1.
Phys Rev Lett
; 100(25): 256404, 2008 Jun 27.
Article
in English
| MEDLINE
| ID: mdl-18643684
ABSTRACT
Theoretical predictions about the n-type conductivity in nitride semiconductors are discussed in the light of results of a high-frequency EPR an ENDOR study. It is shown that two types of effective-mass-like, shallow donors with a delocalized wave function exist in unintentionally doped AlN. The experiments demonstrate how the transformation from a shallow donor to a deep (DX) center takes place and how the deep DX center can be reconverted into a shallow donor forming a spin triplet and singlet states.