Temperature field analysis of TiO2 films with high-absorptance inclusions.

To deduce the location of absorptive inclusions in thin films, temperature distributions in pure TiO(2) films and TiO(2) films with high-absorptance inclusions are analyzed based on temperature field theory. According to our theoretic simulations, the surface temperature rise increases when absorptive inclusions are incorporated into thin films and shows different values for different inclusions. With the increase of inclusion thickness, the surface temperature rise varies and has a maximum value. A potential method is presented to deduce the location of absorptive inclusion through calculating the surface temperature rise at two modulated frequencies, if it is possible to know in advance the inclusion material or to prejudge this from a thin-film deposition process.

Temperature field analysis of single-layer TiO2 films.

A method is presented to evaluate optical absorption at a random wavelength by calculating temperature distribution in single-layer TiO(2) films. Temperature distribution in single-layer TiO(2) films was analyzed based on temperature field theory. Through our calculations, optical absorption variation was obtained to be similar to that of surface temperature rise in films. The surface temperature rise depends on film thickness, refractive index, extinction coefficient, specific heat, and thermal conductivity. Furthermore, the optical absorptions of the same single-layer TiO(2) film at different wavelengths were deduced. As an example, the surface temperature rises were calculated for the 19 single-layer TiO(2) films, which had been prepared by 12 different laboratories for the annual meeting of the Optical Society of America in 1986. The results agree well with the measured optical absorptions.

Preparation of high laser induced damage threshold antireflection film using interrupted ion assisted deposition.

Single layers and antireflection films were deposited by electron beam evaporation, ion assisted deposition and interrupted ion assisted deposition, respectively. Antireflection film of quite high laser damage threshold (18J/cm2) deposited by interrupted ion assisted deposition were got. The electric field distribution, weak absorption, and residual stress of films and their relations to damage threshold were investigated. It was shown that the laser induced damage threshold of film was the result of competition of disadvantages and advantages, and interrupted ion assisted deposition was one of the valuable methods for preparing high laser induced damage threshold films.