ABSTRACT
Semiconducting membrane combined with nanomaterials is an auspicious combination that may successfully eliminate diverse waste products from water while consuming little energy and reducing pollution. Creating an inexpensive, steady, flexible, and diversified business material for membrane production is a critical challenge in membrane technology development. Because of its unusual structure and high catalytic activity, graphitic carbon nitride (g-C3N4) has come out as a viable material for membranes. Furthermore, their great durability, high permanency under challenging environments, and long-term use without decrease in flux are significant advantages. The advanced material techniques used to manage the molecular assembly of g-C3N4 for separation membrane were detailed in this review work. The progress in using g-C3N4-based membranes for water treatment has been detailed in this presentation. The review delivers an updated description of g-C3N4 based membranes and their separation functions and new ideas for future enhancements/adjustments to address their weaknesses in real-world situations. Finally, the ongoing problems and promising future research directions for g-C3N4-based membranes are discussed.
ABSTRACT
The half-Heusler alloys have not only been recognized for spintronic and memory devices but also for thermoelectric applications. In this research work, the detailed study for thermoelectric parameters of RuCrX (X = Si, Ge, Sn) half-Heusler alloys has been carried out by using the pseudopotential approach alongside the Boltzmann transport theory. The RuCrX (X= Si, Ge, Sn) was reported stable in C1 b -type structure by means of energy-volume optimization, elastic stability criteria, positive phonon frequencies in phonon dispersion curves, and formation energies. The all important thermoelectric properties of these alloys have not yet been explored. The thermoelectric properties such as Seebeck coefficient, electronic part of thermal conductivity, electrical conductivity, and power factor have been discussed within a specific temperature range (300-1200 K). The calculated value of the power factor was found to be 5.11 × 1011 W/(m K2 s) for RuCrSi, 3.42 × 1011 W/(m K2 s) for RuCrGe, and 1.85 × 1011 W/(m K2 s) for RuCrSn at 1200 K.
ABSTRACT
Zinc sulfide (ZnS) thin films with variable structural, optical, electrical, and thermoelectric properties were obtained by changing the source-to-substrate (SSD) distance in the physical-vapor-thermal-coating (PVTC) system. The films crystallized into a zinc-blende cubic structure with (111) preferred orientation. The films had a wide 3.54 eV optical band gap. High-quality homogenous thin films were obtained at 60 mm SSD. The sheet resistance and resistivity of the films decreased from 1011 to 1010 Ω/Sq. and from 106 to 105 Ω-cm, when SSD was increased from 20 mm to 60 mm, respectively. The phase and band gap were also verified by first principles that were in agreement with the experimental results. Thermoelectric characteristics were studied by using the semi-classical Boltzmann transport theory. The high quality, wide band gap, and reduced electrical resistance make ZnS a suitable candidate for the window layer in solar cells.
ABSTRACT
Silicon nanowires (SiNWs) were fabricated by the electroless etching of an n-type Si (100) wafer in HF/AgNO3. Vertically aligned and high-density SiNWs are formed on the Si substrates. Various shapes of SiNWs are observed, including round, rectangular, and triangular. The recorded maximum reflectance of the SiNWs is approximately 19.2%, which is much lower than that of the Si substrate (65.1%). The minimum reflectance of the SiNWs is approximately 3.5% in the near UV region and 9.8% in the visible to near IR regions. The calculated band gap energy of the SiNWs is found to be slightly higher than that of the Si substrate. The I-V characteristics of a freestanding SiNW show a linear ohmic behavior for a forward bias up to 2.0 V. The average resistivity of a SiNW is approximately 33.94 Ω cm.
