ABSTRACT
Inducing a large refractive-index change is the holy grail of reconfigurable photonic structures, a goal that has long been the driving force behind the discovery of new optical material platforms. Recently, the unprecedentedly large refractive-index contrast between the amorphous and crystalline states of Ge-Sb-Te (GST)-based phase-change materials (PCMs) has attracted tremendous attention for reconfigurable integrated nanophotonics. Here, we introduce a microheater platform that employs optically transparent and electrically conductive indium-tin-oxide (ITO) bridges for the fast and reversible electrical switching of the GST phase between crystalline and amorphous states. By the proper assignment of electrical pulses applied to the ITO microheater, we show that our platform allows for the registration of virtually any intermediate crystalline state into the GST film integrated on the top of the designed microheaters. More importantly, we demonstrate the full reversibility of the GST phase between amorphous and crystalline states. To show the feasibility of using this hybrid GST/ITO platform for miniaturized integrated nanophotonic structures, we integrate our designed microheaters into the arms of a Mach-Zehnder interferometer to realize electrically reconfigurable optical phase shifters with orders of magnitude smaller footprints compared to existing integrated photonic architectures. We show that the phase of optical signals can be gradually shifted in multiple intermediate states using a structure that can potentially be smaller than a single wavelength. We believe that our study showcases the possibility of forming a whole new class of miniaturized reconfigurable integrated nanophotonics using beyond-binary reconfiguration of optical functionalities in hybrid PCM-photonic devices.
ABSTRACT
An integrated photonic platform is proposed for strong interactions between atomic beams and annealing-free high-quality-factor (Q) microresonators. We fabricated a thin-film, air-clad SiN microresonator with a loaded Q of 1.55×106 around the optical transition of 87Rb at 780 nm. This Q is achieved without annealing the devices at high temperatures, enabling future fully integrated platforms containing optoelectronic circuitry. The estimated single-photon Rabi frequency (2g) is 2π×64MHz 100 nm above the resonator. Our simulation result indicates that miniature atomic beams with a longitudinal speed of 0.2 m/s to 30 m/s will interact strongly with our resonator, allowing for the detection of single-atom transits and realization of scalable single-atom photonic devices. Interactions between racetrack resonators and thermal atomic beams are also simulated.
ABSTRACT
A systematic dispersion engineering approach is presented toward designing a III-nitride micro-resonator for a blue frequency comb. The motivation for this endeavor is to fill the need for compact, coherent, multi-wavelength photon sources that can be paired with, e.g., the 171Yb+ ion in a photonic integrated chip for optical sensing, time-keeping, and quantum computing applications. The challenge is to overcome the normal material dispersion exhibited by the otherwise ideal (i.e., low-loss and large-Kerr-coefficient) AlGaN family of materials, as this is a prerequisite for bright-soliton Kerr comb generation. The proposed approach exploits the avoided-crossing phenomenon in coupled waveguides to achieve strong anomalous dispersion in the desired wavelength range. The resulting designs reveal a wide range of dispersion response tunability, which is expected to allow access to the near-UV wavelength regime as well. Numerical simulations of the spatio-temporal evolution of the intra-cavity field under continuous-wave laser pumping confirm that such a structure is capable of generating a broadband blue bright-soliton Kerr frequency comb. The proposed micro-resonator heterostructure is amenable to the current state-of-the-art growth and fabrication methods for AlGaN semiconductors.
