1.
Phys Rev Lett
; 84(4): 690-3, 2000 Jan 24.
Article
in English
| MEDLINE
| ID: mdl-11017348
ABSTRACT
An H plasma has a remarkable effect on dislocation mobility in silicon, reducing its activation energy to 1.2 eV. Applying density functional theory to the interactions of H and H2 with the core of the 90 degrees partial dislocation in Si, we have identified a path for motion involving kink formation and migration at hydrogenated core bonds which conforms exactly to the experimentally measured activation energy.
2.