ABSTRACT
In this paper, we present highly efficient continuous-wave (cw) laser operation of Tm:YAG and Tm:LuAG lasers pumped by high-brightness red tapered diodes. The single-emitter tapered diode lasers (TDLs) provide up to 1 W of pump power around 680 nm. By adjusting the operation temperature of the TDL, the pump central wavelength could be matched to the strong absorption peak of Tm3+ ions in this region (H63âF33 excitation). This absorption peak is around threefold stronger than the usually employed 785 nm transition (H63âH34). In the cw laser experiments, we have achieved slope efficiencies exceeding 55% at room temperature, which is far above the Stokes limited slope efficiency (34%), indicating presence of a strong two-for-one cross-relaxation process. Pumping with high-brightness tapered diode lasers further facilitated usage of smaller pump spots (enabling quite low lasing thresholds) and generation of near-diffraction limited output beam profiles from standard z-type cavities. To the best of our knowledge, this is the first report of diode pumping of Tm-doped solid-state lasers around 680 nm as well as the first usage of TDLs as pump sources in Tm-doped laser systems.
ABSTRACT
The cascading of nonlinear crystals has been established as a simple method to greatly increase the conversion efficiency of single-pass second-harmonic generation compared to a single-crystal scheme. Here, we show for the first time that the technique can be extended to sum frequency generation, despite differences in the phase relations of the involved fields. An unprecedented 5.5 W of continuous-wave diffraction-limited green light is generated from the single-pass sum frequency mixing of two diode lasers in two periodically poled nonlinear crystals (conversion efficiency 50%). The technique is generally applicable and can be applied to any combination of fundamental wavelengths and nonlinear crystals.
ABSTRACT
A compact handheld probe for shifted-excitation Raman difference spectroscopy (SERDS) with an implemented dual-wavelength diode laser with an emission at 785 nm is presented. The probe is milled from aluminum and has dimensions 100 × 28 × 12 mm. The diode laser provides two excitation lines with a spectral distance of 10 cm(-1) (0.62 nm), has a spectral width smaller than 11 pm, and reaches an optical power of 120 mW ex probe. Raman experiments were carried out using polystyrene (PS) as the test sample. During a measurement time of over 1 h, a stable spectral center position of the Raman line at 999 cm(-1) of PS was achieved within a spectral window of 0.1 cm(-1). Here, the Raman intensity of this line was observed with a peak-to-peak variation smaller than ±2%, dominated by shot noise interference. A deviation of the center position of a Raman line with <±1 cm(-1) was observed over the whole excitation power range. Raman investigations of the quartz glass window of the SERDS probe showed minor interference. The results demonstrate the suitability of the developed handheld probe for Raman investigations and the application of in situ SERDS experiments to fields such as food safety control, medical diagnostics, and process control.
ABSTRACT
We present micro-integrated diode laser modules operating at wavelengths of 767 and 780 nm for cold quantum gas experiments on potassium and rubidium. The master-oscillator-power-amplifier concept provides both narrow linewidth emission and high optical output power. With a linewidth (10 µs) below 1 MHz and an output power of up to 3 W, these modules are specifically suited for quantum optics experiments and feature the robustness required for operation at a drop tower or on-board a sounding rocket. This technology development hence paves the way toward precision quantum optics experiments in space.
ABSTRACT
We present the capability of shifted excitation Raman difference spectroscopy (SERDS) under ambient daylight. A dual-wavelength diode laser emitting at 785 nm is used as the excitation light source. The monolithic diode laser provides more than 110 mW in cw operation. Both excitation lines show an emission width ≤0.2 cm(-1) and a spectral distance of 10 cm(-1) as targeted for SERDS. Polystyrene (PS) is used as the test sample and ambient daylight to generate real-world background interference. Here, a broadband background signal with narrowband absorption lines from water vapor and Fraunhofer lines from singly ionized calcium (Ca II) obscure the Raman lines of PS. SERDS clearly separates the Raman signals from the background signals with a 13-fold improvement in signal-to-background noise.
ABSTRACT
We present a compact, ultra-narrow-linewidth semiconductor laser based on a 780 nm distributed feedback diode laser optically self-locked to a mode of an external monolithic confocal Fabry-Perot resonator. We characterize spectral properties of the laser by measuring its frequency noise power spectral density. The white frequency noise levels at 5 Hz(2)/Hz above a Fourier frequency as small as 20 kHz. This noise level is more than five orders of magnitude smaller than the noise level of the same solitary diode laser without resonant optical feedback, and it is three orders of magnitude smaller than the noise level of a narrow linewidth, grating-based, extended-cavity diode laser. The corresponding Lorentzian linewidth of the laser with resonant optical feedback is 15.7 Hz at an output power exceeding 50 mW.
ABSTRACT
A self-optimizing approach to intra-cavity spectral shaping of external cavity mode-locked semiconductor lasers using edge-emitting multi-section diodes is presented. An evolutionary algorithm generates spectrally resolved phase- and amplitude masks that lead to the utilization of a large part of the net gain spectrum for mode-locked operation. Using these masks as a spectral amplitude and phase filter, a bandwidth of the optical intensity spectrum of 3.7 THz is achieved and Fourier-limited pulses of 216 fs duration are generated after further external compression.
ABSTRACT
We present a simple method to accurately measure the frequency noise power spectrum of lasers. It relies on creating the beat note between two lasers, capturing the corresponding signal in the time domain, and appropriately postprocessing the data to derive the frequency noise power spectrum. In contrast to methods already established, it does not require stabilization of the laser to an optical reference, i.e., a second laser, to an optical cavity or to an atomic transition. It further omits a frequency discriminator and hence avoids bandwidth limitation and nonlinearity effects common to high-resolution frequency discriminators.
ABSTRACT
We analyze the influence of second and third order intracavity dispersion on a passively mode-locked diode laser by introducing a spatial light modulator (SLM) into the external cavity. The dispersion is optimized for chirped pulses with highest possible spectral bandwidth that can be externally compressed to the sub picosecond range. We demonstrate that the highest spectral bandwidth is achieved for a combination of second and third order dispersion. With subsequent external compression pulses with a duration of 437 fs are generated.
ABSTRACT
A spectrally tunable, narrow linewidth master oscillator power amplifier system emitting ns pulses with high peak power is presented. The master oscillator is a distributed feedback ridge waveguide (DFB-RW) laser, which is operated in continuous wave (CW) mode and emits at about 975 nm with a spectral line width below 10 pm. The oscillator can be tuned over a range of 0.9 nm by varying the injection current. The tapered amplifier (TA) consists of an RW section and a flared gain-guided section. The RW section of the amplifier acts as an optical gate and converts the CW input beam emitted by the DFB-RW laser into a train of short optical pulses, which are subsequently amplified by the tapered section. The width of the pulses is 8 ns at a repetition rate of 25 kHz. The peak power is 16.3 W. The TA preserves the spectral properties of the emission of the DBR-RW laser. The amplified spontaneous emission is suppressed by about 40 dB.
ABSTRACT
A dual-wavelength Y-branch distributed Bragg reflector (DBR) diode laser at 785 nm is presented as an excitation light source for shifted excitation Raman difference spectroscopy (SERDS). The monolithic device was realized with deeply etched surface DBR gratings using one-step epitaxy. An optical output power of 140 mW was obtained in continuous-wave (CW) operation for each laser cavity, with emission wavelengths of the device at 784.50 and 785.12 nm. A spectral width of the laser emission of 30 pm (0.5 cm(-1)), including 95% of optical power, was measured. The mean spectral distance of both excitation lines is 0.63 nm (10.2 cm(-1)) over the whole operating range. Raman experiments using polystyrene as the test sample and ambient light as the interference source were carried out and demonstrate the suitability of the dual-wavelength diode laser for SERDS.
ABSTRACT
We present a micro-integrated, extended cavity diode laser module for space-based experiments on potassium Bose-Einstein condensates and atom interferometry. The module emits at the wavelength of the potassium D2-line at 766.7 nm and provides 27.5 GHz of continuous tunability. It features sub-100 kHz short term (100 µs) emission linewidth. To qualify the extended cavity diode laser module for quantum optics experiments in space, vibration tests (8.1 g(RMS) and 21.4 g(RMS)) and mechanical shock tests (1500 g) were carried out. No degradation of the electro-optical performance was observed.
ABSTRACT
We present a method of the generation of sub-100 ps pulses with an all-semiconductor master oscillator-power amplifier (MOPA) system, consisting of a three section distributed Bragg reflector (DBR) laser as MO and a two section tapered PA. The pulses generated by the gain-switched DBR laser are first shortened by the ridge-waveguide input section of the PA acting as a saturable absorber and then amplified by the tapered gain region section. We generate laser pulses with a minimum duration of 35 ps and a peak power of more than 65 W. The spectral width is less than 0.25 nm around a center wavelength of 1063 nm.
ABSTRACT
In order to increase the power of visible diode laser systems in an efficient manner, we propose spectral beam combining with subsequent sum-frequency generation. We show that this approach, in comparison with second harmonic generation of single emitters, can enhance the available power significantly. By combining two distributed Bragg reflector tapered diode lasers we achieve a 2.5-3.2 fold increase in power and a maximum of 3.9 W of diffraction-limited green light. At this power level, green diode laser systems have a high application potential, e.g., within the biomedical field. Our concept can be expanded combining multiple diode lasers to increase the power even further.
ABSTRACT
We present results on a monolithic semiconductor-based master-oscillator power amplifier (MOPA) combining a distributed-feedback (DFB) laser and a tapered amplifier on a single chip. The MOPA reaches an output power of almost 12 W at an emission wavelength around 1064 nm in continuous-wave operation. Pulses with a length of around 100 ps can be obtained either by injecting nanosecond current pulses into the tapered amplifier alone or into both the DFB laser and the tapered amplifier. In the latter case, pulses with a width of 84 ps, a peak power of 42 W, and a spectral width of 160 pm are generated.
ABSTRACT
We report on a diode-pumped Yb:KGW (ytterbium-doped potassium gadolinium tungstate) laser with a repetition rate of 4.8 GHz and a pulse duration of 396 fs. Stable fundamental modelocking is achieved with a semiconductor saturable absorber mirror (SESAM). The average output power of this compact diode-pumped solid state laser is 1.9 W which corresponds to a peak power of 0.9 kW and the optical-to-optical efficiency is 36%. To the best of our knowledge, this is the femtosecond DPSSL with the highest repetition rate ever reported so far.
ABSTRACT
Direct sub-50-fs pulse generation is demonstrated with a mode-locked Yb:YCa4O(BO3)3 laser. With external compression, pulses as short as 35 fs are generated at 1055 nm. The oscillator operating at a repetition rate of 95 MHz is pumped by a two-section distributed Bragg reflector tapered diode laser and mode locked by a semiconductor saturable absorber mirror. The onset of self-Raman-conversion for pulse spectral bandwidths exceeding 40 nm (FWHM) is observed.
ABSTRACT
We measure the temperature distribution of a 3 cm long periodically poled LiNbO3 crystal in a single-pass second harmonic generation (SHG) setup at 488 nm. By means of three resistance heaters and directly mounted Pt100 sensors the crystal is subdivided in three sections. 9.4 W infrared pump light and 1.3 W of SHG light cause a de-homogenized temperature distribution of 0.2 K between the middle and back section. A sectional offset heating is used to homogenize the temperature in those two sections and thus increasing the conversion efficiency. A 15% higher SHG output power matching the prediction of our theoretical model is achieved.
ABSTRACT
We report compact, low-cost and efficient Cr:Colquiriite lasers that are pumped by high brightness tapered laser diodes. The tapered laser diodes provided 1 to 1.2 W of output power around 675 nm, at an electrical-to-optical conversion efficiency of about 30%. Using a single tapered diode laser as the pump source, we have demonstrated output powers of 500 mW and 410 mW together with slope efficiencies of 47% and 41% from continuous wave (cw) Cr:LiSAF and Cr:LiCAF lasers, respectively. In cw mode-locked operation, sub-100-fs pulse trains with average power between 200 mW and 250 mW were obtained at repetition rates around 100 MHz. Upon pumping the Cr:Colquiriite lasers with two tapered laser diodes (one from each side of the crystal), we have observed scaling of cw powers to 850 mW in Cr:LiSAF and to 650 mW in Cr:LiCAF. From the double side pumped Cr:LiCAF laser, we have also obtained ~220 fs long pulses with 5.4 nJ of pulse energy at 77 MHz repetition rate. These are the highest energy levels reported from Cr:Colquiriite so far at these repetition rates. Our findings indicate that tapered diodes in the red spectral region are likely to become the standard pump source for Cr:Colquiriite lasers in the near future. Moreover, the simplified pumping scheme might facilitate efficient commercialization of Cr:Colquiriite systems, bearing the potential to significantly boost applications of cw and femtosecond lasers in this spectral region (750-1000 nm).
ABSTRACT
For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.
