mechanisms occur at time scales ≤2 ns, despite their modest impact. The presence of n-doping implies higher carrier mobility, enhancing the device's appeal for high-speed tunable, high-performance quantum light sources.
