ABSTRACT
Appraising the bandgap energy of materials is a major issue in the field of band engineering. To better understand the behavior of GaAs1-uNu material, it is necessary to improve the applied calculation methodologies. The band anticrossing model (BAC) allows modeling of the bandgap energy when diluted nitrogen is incorporated into the material. The model can be improved using artificial neural networks (ANN) as an alternative solution, which is rarely applied. Our goal is to study the efficiency of the (ANN) method to gauge the bandgap energy of the material from experimental measurements, considering the extensive strain due to the lattice mismatch between the substrate and the material. This makes the GaAsN material controllable with (ANN) method, and is a potential candidate for the fabrication of ultrafast optical sensors.
ABSTRACT
We have investigated the piezoreflectance spectra (deltaR/R) of the 1s Z12 exciton in single crystals of copper bromide CuBr at the temperature of 95 K with linearly polarized light. The spectra were successively studied with the pressure p along the [001] and [111] axis and the wave vector k of the incident light parallel to the [110] direction. The shear deformation potentials b and d of the 1s Z12 exciton were deduced from the stress-induced shift and splitting. The results are compared with those obtained in other works.
