Frequency noise measurements using coherent self-heterodyne detection.

We demonstrate a refined way to extract the frequency noise (FN) spectrum of lasers by tailoring the delay in a conventional delayed self-heterodyne setup to sub-coherence lengths. The method achieves direct proportionality between electrical spectrum analyzer traces and the FN spectrum, which provide the intrinsic linewidth of the lasers. This proposed method is validated by comparing the FN spectrum with that obtained from a commercial frequency noise analyzer. The method provides a cost-effective alternative for FN measurements, which also requires minimal post-processing as compared to the state-of-the-art.

Ultralow-linewidth ring laser using hybrid integration and generic foundry platforms.

Two photonic integrated circuits (PICs) are coupled to form a hybridly integrated semiconductor ring laser in the telecom C band with an intrinsic linewidth of (158±21) Hz. This is, to the best of our knowledge, the first time an InP active-passive platform is used in conjunction with an integrated low-loss resonator to obtain a narrow-linewidth laser implemented using generic foundry platforms. The presented results pave the way for a hybrid integrated platform for microwave photonics (MWP), as the demonstrated device includes multiple active-passive components, and its narrow optical linewidth can potentially be translated to a narrow-linewidth microwave signal. Furthermore, as the laser is based on hybrid integration of two PICs from generic foundry platforms, there is a path to reproducible and low-cost devices.

A 10-kHz intrinsic linewidth coupled extended-cavity DBR laser monolithically integrated on an InP platform.

We report a monolithically integrated coupled extended-cavity distributed Bragg reflector laser with, to our knowledge, the lowest reported intrinsic linewidth of ∼10 kHz, which is extracted from a corresponding frequency-noise level of ∼3200 Hz2/Hz, realized on an InP generic foundry platform. Using the delayed self-heterodyne method, the experimentally measured linewidth was 45 kHz. The laser has an on-chip optical output power of 18 mW around 1550 nm at an injection current of 95 mA. The laser operates in a single-mode regime with a side-mode suppression ratio of 54 dB. Our monolithic approach paves the way toward further integration, such as integrated quantum key distribution transceivers.