ABSTRACT
We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H2/NH3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias (V DSQ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage (V th), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.
ABSTRACT
Dissociation of energy-selected c-C2H4S+ was investigated in a region of 10.6-11.8 eV with a threshold photoelectron-photoion coincidence technique and a synchrotron as a source of vacuum ultraviolet radiation. Branching ratios and average releases of kinetic energy in channels of formation of c-C2H4S+, CH3CS+, and HCS+ were obtained from well-resolved time-of-flight peaks in coincidence mass spectra. Measured average releases of kinetic energy for channel CH3CS+ + H of least energy are substantial and much greater than calculated with quasiequilibrium theory; in contrast, small releases of kinetic energy near the appearance onset for channel HCS+ + CH3 agree satisfactorily with statistical calculations. Calculations of molecular electronic structures and energetics of c-C2H4S+ and C2H3S+ isomers and various fragments and transition states were also performed with Gaussian 3 method to establish dissociation mechanisms. A predicted dissociation energy of 11.05 eV for c-C2H4S --> HCS+ + CH3 agrees with a linearly extrapolated threshold at 10.99+/-0.04 eV and a predicted dissociation mechanism that c-C2H4S+ isomerizes to CH3CHS+ before dissociating to HCS+ + CH3 supports the experimental results. The large releases of kinetic energy for channel CH3CS+ + H might result from a dissociation mechanism according to which c-C2H4S+ isomerizes to a local minimum CH3CSH+ and then dissociates through a transition state to form CH3CS+ + H.
ABSTRACT
The dissociative photoionization of CH2Br2 in a region approximately 10-24 eV was investigated with photoionization mass spectroscopy using a synchrotron radiation source. An adiabatic ionization energy of 10.25 eV determined for CH2Br2 agrees satisfactorily with predictions of 10.26 and 10.25 eV with G2 and G3 methods, respectively. Observed major fragment ions CH2Br+, CHBr+, and CBr+ show appearance energies at 11.22, 12.59, and 15.42 eV, respectively; minor fragment ions CHBr2+, Br+, and CH2+ appear at 12.64, 15.31, and 16.80 eV, respectively. Energies for formation of observed fragment ions and their neutral counterparts upon ionization of CH2Br2 are computed with G2 and G3 methods. Dissociative photoionization channels associated with six observed fragment ions are proposed based on comparison of determined appearance energies and predicted energies. An upper limit of DeltaH0f,298(CHBr+) < or = 300.7 +/- 1.5 kcal mol(-1) is derived experimentally; the adiabatic ionization energy of CHBr is thus derived to be < or = 9.17 +/- 0.23 eV. Literature values for DeltaH0f,298(CBr+) = 362.5 kcal mol(-1) and ionization energy of 10.43 eV for CBr are revised to be less than 332 kcal mol(-1) and 9.11 eV, respectively. Also based on a new experimental ionization energy, DeltaH0f,298(CH2Br2+) is revised to be 236.4 +/- 1.5 kcal mol(-1).
