Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes.

We report continuous-wave (CW) blue semipolar (202¯1) III-nitride laser diodes (LDs) that incorporate limited area epitaxy (LAE) n-AlGaN bottom cladding with thin p-GaN and ZnO top cladding layers. LAE mitigates LD design limitations that arise from stress relaxation, while ZnO layers reduce epitaxial growth time and temperature. Numerical modeling indicates that ZnO reduces the internal loss and increases the differential efficiency of TCO clad LDs. Room temperature CW lasing was achieved at 445 nm for a ridge waveguide LD with a threshold current density of 10.4 kA/cm2, a threshold voltage of 5.8 V, and a differential resistance of 1.1 Ω.

Development of high performance green c-plane III-nitride light-emitting diodes.

The effect of employing an AlGaN cap layer in the active region of green c-plane light-emitting diodes (LEDs) was studied. Each quantum well (QW) and barrier in the active region consisted of an InGaN QW and a thin Al0.30Ga0.70N cap layer grown at a relatively low temperature and a GaN barrier grown at a higher temperature. A series of experiments and simulations were carried out to explore the effects of varying the Al0.30Ga0.70N cap layer thickness and GaN barrier growth temperature on LED efficiency and electrical performance. We determined that the Al0.30Ga0.70N cap layer should be around 2 nm and the growth temperature of the GaN barrier should be approximately 75° C higher than the growth temperature of the InGaN QW to maximize the LED efficiency, minimize the forward voltage, and maintain good morphology. Optimized Al0.30Ga0.70N cap growth conditions within the active region resulted in high efficiency green LEDs with a peak external quantum efficiency (EQE) of 40.7% at 3 A/cm2. At a normal operating condition of 20 A/cm2, output power, EQE, forward voltage, and emission wavelength were 13.8 mW, 29.5%, 3.5 V, and 529.3 nm, respectively.

Semipolar III-nitride laser diodes with zinc oxide cladding.

Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors.

Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021¯)  substrate emitting at 410 nm was used for the transmitter. The measured modulation bandwidth of the LD was 1 GHz, which was limited by the avalanche photodetector. The emission from the NUV LD and the RGB phosphor combination measured a color rendering index (CRI) of 79 and correlated color temperature (CCT) of 4050 K, indicating promise of this approach for creating high quality white lighting. Using this configuration, data was successfully transmitted at a rate of more than 1 Gbps. This NUV laser-based system is expected to have lower background noise from sunlight at the LD emission wavelength than a system that uses a blue LD due to the rapid fall off in intensity of the solar spectrum in the NUV spectral region.

Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells.

We report a device that monolithically integrates optically pumped (20-21) III-nitride quantum wells (QWs) with 560 nm emission on top of electrically injected QWs with 450 nm emission. The higher temperature growth of the blue light-emitting diode (LED) was performed first, which prevented thermal damage to the higher indium content InGaN of the optically pumped QWs. A tunnel junction (TJ) was incorporated between the optically pumped and electrically injected QWs; this TJ enabled current spreading in the buried LED. Metalorganic chemical vapor deposition enabled the growth of InGaN QWs with high radiative efficiency, while molecular beam epitaxy was leveraged to achieve activated buried p-type GaN and the TJ. This initial device exhibited dichromatic optically polarized emission with a polarization ratio of 0.28. Future improvements in spectral distribution should enable phosphor-free polarized white light emission.

Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates.

We demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical (PEC) undercut etch. This PEC liftoff method allows for substrate reuse and exposes the N-face of the LEDs for additional roughening. The LEDs emitted at a wavelength of 432 nm with a turn on voltage of ~3 V. Etching the LEDs in heated KOH after transferring them to a sapphire submount increased the peak external quantum efficiency (EQE) by 42.5% from 9.9% (unintentionally roughened) to 14.1% (intentionally roughened).

High luminous efficacy green light-emitting diodes with AlGaN cap layer.

We demonstrate very high luminous efficacy green light-emitting diodes employing Al0.30Ga0.70N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm2) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.

High luminous flux from single crystal phosphor-converted laser-based white lighting system.

The efficiency droop of light emitting diodes (LEDs) with increasing current density limits the amount of light emitted per wafer area. Since low current densities are required for high efficiency operation, many LED die are needed for high power white light illumination systems. In contrast, the carrier density of laser diodes (LDs) clamps at threshold, so the efficiency of LDs does not droop above threshold and high efficiencies can be achieved at very high current densities. The use of a high power blue GaN-based LD coupled with a single crystal Ce-doped yttrium aluminum garnet (YAG:Ce) sample was investigated for white light illumination applications. Under CW operation, a single phosphor-converted LD (pc-LD) die produced a peak luminous efficacy of 86.7 lm/W at 1.4 A and 4.24 V and a peak luminous flux of 1100 lm at 3.0 A and 4.85 V with a luminous efficacy of 75.6 lm/W. Simulations of a pc-LD confirm that the single crystal YAG:Ce sample did not experience thermal quenching at peak LD operating efficiency. These results show that a single pc-LD die is capable of emitting enough luminous flux for use in a high power white light illumination system.

2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system.

We demonstrate data transmission of unfiltered white light generated by direct modulation of a blue gallium nitride (GaN) laser diode (LD) exciting YAG:Ce phosphors. 1.1 GHz of modulation bandwidth was measured without a limitation from the slow 3.8 MHz phosphor response. A high data transmission rate of 2 Gbit/s was achieved without an optical blue-filter using a non-return-to-zero on-off keying (NRZ-OOK) modulation scheme. The measured bit error rate (BER) of 3.50 × 10(-3) was less than the forward error correction (FEC) limit of 3.8 × 10(-3). The generated white light exhibits CIE 1931 chromaticity coordinates of (0.3628, 0.4310) with a color rendering index (CRI) of 58 and a correlated color temperature (CCT) of 4740 K when the LD was operated at 300 mA. The demonstrated laser-based lighting system can be used simultaneously for indoor broadband access and illumination applications with good color stability.

4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication.

We demonstrate high-speed data transmission with a commercial high power GaN laser diode at 450 nm. 2.6 GHz bandwidth was achieved at an injection current of 500 mA using a high-speed visible light communication setup. Record high 4 Gbps free-space data transmission rate was achieved at room temperature.

Surface structured optical coatings with near-perfect broadband and wide-angle antireflective properties.

Optical thin-film coatings are typically limited to designs where the refractive index varies in only a single dimension. However, additional control over the propagation of incoming light is possible by structuring the other two dimensions. In this work, we demonstrate a three-dimensional surface structured optical coating that combines the principles of thin-film optical design with bio-inspired nanostructures to yield near-perfect antireflection. Using this hybrid approach, we attain average reflection losses of 0.2% on sapphire and 0.6% on gallium nitride for 300-1800 nm light. This performance is maintained to very wide incidence angles, achieving less than 1% reflection at all measured wavelengths out to 45° for sapphire. This hybrid design has the potential to significantly enhance the broadband and wide-angle properties for a number of optical systems that require high transparency.

How can computerized interpretation algorithms adapt to gender/age differences in ECG measurements?

It is well known that there are gender differences in 12 lead ECG measurements, some of which can be statistically significant. It is also an accepted practice that we should consider those differences when we interpret ECGs, by either a human overreader or a computerized algorithm. There are some major gender differences in 12 lead ECG measurements based on automatic algorithms, including global measurements such as heart rate, QRS duration, QT interval, and lead-by-lead measurements like QRS amplitude, ST level, etc. The interpretation criteria used in the automatic algorithms can be adapted to the gender differences in the measurements. The analysis of a group of 1339 patients with acute inferior MI showed that for patients under age 60, women had lower ST elevations at the J point in lead II than men (57±91µV vs. 86±117µV, p<0.02). This trend was reversed for patients over age 60 (lead aVF: 102±126µV vs. 84±117µV, p<0.04; lead III: 130±146µV vs. 103±131µV, p<0.007). Therefore, the ST elevation thresholds were set based on available gender and age information, which resulted in 25% relative sensitivity improvement for women under age 60, while maintaining a high specificity of 98%. Similar analyses were done for prolonged QT interval and LVH cases. The paper uses several design examples to demonstrate (1) how to design a gender-specific algorithm, and (2) how to design a robust ECG interpretation algorithm which relies less on absolute threshold-based criteria and is instead more reliant on overall morphology features, which are especially important when gender information is unavailable for automatic analysis.

Effects of limb electrode placement on the 12- and 16-lead electrocardiogram.

The effects of three common limb electrode placement configurations on ECG signal morphology were examined, including the standard electrode placement of the electrodes on the extremities, the Mason-Likar placement, and the Lund placement. A non-traditional asymmetric configuration of placing the LA electrode on the upper arm with the RA electrode on the torso (below the clavicle) was also investigated. A series of 16-lead ECGs were acquired from 150 subjects representing a broad range of diseases. Effects of the limb electrode placement on axis measurements, QRS amplitudes, ST levels, and infarctions were studied. On average, the P, QRS, and T axes all exhibited rightward shifts as the electrodes were moved away from the extremities, but more generally, the axis became more vertical, with the largest shifts occurring when the standard ECG axis measurement was close to 0 degrees and tending to exhibit leftward shifts for ECGs with a standard axis measurement between 0 and -90 degrees. Voltage changes were consistent with axis shifts in the frontal plane (decreased lateral and increased inferior lead voltages), with the largest mean change a reduction in R wave amplitude of lead I going from the standard to the Mason-Likar configuration. In the precordial leads, Q and/or S magnitudes decreased in right-sided leads (V4r, V1, V2, V3) and R magnitudes increased in lateral leads (V3-V9) as the arm electrodes moved toward the trunk, suggesting a posterior shift in the mean QRS axis. ST deviations in the lateral and posterior precordial leads tended to be mimicked in lead III when the electrodes were moved from the extremities to the torso. Over half (13 of 25) of the ECGs exhibiting criteria for inferior infarct in the standard configuration had that criteria erased when the electrodes were moved to the Mason-Likar positions. The largest single effect on the ECG resulted from moving the LA electrode from the shoulder to the clavicle. The asymmetric configuration with the RA electrode on the torso and the LA electrode on the upper arm may offer some compromise between noise and faithfulness to the standard configuration in noisy environments such as exercise testing or monitoring.

The effects of noise on computerized electrocardiogram measurements.

UNLABELLED: Computerized measurements provide objective and reproducible assessments of the electrocardiogram (ECG). These measurements may be affected by noise or other lead quality issues. The effects of noise on the repeatability of computer-measured PR interval, QRS duration, QT interval, P/QRS/T axes, and ST levels were examined. METHODS: The 125 ECGs of the Common Standards for Quantitative Electrocardiography (CSE) measurement database (MO1 series) were merged with records from the MIT Noise Stress Test database. For each CSE ECG, 720 unique noise ECGs were created, for a total of 90,000 noisy ECGs. Computerized measurements from the noisy ECGs were compared to the original ECG measurements. The repeatability of the measurements was assessed as a function of a lead quality score. RESULTS: The repeatability of the measurements was found to be in excellent agreement with the original ECG measurements when the noise level was no worse than that of the original ECGs. Noise did not introduce any bias to the measurements, although not surprisingly, the variation of the errors increased as the lead quality degraded.